JPS5685934A - Control signal generating circuit - Google Patents

Control signal generating circuit

Info

Publication number
JPS5685934A
JPS5685934A JP16315879A JP16315879A JPS5685934A JP S5685934 A JPS5685934 A JP S5685934A JP 16315879 A JP16315879 A JP 16315879A JP 16315879 A JP16315879 A JP 16315879A JP S5685934 A JPS5685934 A JP S5685934A
Authority
JP
Japan
Prior art keywords
resistance
potential
terminal
voltage
control signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16315879A
Other languages
English (en)
Inventor
Masabumi Tanimoto
Nobuaki Ieda
Masato Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP16315879A priority Critical patent/JPS5685934A/ja
Priority to GB8038112A priority patent/GB2067836B/en
Priority to NL8006634A priority patent/NL8006634A/nl
Priority to CA000366353A priority patent/CA1147818A/en
Priority to US06/213,846 priority patent/US4399372A/en
Priority to FR8026434A priority patent/FR2472270B1/fr
Priority to DE3047186A priority patent/DE3047186C2/de
Publication of JPS5685934A publication Critical patent/JPS5685934A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/26—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
    • H01C17/265—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing
    • H01C17/267—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing by passage of voltage pulses or electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H03K19/0136—Modifications for accelerating switching in bipolar transistor circuits by means of a pull-up or down element

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Logic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP16315879A 1979-12-14 1979-12-14 Control signal generating circuit Pending JPS5685934A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP16315879A JPS5685934A (en) 1979-12-14 1979-12-14 Control signal generating circuit
GB8038112A GB2067836B (en) 1979-12-14 1980-11-27 Control signal generating circuit and a semiconductor integrated circuit including such a circuit
NL8006634A NL8006634A (nl) 1979-12-14 1980-12-05 Geintegreerde halfgeleider keteninrichting met regelsignaalopwekketens.
CA000366353A CA1147818A (en) 1979-12-14 1980-12-08 Semiconductor integrated circuit device having control signal generating circuits
US06/213,846 US4399372A (en) 1979-12-14 1980-12-08 Integrated circuit having spare parts activated by a high-to-low adjustable resistance device
FR8026434A FR2472270B1 (fr) 1979-12-14 1980-12-12 Circuit integre semi-conducteur ayant des circuits generateurs de signaux de commande
DE3047186A DE3047186C2 (de) 1979-12-14 1980-12-15 Halbleiterplättchen mit redundanten Elementen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16315879A JPS5685934A (en) 1979-12-14 1979-12-14 Control signal generating circuit

Publications (1)

Publication Number Publication Date
JPS5685934A true JPS5685934A (en) 1981-07-13

Family

ID=15768326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16315879A Pending JPS5685934A (en) 1979-12-14 1979-12-14 Control signal generating circuit

Country Status (7)

Country Link
US (1) US4399372A (ja)
JP (1) JPS5685934A (ja)
CA (1) CA1147818A (ja)
DE (1) DE3047186C2 (ja)
FR (1) FR2472270B1 (ja)
GB (1) GB2067836B (ja)
NL (1) NL8006634A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137327A (ja) * 1982-02-10 1983-08-15 Toshiba Corp 半導体集積回路
JPS6461046A (en) * 1987-09-01 1989-03-08 Nec Corp Semiconductor device

Families Citing this family (68)

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US4532607A (en) * 1981-07-22 1985-07-30 Tokyo Shibaura Denki Kabushiki Kaisha Programmable circuit including a latch to store a fuse's state
US4533841A (en) * 1981-09-03 1985-08-06 Tokyo Shibaura Denki Kabushiki Kaisha MOS logic circuit responsive to an irreversible control voltage for permanently varying its signal transfer characteristic
JPS58164099A (ja) * 1982-03-25 1983-09-28 Toshiba Corp 半導体メモリ−
DE3382251D1 (de) * 1982-03-25 1991-05-23 Toshiba Kawasaki Kk Halbleiterspeicheranordnung.
DE3213726C1 (de) * 1982-04-14 1989-01-12 Siemens AG, 1000 Berlin und 8000 München Anordnung zum zeitweisen Abschalten eines Schaltungsblockes in einem integrierten Schaltkreis
US4573146A (en) * 1982-04-20 1986-02-25 Mostek Corporation Testing and evaluation of a semiconductor memory containing redundant memory elements
DE3215177A1 (de) * 1982-04-23 1983-10-27 Hartmann & Braun Ag, 6000 Frankfurt Ueberwachungssystem fuer eine oder mehrere, gleichartig aufgebaute prozessstationen
JPS58208998A (ja) * 1982-05-28 1983-12-05 Toshiba Corp 半導体ｃｍｏｓメモリ
JPS59105354A (ja) * 1982-12-09 1984-06-18 Toshiba Corp 半導体装置
JPS59142800A (ja) * 1983-02-04 1984-08-16 Fujitsu Ltd 半導体集積回路装置
US4609830A (en) * 1983-11-28 1986-09-02 Zoran Corporation Programmable logic gate
JPS60101196U (ja) * 1983-12-13 1985-07-10 篠原　友義 筆記具
JPS60195797A (ja) * 1984-03-16 1985-10-04 Mitsubishi Electric Corp 半導体記憶装置の冗長回路
US4590388A (en) * 1984-04-23 1986-05-20 At&T Bell Laboratories CMOS spare decoder circuit
US4646427A (en) * 1984-06-28 1987-03-03 Motorola, Inc. Method of electrically adjusting the zener knee of a lateral polysilicon zener diode
US4796233A (en) * 1984-10-19 1989-01-03 Fujitsu Limited Bipolar-transistor type semiconductor memory device having redundancy configuration
US4744060A (en) * 1984-10-19 1988-05-10 Fujitsu Limited Bipolar-transistor type random access memory having redundancy configuration
US4716323A (en) * 1985-04-27 1987-12-29 Kabushiki Kaisha Toshiba Power voltage drop detecting circuit
JPS6295016A (ja) * 1985-10-21 1987-05-01 Mitsubishi Electric Corp ラツチ回路
JPS634492A (ja) * 1986-06-23 1988-01-09 Mitsubishi Electric Corp 半導体記憶装置
US4689494A (en) * 1986-09-18 1987-08-25 Advanced Micro Devices, Inc. Redundancy enable/disable circuit
US5365165A (en) * 1986-09-19 1994-11-15 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US5341092A (en) * 1986-09-19 1994-08-23 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US4758745B1 (en) * 1986-09-19 1994-11-15 Actel Corp User programmable integrated circuit interconnect architecture and test method
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
KR910003594B1 (ko) * 1988-05-13 1991-06-07 삼성전자 주식회사 스페어컬럼(column)선택방법 및 회로
JPH0817039B2 (ja) * 1988-08-19 1996-02-21 株式会社東芝 半導体メモリセル
US5179536A (en) * 1989-01-31 1993-01-12 Fujitsu Limited Semiconductor memory device having means for replacing defective memory cells
US5059837A (en) * 1989-02-13 1991-10-22 Ibm Data dependent variable time delay circuit
US5182468A (en) * 1989-02-13 1993-01-26 Ibm Corporation Current limiting clamp circuit
EP0404995B1 (de) * 1989-06-30 1994-08-31 Siemens Aktiengesellschaft Integrierte Schaltungsanordnung
US5056061A (en) * 1989-12-20 1991-10-08 N. A. Philips Corporation Circuit for encoding identification information on circuit dice using fet capacitors
US5780323A (en) * 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
US5614756A (en) * 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
JP2723338B2 (ja) * 1990-04-21 1998-03-09 株式会社東芝 半導体メモリ装置
US5237217A (en) * 1990-11-14 1993-08-17 Matsushita Electric Industrial Co., Ltd. Decoder circuit with a differential amplifier and applications thereof
US5166556A (en) * 1991-01-22 1992-11-24 Myson Technology, Inc. Programmable antifuse structure, process, logic cell and architecture for programmable integrated circuits
US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
US5334880A (en) * 1991-04-30 1994-08-02 International Business Machines Corporation Low voltage programmable storage element
DE4207225C2 (de) * 1992-03-07 1994-06-16 Bosch Gmbh Robert Integrierte Schaltung mit Abgleichbauteilen
DE4207226B4 (de) * 1992-03-07 2005-12-15 Robert Bosch Gmbh Integrierte Schaltung
US5294846A (en) * 1992-08-17 1994-03-15 Paivinen John O Method and apparatus for programming anti-fuse devices
US5485031A (en) * 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
US5917229A (en) * 1994-02-08 1999-06-29 Prolinx Labs Corporation Programmable/reprogrammable printed circuit board using fuse and/or antifuse as interconnect
US5834824A (en) * 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
US5572409A (en) * 1994-02-08 1996-11-05 Prolinx Labs Corporation Apparatus including a programmable socket adapter for coupling an electronic component to a component socket on a printed circuit board
US5808351A (en) * 1994-02-08 1998-09-15 Prolinx Labs Corporation Programmable/reprogramable structure using fuses and antifuses
US5726482A (en) * 1994-02-08 1998-03-10 Prolinx Labs Corporation Device-under-test card for a burn-in board
US5813881A (en) * 1994-02-08 1998-09-29 Prolinx Labs Corporation Programmable cable and cable adapter using fuses and antifuses
US5537108A (en) * 1994-02-08 1996-07-16 Prolinx Labs Corporation Method and structure for programming fuses
US5424655A (en) * 1994-05-20 1995-06-13 Quicklogic Corporation Programmable application specific integrated circuit employing antifuses and methods therefor
US5962815A (en) * 1995-01-18 1999-10-05 Prolinx Labs Corporation Antifuse interconnect between two conducting layers of a printed circuit board
US5906042A (en) * 1995-10-04 1999-05-25 Prolinx Labs Corporation Method and structure to interconnect traces of two conductive layers in a printed circuit board
US5767575A (en) * 1995-10-17 1998-06-16 Prolinx Labs Corporation Ball grid array structure and method for packaging an integrated circuit chip
US5872338A (en) * 1996-04-10 1999-02-16 Prolinx Labs Corporation Multilayer board having insulating isolation rings
US6034427A (en) * 1998-01-28 2000-03-07 Prolinx Labs Corporation Ball grid array structure and method for packaging an integrated circuit chip
US6724601B2 (en) * 2001-03-16 2004-04-20 Integrated Device Technology, Inc. ESD protection circuit
FR2836752A1 (fr) * 2002-02-11 2003-09-05 St Microelectronics Sa Cellule memoire a programmation unique
FR2836751A1 (fr) * 2002-02-11 2003-09-05 St Microelectronics Sa Cellule memoire a programmation unique non destructrice
FR2846463A1 (fr) * 2002-10-28 2004-04-30 St Microelectronics Sa Compteur monotone a base de cellules memoire
FR2846461A1 (fr) * 2002-10-28 2004-04-30 St Microelectronics Sa Compteur par tranches
FR2846462A1 (fr) * 2002-10-28 2004-04-30 St Microelectronics Sa Compteur monotone croissant en circuit integre
FR2846791A1 (fr) * 2002-10-31 2004-05-07 St Microelectronics Sa Element resistif en silicium polycristallin commandable en diminution irreversible de sa valeur
EP1416497A3 (fr) * 2002-10-31 2004-07-21 STMicroelectronics S.A. Cellules mémoire multi-niveaux à programmation unique
US20080308886A1 (en) * 2007-06-15 2008-12-18 Infineon Technologies Ag Semiconductor Sensor
EP2587604A1 (en) * 2011-10-25 2013-05-01 Tyco Electronics UK Limited A fault protection device
US11038426B2 (en) 2019-09-19 2021-06-15 National Instruments Corporation Multi-phase noise cancelled adjustable switched mode programmable load
US11050402B2 (en) 2019-09-19 2021-06-29 National Instruments Corporation Electronically adjustable inductor circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4871546A (ja) * 1971-12-27 1973-09-27

