JPS57205952A - Ion implanting device - Google Patents
Ion implanting deviceInfo
- Publication number
- JPS57205952A JPS57205952A JP8916481A JP8916481A JPS57205952A JP S57205952 A JPS57205952 A JP S57205952A JP 8916481 A JP8916481 A JP 8916481A JP 8916481 A JP8916481 A JP 8916481A JP S57205952 A JPS57205952 A JP S57205952A
- Authority
- JP
- Japan
- Prior art keywords
- ion source
- gas
- source system
- filament
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
PURPOSE:To obtain an ion implanting device which can realize an increased beam current and a shortened implantation time, and can increase the beam current to about 1.5 times in performing implantation of, especially, phosphorus ions by supplying an ion source gas into an ion source system after heating the said gas. CONSTITUTION:In forming, for example, phosphorus ions (P<+>) in an ion source system, a hydrogen (H2) gas contaminated with about 20% of, for example, phosphine (PH3) is heated with a desired power by means of a heater 21, while exhausting the above ion source system to a vacuum degree of around 10<-6>Torr, and the heated hydrogen gas is made to flow into an arc chamber 13 at a desired quantity of flow so as to maintain the vacuum degree of the above ion source system at around 10<-5>Torr. After that, a filament 14 is heated to a desired temperature by means of a d.c. power source 23 so as to make thermions to be discharged. Besides, an arc voltage of around several ten volts to 200 volts is applied across the filament 14 and the are chamber 13 so that the filament 14 becomes a cathode by means of a d.c. power source 24, so that the above thermions are accelerated by the above arc voltage and that the molecules of the above hydrogen gas fed into the chamber 13 bump against each other and are ionized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8916481A JPS57205952A (en) | 1981-06-10 | 1981-06-10 | Ion implanting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8916481A JPS57205952A (en) | 1981-06-10 | 1981-06-10 | Ion implanting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57205952A true JPS57205952A (en) | 1982-12-17 |
Family
ID=13963170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8916481A Pending JPS57205952A (en) | 1981-06-10 | 1981-06-10 | Ion implanting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57205952A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000100748A (en) * | 1998-09-24 | 2000-04-07 | Sony Corp | Manufacture of semiconductor device |
| KR100394068B1 (en) * | 1998-11-06 | 2003-09-19 | 엘지.필립스 엘시디 주식회사 | Impurity Doping Device |
-
1981
- 1981-06-10 JP JP8916481A patent/JPS57205952A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000100748A (en) * | 1998-09-24 | 2000-04-07 | Sony Corp | Manufacture of semiconductor device |
| JP4553076B2 (en) * | 1998-09-24 | 2010-09-29 | ソニー株式会社 | Manufacturing method of semiconductor device |
| KR100394068B1 (en) * | 1998-11-06 | 2003-09-19 | 엘지.필립스 엘시디 주식회사 | Impurity Doping Device |
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