MX151412A - Un rectificador reforzado a compuerta mejorado - Google Patents

Un rectificador reforzado a compuerta mejorado

Info

Publication number
MX151412A
MX151412A MX190377A MX19037781A MX151412A MX 151412 A MX151412 A MX 151412A MX 190377 A MX190377 A MX 190377A MX 19037781 A MX19037781 A MX 19037781A MX 151412 A MX151412 A MX 151412A
Authority
MX
Mexico
Prior art keywords
rectifier
improved gate
gate reinforced
reinforced
improved
Prior art date
Application number
MX190377A
Other languages
English (en)
Spanish (es)
Inventor
Bantval Jayant Baliga
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of MX151412A publication Critical patent/MX151412A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
MX190377A 1980-12-02 1981-12-02 Un rectificador reforzado a compuerta mejorado MX151412A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21218180A 1980-12-02 1980-12-02

Publications (1)

Publication Number Publication Date
MX151412A true MX151412A (es) 1984-11-14

Family

ID=22789906

Family Applications (1)

Application Number Title Priority Date Filing Date
MX190377A MX151412A (es) 1980-12-02 1981-12-02 Un rectificador reforzado a compuerta mejorado

Country Status (8)

Country Link
JP (1) JPS57120369A (ja)
CH (1) CH657230A5 (ja)
DE (1) DE3147075A1 (ja)
FR (1) FR2495382B1 (ja)
GB (1) GB2088631B (ja)
IE (1) IE52758B1 (ja)
MX (1) MX151412A (ja)
SE (1) SE8107136L (ja)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212173A (ja) * 1982-04-01 1983-12-09 株式会社東芝 制御装置を備えたバイポ−ラ・トランジスタ装置
DE3380136D1 (en) * 1982-04-12 1989-08-03 Gen Electric Semiconductor device having a diffused region of reduced length and method of fabricating the same
JPS594077A (ja) * 1982-06-30 1984-01-10 Toshiba Corp 電界効果トランジスタ
JPS5927569A (ja) * 1982-08-06 1984-02-14 Hitachi Ltd 半導体スイツチ素子
EP0273030A3 (en) * 1982-12-13 1988-09-21 General Electric Company Lateral insulated-gate rectifier structures
CA1200322A (en) * 1982-12-13 1986-02-04 General Electric Company Bidirectional insulated-gate rectifier structures and method of operation
EP0118007B1 (en) * 1983-02-04 1990-05-23 General Electric Company Electrical circuit comprising a hybrid power switching semiconductor device including an scr structure
JPS59211271A (ja) * 1983-05-17 1984-11-30 Toshiba Corp 半導体装置
JPS605568A (ja) * 1983-06-23 1985-01-12 Sanken Electric Co Ltd 縦型絶縁ゲ−ト電界効果トランジスタ
EP0144654A3 (en) * 1983-11-03 1987-10-07 General Electric Company Semiconductor device structure including a dielectrically-isolated insulated-gate transistor
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
JPS60174258U (ja) * 1983-12-22 1985-11-19 株式会社明電舎 電界制御型半導体素子
JPH0810763B2 (ja) * 1983-12-28 1996-01-31 株式会社日立製作所 半導体装置
JPH0618255B2 (ja) * 1984-04-04 1994-03-09 株式会社東芝 半導体装置
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPS61185971A (ja) * 1985-02-14 1986-08-19 Toshiba Corp 伝導度変調型半導体装置
JPS61191071A (ja) * 1985-02-20 1986-08-25 Toshiba Corp 伝導度変調型半導体装置及びその製造方法
DE3677627D1 (de) * 1985-04-24 1991-04-04 Gen Electric Halbleiteranordnung mit isoliertem gate.
DE3628857A1 (de) * 1985-08-27 1987-03-12 Mitsubishi Electric Corp Halbleitereinrichtung
JPS6248073A (ja) * 1985-08-27 1987-03-02 Mitsubishi Electric Corp 半導体装置
JPH0715998B2 (ja) * 1985-08-27 1995-02-22 三菱電機株式会社 半導体装置
US4809045A (en) * 1985-09-30 1989-02-28 General Electric Company Insulated gate device
JPS62126668A (ja) * 1985-11-27 1987-06-08 Mitsubishi Electric Corp 半導体装置
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JPH0624244B2 (ja) * 1987-06-12 1994-03-30 株式会社日立製作所 複合半導体装置
JP2576173B2 (ja) * 1988-02-02 1997-01-29 日本電装株式会社 絶縁ゲート型半導体装置
DE58909474D1 (de) * 1988-02-24 1995-11-30 Siemens Ag Verfahren zur Herstellung eines durch Feldeffekt steuerbaren Bipolartransistors.
JPH07120799B2 (ja) * 1988-04-01 1995-12-20 株式会社日立製作所 半導体装置
JPH0247874A (ja) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Ｍｏｓ型半導体装置の製造方法
EP0409010A1 (de) * 1989-07-19 1991-01-23 Asea Brown Boveri Ag Abschaltbares Leistungshalbleiterbauelement
JP2752184B2 (ja) * 1989-09-11 1998-05-18 株式会社東芝 電力用半導体装置
GB8921596D0 (en) * 1989-09-25 1989-11-08 Lucas Ind Plc Mos gated bipolar devices
DE3942490C2 (de) * 1989-12-22 1994-03-24 Daimler Benz Ag Feldeffekt-gesteuertes Halbleiterbauelement
JP2808882B2 (ja) * 1990-05-07 1998-10-08 富士電機株式会社 絶縁ゲート型バイポーラトランジスタ
AU650064B2 (en) * 1990-10-31 1994-06-09 Monodor S.A. Method for preparing a liquid product and device for implementing same
JPH0548111A (ja) * 1991-08-12 1993-02-26 Toshiba Corp 半導体装置およびその製造方法
JP2984478B2 (ja) * 1992-08-15 1999-11-29 株式会社東芝 伝導度変調型半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2040657C3 (de) * 1970-08-17 1975-10-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Elektronischer Schalter für Halbleiterkoppelpunkte in Fernmelde-, insbesondere Fernsprechvermittlungsanlagen
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region

Also Published As

Publication number Publication date
IE52758B1 (en) 1988-02-17
IE812693L (en) 1982-06-02
DE3147075A1 (de) 1982-07-01
FR2495382A1 (fr) 1982-06-04
GB2088631B (en) 1984-11-28
JPS57120369A (en) 1982-07-27
GB2088631A (en) 1982-06-09
CH657230A5 (de) 1986-08-15
SE8107136L (sv) 1982-06-03
FR2495382B1 (fr) 1988-04-29

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