JPS57171660A - Method and device for vacuum deposition - Google Patents

Method and device for vacuum deposition

Info

Publication number
JPS57171660A
JPS57171660A JP5737681A JP5737681A JPS57171660A JP S57171660 A JPS57171660 A JP S57171660A JP 5737681 A JP5737681 A JP 5737681A JP 5737681 A JP5737681 A JP 5737681A JP S57171660 A JPS57171660 A JP S57171660A
Authority
JP
Japan
Prior art keywords
gas
electric charge
charge exchanging
evaporating material
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5737681A
Other languages
Japanese (ja)
Inventor
Masatoshi Takao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5737681A priority Critical patent/JPS57171660A/en
Publication of JPS57171660A publication Critical patent/JPS57171660A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a thin film of high quality easily by ionizing and accelerating the gas to be acted upon the gaseous flow of an evaporating material, further neutralizing the same and releasing this gas to the evaporating material in a vacuum chamber. CONSTITUTION:The gas to be released to the gaseous flow of an evaporating material is first introduced through an introduction port 6 into an ionization chamber 7, where it is ionized. The ionized gas is accelerated to several hundreds eV-several KeV by an accelerating electrode 8, and in an electric charge exchanging chamber 11, it is brought into collosion against the neutral gas of the same kind introduced through an introduction port 10 for electric charge exchanging gas, whereby electric charge exchanging is effected. The neutralized gas advances straightforward while retaining energy, but the electric charge exchanging gas is discharged with a vacuum pump 12. Of the gas flowing straightforward, some fails to be neutralized and therefore a magnetic field is applied thereto with a generator 13 for removal of ion components to deflect ion components, so that only the neutral gas is conducted through a neutral gas flow nozzle 15 into a vacuum vessel, where it is used for vacuum deposition.
JP5737681A 1981-04-15 1981-04-15 Method and device for vacuum deposition Pending JPS57171660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5737681A JPS57171660A (en) 1981-04-15 1981-04-15 Method and device for vacuum deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5737681A JPS57171660A (en) 1981-04-15 1981-04-15 Method and device for vacuum deposition

Publications (1)

Publication Number Publication Date
JPS57171660A true JPS57171660A (en) 1982-10-22

Family

ID=13053872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5737681A Pending JPS57171660A (en) 1981-04-15 1981-04-15 Method and device for vacuum deposition

Country Status (1)

Country Link
JP (1) JPS57171660A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533944A1 (en) * 1982-09-30 1984-04-06 Western Electric Co METHOD FOR MANUFACTURING ARTICLES BY VAPOR DEPOSITION OF A MATERIAL WITH MULTIPLE CONSTITUENTS
EP0399470A2 (en) * 1989-05-24 1990-11-28 Hitachi, Ltd. Method for growing thin film by beam deposition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533944A1 (en) * 1982-09-30 1984-04-06 Western Electric Co METHOD FOR MANUFACTURING ARTICLES BY VAPOR DEPOSITION OF A MATERIAL WITH MULTIPLE CONSTITUENTS
EP0399470A2 (en) * 1989-05-24 1990-11-28 Hitachi, Ltd. Method for growing thin film by beam deposition
US5192393A (en) * 1989-05-24 1993-03-09 Hitachi, Ltd. Method for growing thin film by beam deposition and apparatus for practicing the same

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