JPS6452298A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS6452298A
JPS6452298A JP20858887A JP20858887A JPS6452298A JP S6452298 A JPS6452298 A JP S6452298A JP 20858887 A JP20858887 A JP 20858887A JP 20858887 A JP20858887 A JP 20858887A JP S6452298 A JPS6452298 A JP S6452298A
Authority
JP
Japan
Prior art keywords
voltage
high voltage
test
measurement
control signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20858887A
Other languages
Japanese (ja)
Inventor
Takeshi Nakayama
Masanori Hayashigoe
Kazuo Kobayashi
Yasushi Terada
Yoshikazu Miyawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20858887A priority Critical patent/JPS6452298A/en
Publication of JPS6452298A publication Critical patent/JPS6452298A/en
Pending legal-status Critical Current

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  • Read Only Memory (AREA)

Abstract

PURPOSE:To facilitate the measurement of a threshold voltage in an erasing condition by impressing a voltage higher than a supply voltage selectively applied to an external input terminal directly to the control gate of a memory transistor in response to the control signal of the supply voltage level. CONSTITUTION:At the time of a test mode, transistors TR Q10 and T1 are turned on by a testing control signal T, a current flow from a high voltage generating circuit 5 to a high voltage switch 4, and a MOS capacitor C1 is changed. In this condition, a circuit 4 raise the potential of a node N2 at every rise and fall of a control clock phi, and the voltage rises near a high voltage VPP. On the other hand, a test voltage applied from an external terminal 14 is given through a TR Q9 and an erasing high voltage pulse line EL to the gate of a TR Q7. Thus, the voltage necessary for the test is applied to a control gate line CGL, and the measurement of the threshold voltage is facilitated.
JP20858887A 1987-08-21 1987-08-21 Semiconductor memory device Pending JPS6452298A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20858887A JPS6452298A (en) 1987-08-21 1987-08-21 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20858887A JPS6452298A (en) 1987-08-21 1987-08-21 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS6452298A true JPS6452298A (en) 1989-02-28

Family

ID=16558676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20858887A Pending JPS6452298A (en) 1987-08-21 1987-08-21 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6452298A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294883A (en) * 1992-08-04 1994-03-15 International Business Machines Corporation Test detector/shutoff and method for BiCMOS integrated circuit
US5375083A (en) * 1993-02-04 1994-12-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit including a substrate having a memory cell array surrounded by a well structure
US5535160A (en) * 1993-07-05 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit
US6949947B2 (en) 2003-11-13 2005-09-27 Hynix Semiconductor Inc. Test mode circuit of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294883A (en) * 1992-08-04 1994-03-15 International Business Machines Corporation Test detector/shutoff and method for BiCMOS integrated circuit
US5375083A (en) * 1993-02-04 1994-12-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit including a substrate having a memory cell array surrounded by a well structure
US5535160A (en) * 1993-07-05 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit
US6949947B2 (en) 2003-11-13 2005-09-27 Hynix Semiconductor Inc. Test mode circuit of semiconductor device

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