JPS5617935B2 - - Google Patents

Info

Publication number
JPS5617935B2
JPS5617935B2 JP2549477A JP2549477A JPS5617935B2 JP S5617935 B2 JPS5617935 B2 JP S5617935B2 JP 2549477 A JP2549477 A JP 2549477A JP 2549477 A JP2549477 A JP 2549477A JP S5617935 B2 JPS5617935 B2 JP S5617935B2
Authority
JP
Japan
Prior art keywords
mixed vapor
mixing chamber
vapors
substrate
mixing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2549477A
Other languages
English (en)
Other versions
JPS53110973A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2549477A priority Critical patent/JPS53110973A/ja
Priority to DE2807803A priority patent/DE2807803C2/de
Publication of JPS53110973A publication Critical patent/JPS53110973A/ja
Priority to US06/080,220 priority patent/US4281029A/en
Priority to US06/080,219 priority patent/US4286545A/en
Publication of JPS5617935B2 publication Critical patent/JPS5617935B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/045—Electric field
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/961—Ion beam source and generation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2549477A 1977-03-10 1977-03-10 Method and apparatus for manufacturing compounds Granted JPS53110973A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2549477A JPS53110973A (en) 1977-03-10 1977-03-10 Method and apparatus for manufacturing compounds
DE2807803A DE2807803C2 (de) 1977-03-10 1978-02-23 Verfahren und Vorrichtung zur Herstellung von aus Verbindungen bestehenden Dünnschichten
US06/080,220 US4281029A (en) 1977-03-10 1979-10-01 Method of coating with a stoichiometric compound
US06/080,219 US4286545A (en) 1977-03-10 1979-10-01 Apparatus for vapor depositing a stoichiometric compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2549477A JPS53110973A (en) 1977-03-10 1977-03-10 Method and apparatus for manufacturing compounds

Publications (2)

Publication Number Publication Date
JPS53110973A JPS53110973A (en) 1978-09-28
JPS5617935B2 true JPS5617935B2 (ja) 1981-04-25

Family

ID=12167599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2549477A Granted JPS53110973A (en) 1977-03-10 1977-03-10 Method and apparatus for manufacturing compounds

Country Status (3)

Country Link
US (2) US4286545A (ja)
JP (1) JPS53110973A (ja)
DE (1) DE2807803C2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6321537B2 (ja) * 1981-06-25 1988-05-07 Iseki Agricult Mach
US11333401B2 (en) 2017-07-04 2022-05-17 Mitsubishi Electric Corporation Refrigeration cycle apparatus

