JPS6362108B2 - - Google Patents

Info

Publication number
JPS6362108B2
JPS6362108B2 JP54136661A JP13666179A JPS6362108B2 JP S6362108 B2 JPS6362108 B2 JP S6362108B2 JP 54136661 A JP54136661 A JP 54136661A JP 13666179 A JP13666179 A JP 13666179A JP S6362108 B2 JPS6362108 B2 JP S6362108B2
Authority
JP
Japan
Prior art keywords
type
polycrystalline silicon
source
silicon film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54136661A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5660063A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13666179A priority Critical patent/JPS5660063A/ja
Publication of JPS5660063A publication Critical patent/JPS5660063A/ja
Publication of JPS6362108B2 publication Critical patent/JPS6362108B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP13666179A 1979-10-23 1979-10-23 Manufacture of semiconductor device Granted JPS5660063A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13666179A JPS5660063A (en) 1979-10-23 1979-10-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13666179A JPS5660063A (en) 1979-10-23 1979-10-23 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5660063A JPS5660063A (en) 1981-05-23
JPS6362108B2 true JPS6362108B2 (en, 2012) 1988-12-01

Family

ID=15180536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13666179A Granted JPS5660063A (en) 1979-10-23 1979-10-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5660063A (en, 2012)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115554A (ja) * 1982-12-22 1984-07-04 Toshiba Corp 半導体装置の製造方法
DE3304588A1 (de) * 1983-02-10 1984-08-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von mos-transistoren mit flachen source/drain-gebieten, kurzen kanallaengen und einer selbstjustierten, aus einem metallsilizid bestehenden kontaktierungsebene
JPS59208772A (ja) * 1983-05-12 1984-11-27 Nec Corp 半導体装置の製造方法
JPS59208773A (ja) * 1983-05-12 1984-11-27 Nec Corp 半導体装置の製造方法
JPS6165470A (ja) * 1984-09-07 1986-04-04 Hitachi Ltd 半導体集積回路装置
JPS61139058A (ja) * 1984-12-11 1986-06-26 Seiko Epson Corp 半導体製造装置
US4648175A (en) * 1985-06-12 1987-03-10 Ncr Corporation Use of selectively deposited tungsten for contact formation and shunting metallization
JP2807226B2 (ja) * 1987-09-12 1998-10-08 ソニー株式会社 半導体装置の製造方法
JPH0226021A (ja) * 1988-07-14 1990-01-29 Matsushita Electron Corp 多層配線の形成方法

Also Published As

Publication number Publication date
JPS5660063A (en) 1981-05-23

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