JPS6472543A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6472543A
JPS6472543A JP62228794A JP22879487A JPS6472543A JP S6472543 A JPS6472543 A JP S6472543A JP 62228794 A JP62228794 A JP 62228794A JP 22879487 A JP22879487 A JP 22879487A JP S6472543 A JPS6472543 A JP S6472543A
Authority
JP
Japan
Prior art keywords
layer
conductive type
barrier layer
type mis
impurity diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62228794A
Other languages
Japanese (ja)
Other versions
JP2807226B2 (en
Inventor
Koji Otsu
Akihiko Ochiai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62228794A priority Critical patent/JP2807226B2/en
Publication of JPS6472543A publication Critical patent/JPS6472543A/en
Application granted granted Critical
Publication of JP2807226B2 publication Critical patent/JP2807226B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To allow reliable connections between a diffusion layer and a wiring layer even when they are miniaturized by means such as forming an impurity diffusion barrier layer having conductivity onto the diffusion layer of a first conductive type MIS transistor, and forming an electrode extracting layer of a second conductive type which is connected to such barrier layer. CONSTITUTION:First and second conductive type MIS transistors 11 and 12 are formed on a substrate, and an impurity diffusion barrier layer 20 having conductivity is formed on a diffusion layer 17 at least of said first conductive type MIS transistor 11. Then wiring layers 24 and 25 which electrically connect said first and second conductive type MIS transistors 11 and 12 are formed by interposing a second conductive electrode extracting layer 23 which connects at least to said impurity diffusion barrier layer 20 therebetween. For example, the impurity diffusion barrier layer 20 consisting of a titanium silicide layer and a titanium nitride layer is formed on each of gate electrodes 16 and 18, and diffusion layers 17 and 19 of the transistors 11 and 12, and then the electrode extracting layer is formed by a phosphorus-containing polycrystal silicon layer 23.
JP62228794A 1987-09-12 1987-09-12 Method for manufacturing semiconductor device Expired - Fee Related JP2807226B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62228794A JP2807226B2 (en) 1987-09-12 1987-09-12 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62228794A JP2807226B2 (en) 1987-09-12 1987-09-12 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6472543A true JPS6472543A (en) 1989-03-17
JP2807226B2 JP2807226B2 (en) 1998-10-08

Family

ID=16881957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62228794A Expired - Fee Related JP2807226B2 (en) 1987-09-12 1987-09-12 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2807226B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239955A (en) * 1988-03-22 1989-09-25 Seiko Epson Corp Semiconductor device
JPH0319331A (en) * 1989-05-27 1991-01-28 Goldstar Electron Co Ltd D ram element and method of improving degree of integration of d ram element
JPH04155823A (en) * 1990-10-18 1992-05-28 Matsushita Electron Corp Semiconductor device and manufacture thereof
JPH0669358A (en) * 1992-06-23 1994-03-11 Micron Technol Inc Working method of semiconductor
JPH06196552A (en) * 1992-10-02 1994-07-15 Internatl Business Mach Corp <Ibm> Trench sidewall structure and its formation
EP0929105A2 (en) * 1998-01-09 1999-07-14 Sharp Kabushiki Kaisha Metal gate sub-micron mos transistor and method of making same
US6882017B2 (en) 1998-08-21 2005-04-19 Micron Technology, Inc. Field effect transistors and integrated circuitry
USRE40790E1 (en) 1992-06-23 2009-06-23 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660063A (en) * 1979-10-23 1981-05-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS56144572A (en) * 1980-04-10 1981-11-10 Seiko Epson Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660063A (en) * 1979-10-23 1981-05-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS56144572A (en) * 1980-04-10 1981-11-10 Seiko Epson Corp Semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239955A (en) * 1988-03-22 1989-09-25 Seiko Epson Corp Semiconductor device
JPH0319331A (en) * 1989-05-27 1991-01-28 Goldstar Electron Co Ltd D ram element and method of improving degree of integration of d ram element
JPH04155823A (en) * 1990-10-18 1992-05-28 Matsushita Electron Corp Semiconductor device and manufacture thereof
JPH0669358A (en) * 1992-06-23 1994-03-11 Micron Technol Inc Working method of semiconductor
USRE40790E1 (en) 1992-06-23 2009-06-23 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
JPH06196552A (en) * 1992-10-02 1994-07-15 Internatl Business Mach Corp <Ibm> Trench sidewall structure and its formation
EP0929105A2 (en) * 1998-01-09 1999-07-14 Sharp Kabushiki Kaisha Metal gate sub-micron mos transistor and method of making same
EP0929105A3 (en) * 1998-01-09 1999-12-22 Sharp Kabushiki Kaisha Metal gate sub-micron mos transistor and method of making same
US6882017B2 (en) 1998-08-21 2005-04-19 Micron Technology, Inc. Field effect transistors and integrated circuitry
US6939799B2 (en) 1998-08-21 2005-09-06 Micron Technology, Inc. Method of forming a field effect transistor and methods of forming integrated circuitry

Also Published As

Publication number Publication date
JP2807226B2 (en) 1998-10-08

Similar Documents

Publication Publication Date Title
US4621276A (en) Buried contacts for N and P channel devices in an SOI-CMOS process using a single N+polycrystalline silicon layer
EP0820096A3 (en) Semiconductor device and method for fabricating the same
JPS58210656A (en) Laminated type cmos inverter device
JPS6472543A (en) Manufacture of semiconductor device
KR850005138A (en) Semiconductor device and manufacturing method thereof
US5288651A (en) Method of making semiconductor integrated circuit device including bipolar transistors, MOS FETs and CCD
KR860000612B1 (en) Semi conductor apparatus and manufacturing method
JPH02862B2 (en)
US5270566A (en) Insulated gate semiconductor device
WO1996030940A3 (en) METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH BiCMOS CIRCUIT
JPH0666412B2 (en) Stacked semiconductor integrated circuit
KR910007513B1 (en) Wiring connection of semiconductor device
US6104070A (en) Semiconductor device with reduced number of through holes and method of manufacturing the same
KR950010066A (en) Semiconductor device having thin film wiring and manufacturing method thereof
EP0427253A2 (en) Semiconductor integrated circuit device including bipolar transistors, MOS FETs and CCD
JP3049255B2 (en) Method for manufacturing CMIS semiconductor device
JPH03203266A (en) Semiconductor device
JPS63114160A (en) Integrated circuit for complementary type misfet
JP2993041B2 (en) Complementary MOS semiconductor device
JPS62287643A (en) Semiconductor device
JP2876742B2 (en) Semiconductor device
JPH02201932A (en) Mos field-effect transistor with high withstand voltage
JPH03132068A (en) Semiconductor device
JPS61292343A (en) Semiconductor device and manufacture thereof
JPH03283565A (en) Mos type semiconductor integrated circuit

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees