JPS57118664A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57118664A
JPS57118664A JP56003764A JP376481A JPS57118664A JP S57118664 A JPS57118664 A JP S57118664A JP 56003764 A JP56003764 A JP 56003764A JP 376481 A JP376481 A JP 376481A JP S57118664 A JPS57118664 A JP S57118664A
Authority
JP
Japan
Prior art keywords
region
well
regions
constitute
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56003764A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6230704B2 (enrdf_load_stackoverflow
Inventor
Toshihisa Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP56003764A priority Critical patent/JPS57118664A/ja
Publication of JPS57118664A publication Critical patent/JPS57118664A/ja
Publication of JPS6230704B2 publication Critical patent/JPS6230704B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56003764A 1981-01-16 1981-01-16 Semiconductor device Granted JPS57118664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56003764A JPS57118664A (en) 1981-01-16 1981-01-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56003764A JPS57118664A (en) 1981-01-16 1981-01-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57118664A true JPS57118664A (en) 1982-07-23
JPS6230704B2 JPS6230704B2 (enrdf_load_stackoverflow) 1987-07-03

Family

ID=11566229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56003764A Granted JPS57118664A (en) 1981-01-16 1981-01-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57118664A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226165A (ja) * 1984-04-25 1985-11-11 Sanyo Electric Co Ltd 半導体注入集積論理回路装置
JPS60229362A (ja) * 1984-04-26 1985-11-14 Sanyo Electric Co Ltd 半導体注入集積論理回路装置
JPS60229361A (ja) * 1984-04-26 1985-11-14 Sanyo Electric Co Ltd 半導体注入集積論理回路装置
JPS6112057A (ja) * 1984-06-26 1986-01-20 Sanyo Electric Co Ltd 半導体装置
CN101667575A (zh) * 2009-10-09 2010-03-10 贵州大学 多沟道电流扩展型半导体恒电流二极管

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210087A (en) * 1975-07-15 1977-01-26 Nec Corp Structure of semiconductor integrated circuit
JPS5287990A (en) * 1976-01-19 1977-07-22 Toshiba Corp Semiconductor device
JPS52107784A (en) * 1976-03-08 1977-09-09 Toshiba Corp Semiconductor unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210087A (en) * 1975-07-15 1977-01-26 Nec Corp Structure of semiconductor integrated circuit
JPS5287990A (en) * 1976-01-19 1977-07-22 Toshiba Corp Semiconductor device
JPS52107784A (en) * 1976-03-08 1977-09-09 Toshiba Corp Semiconductor unit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226165A (ja) * 1984-04-25 1985-11-11 Sanyo Electric Co Ltd 半導体注入集積論理回路装置
JPS60229362A (ja) * 1984-04-26 1985-11-14 Sanyo Electric Co Ltd 半導体注入集積論理回路装置
JPS60229361A (ja) * 1984-04-26 1985-11-14 Sanyo Electric Co Ltd 半導体注入集積論理回路装置
JPS6112057A (ja) * 1984-06-26 1986-01-20 Sanyo Electric Co Ltd 半導体装置
CN101667575A (zh) * 2009-10-09 2010-03-10 贵州大学 多沟道电流扩展型半导体恒电流二极管

Also Published As

Publication number Publication date
JPS6230704B2 (enrdf_load_stackoverflow) 1987-07-03

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