JPS5660063A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5660063A
JPS5660063A JP13666179A JP13666179A JPS5660063A JP S5660063 A JPS5660063 A JP S5660063A JP 13666179 A JP13666179 A JP 13666179A JP 13666179 A JP13666179 A JP 13666179A JP S5660063 A JPS5660063 A JP S5660063A
Authority
JP
Japan
Prior art keywords
type
substrate
polycrystalline silicon
source
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13666179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6362108B2 (en, 2012
Inventor
Yasuyuki Saito
Osamu Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13666179A priority Critical patent/JPS5660063A/ja
Publication of JPS5660063A publication Critical patent/JPS5660063A/ja
Publication of JPS6362108B2 publication Critical patent/JPS6362108B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP13666179A 1979-10-23 1979-10-23 Manufacture of semiconductor device Granted JPS5660063A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13666179A JPS5660063A (en) 1979-10-23 1979-10-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13666179A JPS5660063A (en) 1979-10-23 1979-10-23 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5660063A true JPS5660063A (en) 1981-05-23
JPS6362108B2 JPS6362108B2 (en, 2012) 1988-12-01

Family

ID=15180536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13666179A Granted JPS5660063A (en) 1979-10-23 1979-10-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5660063A (en, 2012)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115554A (ja) * 1982-12-22 1984-07-04 Toshiba Corp 半導体装置の製造方法
JPS59148369A (ja) * 1983-02-10 1984-08-25 シ−メンス，アクチエンゲゼルシヤフト Ｍｏｓトランジスタの製造方法
JPS59208772A (ja) * 1983-05-12 1984-11-27 Nec Corp 半導体装置の製造方法
JPS59208773A (ja) * 1983-05-12 1984-11-27 Nec Corp 半導体装置の製造方法
JPS6165470A (ja) * 1984-09-07 1986-04-04 Hitachi Ltd 半導体集積回路装置
JPS61139058A (ja) * 1984-12-11 1986-06-26 Seiko Epson Corp 半導体製造装置
JPS6472543A (en) * 1987-09-12 1989-03-17 Sony Corp Manufacture of semiconductor device
JPH0226021A (ja) * 1988-07-14 1990-01-29 Matsushita Electron Corp 多層配線の形成方法
JPH088224B2 (ja) * 1985-06-12 1996-01-29 ヒュンダイ エレクトロニクス アメリカ 集積回路のコンタクト及び内部接続線の形成方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115554A (ja) * 1982-12-22 1984-07-04 Toshiba Corp 半導体装置の製造方法
JPS59148369A (ja) * 1983-02-10 1984-08-25 シ−メンス，アクチエンゲゼルシヤフト Ｍｏｓトランジスタの製造方法
JPS59208772A (ja) * 1983-05-12 1984-11-27 Nec Corp 半導体装置の製造方法
JPS59208773A (ja) * 1983-05-12 1984-11-27 Nec Corp 半導体装置の製造方法
JPS6165470A (ja) * 1984-09-07 1986-04-04 Hitachi Ltd 半導体集積回路装置
JPS61139058A (ja) * 1984-12-11 1986-06-26 Seiko Epson Corp 半導体製造装置
JPH088224B2 (ja) * 1985-06-12 1996-01-29 ヒュンダイ エレクトロニクス アメリカ 集積回路のコンタクト及び内部接続線の形成方法
JPS6472543A (en) * 1987-09-12 1989-03-17 Sony Corp Manufacture of semiconductor device
JPH0226021A (ja) * 1988-07-14 1990-01-29 Matsushita Electron Corp 多層配線の形成方法

Also Published As

Publication number Publication date
JPS6362108B2 (en, 2012) 1988-12-01

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