JPS5655055A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5655055A
JPS5655055A JP13233179A JP13233179A JPS5655055A JP S5655055 A JPS5655055 A JP S5655055A JP 13233179 A JP13233179 A JP 13233179A JP 13233179 A JP13233179 A JP 13233179A JP S5655055 A JPS5655055 A JP S5655055A
Authority
JP
Japan
Prior art keywords
resist
plasma
film
pattern
aluminyum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13233179A
Other languages
English (en)
Inventor
Kazuya Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13233179A priority Critical patent/JPS5655055A/ja
Publication of JPS5655055A publication Critical patent/JPS5655055A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP13233179A 1979-10-12 1979-10-12 Manufacture of semiconductor device Pending JPS5655055A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13233179A JPS5655055A (en) 1979-10-12 1979-10-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13233179A JPS5655055A (en) 1979-10-12 1979-10-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5655055A true JPS5655055A (en) 1981-05-15

Family

ID=15078818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13233179A Pending JPS5655055A (en) 1979-10-12 1979-10-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5655055A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828830A (ja) * 1981-07-27 1983-02-19 Nec Corp パターン形成法
JPS6237928A (ja) * 1985-08-13 1987-02-18 Matsushita Electronics Corp 金属パタ−ン形成方法
JPH01194439A (ja) * 1988-01-29 1989-08-04 Hitachi Ltd 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251866A (en) * 1975-10-23 1977-04-26 Fujitsu Ltd Production of metal electrode
JPS5255869A (en) * 1975-11-01 1977-05-07 Fujitsu Ltd Production of semiconductor device
JPS5373073A (en) * 1976-12-11 1978-06-29 Fujitsu Ltd Treatment method for photo resist

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251866A (en) * 1975-10-23 1977-04-26 Fujitsu Ltd Production of metal electrode
JPS5255869A (en) * 1975-11-01 1977-05-07 Fujitsu Ltd Production of semiconductor device
JPS5373073A (en) * 1976-12-11 1978-06-29 Fujitsu Ltd Treatment method for photo resist

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828830A (ja) * 1981-07-27 1983-02-19 Nec Corp パターン形成法
JPH0239090B2 (ja) * 1981-07-27 1990-09-04 Nippon Electric Co
JPS6237928A (ja) * 1985-08-13 1987-02-18 Matsushita Electronics Corp 金属パタ−ン形成方法
JPH01194439A (ja) * 1988-01-29 1989-08-04 Hitachi Ltd 半導体装置の製造方法

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