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BE794202A (fr) * 1972-01-19 1973-05-16 Intel Corp Liaison fusible pour circuit integre sur substrat semi-conducteur pour memoires
DE2408540C2 (de) * 1974-02-22 1982-04-08 Robert Bosch Gmbh, 7000 Stuttgart Halbleiterbauelement aus einer Vielzahl mindestens annähernd gleicher Schaltungselemente und Verfahren zum Erkennen und Abtrennen defekter Schaltungselemente
US4024509A (en) * 1975-06-30 1977-05-17 Honeywell Information Systems, Inc. CCD register array addressing system including apparatus for by-passing selected arrays
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JPS53136980A (en) * 1977-05-04 1978-11-29 Nippon Telegr & Teleph Corp <Ntt> Resistance value correction method for poly crystal silicon resistor
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Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4871546A (ja) * 1971-12-27 1973-09-27

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137327A (ja) * 1982-02-10 1983-08-15 Toshiba Corp 半導体集積回路
JPH0450770B2 (ja) * 1982-02-10 1992-08-17 Tokyo Shibaura Electric Co
JPS6461046A (en) * 1987-09-01 1989-03-08 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
FR2472270A1 (fr) 1981-06-26
DE3047186C2 (de) 1984-03-08
NL8006634A (nl) 1981-07-16
CA1147818A (en) 1983-06-07
FR2472270B1 (fr) 1985-10-18
GB2067836A (en) 1981-07-30
DE3047186A1 (de) 1981-09-10
US4399372A (en) 1983-08-16
GB2067836B (en) 1983-09-14

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