FR2313769A1 - Procede de fabrication de transistors a effet de champ - Google Patents

Procede de fabrication de transistors a effet de champ

Info

Publication number
FR2313769A1
FR2313769A1 FR7616449A FR7616449A FR2313769A1 FR 2313769 A1 FR2313769 A1 FR 2313769A1 FR 7616449 A FR7616449 A FR 7616449A FR 7616449 A FR7616449 A FR 7616449A FR 2313769 A1 FR2313769 A1 FR 2313769A1
Authority
FR
France
Prior art keywords
doped
small number
substrate
layer
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7616449A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
National Cash Register Co
Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp, National Cash Register Co filed Critical NCR Corp
Publication of FR2313769A1 publication Critical patent/FR2313769A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR7616449A 1975-06-02 1976-06-01 Procede de fabrication de transistors a effet de champ Withdrawn FR2313769A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57933275A 1975-06-02 1975-06-02

Publications (1)

Publication Number Publication Date
FR2313769A1 true FR2313769A1 (fr) 1976-12-31

Family

ID=24316471

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7616449A Withdrawn FR2313769A1 (fr) 1975-06-02 1976-06-01 Procede de fabrication de transistors a effet de champ

Country Status (4)

Country Link
JP (1) JPS51147976A (fr)
DE (1) DE2624513A1 (fr)
FR (1) FR2313769A1 (fr)
NL (1) NL7605966A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2428326A1 (fr) * 1978-06-06 1980-01-04 Rockwell International Corp Procede de formation de circuits integres a tres grande echelle a grilles et contacts alignes automatiquement et circuits formes

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5348898A (en) * 1979-05-25 1994-09-20 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
JPS55156370A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2428326A1 (fr) * 1978-06-06 1980-01-04 Rockwell International Corp Procede de formation de circuits integres a tres grande echelle a grilles et contacts alignes automatiquement et circuits formes

Also Published As

Publication number Publication date
DE2624513A1 (de) 1976-12-09
NL7605966A (nl) 1976-12-06
JPS51147976A (en) 1976-12-18

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Legal Events

Date Code Title Description
ST Notification of lapse