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US4401052A (en) * 1979-05-29 1983-08-30 The University Of Delaware Apparatus for continuous deposition by vacuum evaporation
JPS55160422A (en) * 1979-05-31 1980-12-13 Matsushita Electric Ind Co Ltd Method and device for thin film growth
DE3035992A1 (de) * 1980-09-24 1982-05-19 The University of Delaware, Newark, Del. Verfahren und vorrichtung zum auftragen von materialien durch aufdampfen
FR2501726B1 (fr) * 1981-03-13 1985-11-08 Univ Delaware Procede et appareil de depot d'un materiau par evaporation sous vide
JPS5834172A (ja) * 1981-08-26 1983-02-28 Mitsubishi Heavy Ind Ltd 合金蒸着用蒸発源構造
US4443488A (en) * 1981-10-19 1984-04-17 Spire Corporation Plasma ion deposition process
US4620968A (en) * 1981-12-30 1986-11-04 Stauffer Chemical Company Monoclinic phosphorus formed from vapor in the presence of an alkali metal
US4508931A (en) * 1981-12-30 1985-04-02 Stauffer Chemical Company Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
DE3371295D1 (en) * 1982-03-01 1987-06-11 Toyota Motor Co Ltd A method and apparatus for making a fine powder compound of a metal and another element
JPS58167602A (ja) * 1982-03-29 1983-10-03 Futaba Corp 有機物薄膜の形成方法
US4576697A (en) * 1983-04-21 1986-03-18 Combustion Engineering, Inc. Synthesis of carbon-containing intercalatable layered transition metal chalocogenides
US4518846A (en) * 1984-06-11 1985-05-21 International Business Machines Corporation Heater assembly for molecular beam epitaxy furnace
JPS61223719A (ja) * 1985-03-28 1986-10-04 Futaba Corp 光制御素子
DE3628443C1 (de) * 1986-08-21 1988-02-11 Dornier System Gmbh Verfahren zur Erzeugung amorpher Schichten
JPH074523B2 (ja) * 1986-09-25 1995-01-25 キヤノン株式会社 反応装置
DE3634598C2 (de) * 1986-10-10 1994-06-16 Leybold Ag Verfahren und Vorrichtung zum reaktiven Aufdampfen von Metallverbindungen
KR930007853B1 (ko) * 1986-12-10 1993-08-20 후지 세이끼 가부시기 가이샤 진공 증발장치
US4856457A (en) * 1987-02-20 1989-08-15 Hughes Aircraft Company Cluster source for nonvolatile species, having independent temperature control
US4833319A (en) * 1987-02-27 1989-05-23 Hughes Aircraft Company Carrier gas cluster source for thermally conditioned clusters
US5031408A (en) * 1988-04-19 1991-07-16 The Boeing Company Film deposition system
US4902572A (en) * 1988-04-19 1990-02-20 The Boeing Company Film deposition system
US5156815A (en) * 1988-09-08 1992-10-20 Board Of Regents, The University Of Texas System Sublimating and cracking apparatus
US5080870A (en) * 1988-09-08 1992-01-14 Board Of Regents, The University Of Texas System Sublimating and cracking apparatus
US5186120A (en) * 1989-03-22 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Mixture thin film forming apparatus
US5015492A (en) * 1989-04-03 1991-05-14 Rutgers University Method and apparatus for pulsed energy induced vapor deposition of thin films
US5157240A (en) * 1989-09-13 1992-10-20 Chow Loren A Deposition heaters
US5031229A (en) * 1989-09-13 1991-07-09 Chow Loren A Deposition heaters
JPH0831409B2 (ja) * 1990-02-14 1996-03-27 株式会社東芝 化合物半導体装置およびその製造方法
DE4006489A1 (de) * 1990-03-02 1991-09-05 Hoechst Ag Vorrichtung zum herstellen duenner schichten aus metallmischoxiden aus organischen metallverbindungen auf einem substrat
US5468562A (en) * 1991-03-01 1995-11-21 Spire Corporation Metallized polymeric implant with ion embedded coating
US5520664A (en) * 1991-03-01 1996-05-28 Spire Corporation Catheter having a long-lasting antimicrobial surface treatment
WO1993007924A1 (en) * 1991-10-18 1993-04-29 Spire Corporation Bactericidal coatings for implants
US5236509A (en) * 1992-02-06 1993-08-17 Spire Corporation Modular ibad apparatus for continuous coating
US5492763A (en) * 1992-06-08 1996-02-20 Spire Corporation Infection resistant medical devices and process
US5417766A (en) * 1994-04-26 1995-05-23 Itt Corporation Channel evaporator
US6152074A (en) * 1996-10-30 2000-11-28 Applied Materials, Inc. Deposition of a thin film on a substrate using a multi-beam source
DE19852325C1 (de) * 1998-11-12 2000-05-11 Siemens Ag Verfahren zum Erzeugen eines kontinuierlichen Dampfstromes enthaltend eine Verbindung, in der Gallium in einwertiger Form vorliegt, Verdampfungstiegel zum Verdampfen einer Substanz sowie Verwendung des Verdampfungstiegels in einer Vakuumbeschichtungsvorrichtung
EP1174526A1 (en) * 2000-07-17 2002-01-23 Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO Continuous vapour deposition
JP3910466B2 (ja) * 2002-02-26 2007-04-25 独立行政法人科学技術振興機構 半導体又は絶縁体／金属・層状複合クラスタの作製方法及び製造装置
US7390535B2 (en) * 2003-07-03 2008-06-24 Aeromet Technologies, Inc. Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings
US7288286B2 (en) * 2004-09-21 2007-10-30 Eastman Kodak Company Delivering organic powder to a vaporization zone
US7670964B2 (en) * 2007-03-22 2010-03-02 Tokyo Electron Limited Apparatus and methods of forming a gas cluster ion beam using a low-pressure source
CN101994087B (zh) * 2009-08-14 2013-04-24 鸿富锦精密工业（深圳）有限公司 蒸镀装置
US20110104398A1 (en) * 2009-10-29 2011-05-05 General Electric Company Method and system for depositing multiple materials on a substrate
WO2011082179A1 (en) * 2009-12-28 2011-07-07 Global Solar Energy, Inc. Apparatus and methods of mixing and depositing thin film photovoltaic compositions
US20120052617A1 (en) * 2010-12-20 2012-03-01 General Electric Company Vapor deposition apparatus and process for continuous deposition of a doped thin film layer on a substrate
US8778081B2 (en) * 2012-01-04 2014-07-15 Colorado State University Research Foundation Process and hardware for deposition of complex thin-film alloys over large areas
JP2013163845A (ja) * 2012-02-10 2013-08-22 Nitto Denko Corp 蒸着用坩堝及び蒸着装置並びに蒸着方法
JP5943654B2 (ja) * 2012-03-08 2016-07-05 日立造船株式会社 蒸着材料ガス混合装置
US20130302520A1 (en) * 2012-05-11 2013-11-14 Kai-An Wang Co-evaporation system comprising vapor pre-mixer
JP6117509B2 (ja) * 2012-10-17 2017-04-19 株式会社アルバック 蒸着装置
JP6222929B2 (ja) * 2013-01-15 2017-11-01 日立造船株式会社 真空蒸着装置
FR3024162A1 (fr) * 2014-07-28 2016-01-29 Nexcis Dispositif et procede pour la formation d'une couche mince sur un substrat
KR20160123438A (ko) * 2015-04-15 2016-10-26 삼성디스플레이 주식회사 유기 발광 디스플레이 장치용 증착원

Citations (2)

* Cited by examiner, † Cited by third party
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JPS523583A (en) * 1975-06-27 1977-01-12 Toshinori Takagi Crystal film forming process
JPS524167A (en) * 1975-06-27 1977-01-13 Futaba Corp Manufacturing process of p-n junction type solid element

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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523583A (en) * 1975-06-27 1977-01-12 Toshinori Takagi Crystal film forming process
JPS524167A (en) * 1975-06-27 1977-01-13 Futaba Corp Manufacturing process of p-n junction type solid element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6321537B2 (ja) * 1981-06-25 1988-05-07 Iseki Agricult Mach
US11333401B2 (en) 2017-07-04 2022-05-17 Mitsubishi Electric Corporation Refrigeration cycle apparatus

Also Published As

Publication number Publication date
US4286545A (en) 1981-09-01
JPS53110973A (en) 1978-09-28
DE2807803A1 (de) 1978-09-14
DE2807803C2 (de) 1983-05-05
US4281029A (en) 1981-07-28

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