JPS6433797A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6433797A
JPS6433797A JP18943587A JP18943587A JPS6433797A JP S6433797 A JPS6433797 A JP S6433797A JP 18943587 A JP18943587 A JP 18943587A JP 18943587 A JP18943587 A JP 18943587A JP S6433797 A JPS6433797 A JP S6433797A
Authority
JP
Japan
Prior art keywords
node
voltage
time
goes
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18943587A
Other languages
Japanese (ja)
Other versions
JPH0782756B2 (en
Inventor
Mizuho Imai
Hiroshi Iwahashi
Masamichi Asano
Eishin Minagawa
Yuichi Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP18943587A priority Critical patent/JPH0782756B2/en
Priority to US07/226,312 priority patent/US4916334A/en
Priority to KR1019880009577A priority patent/KR910007403B1/en
Publication of JPS6433797A publication Critical patent/JPS6433797A/en
Publication of JPH0782756B2 publication Critical patent/JPH0782756B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To prevent the generation of a latch-up and the enlargement of a chip by setting a boosting circuit in a device and controlling the output of a high voltage from an outside with the boosted voltage. CONSTITUTION:When a column selecting signal IN is '1' at the time of programming, a MOSTR 11 in an inverter 13 is nonconducted, a TR 12 is conducted, and an output node 15 goes to 0V. Consequently, a column selected line COLi is set to 0V through a TR 16. In such a time, current flows from a node 25 of the high voltage VP through TRs 26, 27, 22, 23 and the TR 16, and when the voltage of a node 20 is the absolute value of a threshold or more, a TR 21 is nonconducted. On the other hand, when data are read out from a memory cell, the high voltage VP of boosting circuits VH1 and VH2 and the node 25 is set to 0V, and a control signal R/W is set to '1'. In such a time, when the signal IN is '0', the TR 11 is conducted, the output of the node 15 goes to VC, and the line COLi also goes to VP through the TR 16. In such a time, the TR 22 is in a nonconductive condition, and the voltage of the line COLi is not discharged to the voltage VS.
JP18943587A 1987-07-29 1987-07-29 Semiconductor integrated circuit Expired - Lifetime JPH0782756B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP18943587A JPH0782756B2 (en) 1987-07-29 1987-07-29 Semiconductor integrated circuit
US07/226,312 US4916334A (en) 1987-07-29 1988-07-29 High voltage booster circuit for use in EEPROMs
KR1019880009577A KR910007403B1 (en) 1987-07-29 1988-07-29 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18943587A JPH0782756B2 (en) 1987-07-29 1987-07-29 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS6433797A true JPS6433797A (en) 1989-02-03
JPH0782756B2 JPH0782756B2 (en) 1995-09-06

Family

ID=16241199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18943587A Expired - Lifetime JPH0782756B2 (en) 1987-07-29 1987-07-29 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH0782756B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100336224C (en) * 1994-07-25 2007-09-05 精工电子工业株式会社 Semiconductor integrated circuit device and electronic device using them

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100336224C (en) * 1994-07-25 2007-09-05 精工电子工业株式会社 Semiconductor integrated circuit device and electronic device using them

Also Published As

Publication number Publication date
JPH0782756B2 (en) 1995-09-06

Similar Documents

Publication Publication Date Title
US5534804A (en) CMOS power-on reset circuit using hysteresis
US5347170A (en) Semiconductor integrated circuit having a voltage stepdown mechanism
KR900004196B1 (en) Voltage level sensing power-up reset circuit
US4874967A (en) Low power voltage clamp circuit
JPH05120873A (en) Dynamic ram
JPS5786190A (en) Semiconductor device
EP0376245A3 (en) Semiconductors memory device provided with an improved redundant decoder
JPS5625288A (en) Bit line control circuit
US5278798A (en) Semiconductor memory device
EP0331113A3 (en) Semiconductor memory device
KR900007999B1 (en) Semiconductor memory device
KR880008336A (en) Semiconductor integrated circuit device
KR900005149B1 (en) Integrated circuit device
US5786719A (en) Mode setting circuit and mode setting apparatus used to select a particular semiconductor function
KR900003834B1 (en) Semiconductor integrated circuit
US6201433B1 (en) Semiconductor memory device having constant voltage circuit
EP0377840A3 (en) Nonvolatile semiconductor memory device having reference potential generating circuit
US4513212A (en) Automatic P-well clamping for CMOS integrated circuit
JPS6433797A (en) Semiconductor integrated circuit
KR900003901A (en) Programmable Semiconductor Memory Circuits
GB2300283A (en) Source voltage generating circuit
JPS5622117A (en) Electric power supply system for cmos memory circuit
JPS6410499A (en) Semiconductor storage device
JPS6466896A (en) Semiconductor memory
JPS6452298A (en) Semiconductor memory device

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term