JPS56161676A - Electrode structure for thin film transistor - Google Patents
Electrode structure for thin film transistorInfo
- Publication number
- JPS56161676A JPS56161676A JP6572080A JP6572080A JPS56161676A JP S56161676 A JPS56161676 A JP S56161676A JP 6572080 A JP6572080 A JP 6572080A JP 6572080 A JP6572080 A JP 6572080A JP S56161676 A JPS56161676 A JP S56161676A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gate electrode
- thin film
- approx
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000010408 film Substances 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Liquid Crystal (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6572080A JPS56161676A (en) | 1980-05-16 | 1980-05-16 | Electrode structure for thin film transistor |
US06/261,545 US4425572A (en) | 1980-05-16 | 1981-05-07 | Thin film transistor |
GB8114302A GB2077994B (en) | 1980-05-16 | 1981-05-11 | Thin film transistors |
DE3118674A DE3118674C2 (de) | 1980-05-16 | 1981-05-12 | Dünnfilmtransistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6572080A JPS56161676A (en) | 1980-05-16 | 1980-05-16 | Electrode structure for thin film transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56161676A true JPS56161676A (en) | 1981-12-12 |
JPS626672B2 JPS626672B2 (ja) | 1987-02-12 |
Family
ID=13295128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6572080A Granted JPS56161676A (en) | 1980-05-16 | 1980-05-16 | Electrode structure for thin film transistor |
Country Status (4)
Country | Link |
---|---|
US (1) | US4425572A (ja) |
JP (1) | JPS56161676A (ja) |
DE (1) | DE3118674C2 (ja) |
GB (1) | GB2077994B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58116573A (ja) * | 1981-12-29 | 1983-07-11 | セイコーエプソン株式会社 | マトリックス表示装置の製造方法 |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2118774B (en) * | 1982-02-25 | 1985-11-27 | Sharp Kk | Insulated gate thin film transistor |
FR2533072B1 (fr) * | 1982-09-14 | 1986-07-18 | Coissard Pierre | Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs |
US4651185A (en) * | 1983-08-15 | 1987-03-17 | Alphasil, Inc. | Method of manufacturing thin film transistors and transistors made thereby |
JPH0693509B2 (ja) * | 1983-08-26 | 1994-11-16 | シャープ株式会社 | 薄膜トランジスタ |
JPS60103676A (ja) * | 1983-11-11 | 1985-06-07 | Seiko Instr & Electronics Ltd | 薄膜トランジスタアレイの製造方法 |
JPH0752776B2 (ja) * | 1985-01-24 | 1995-06-05 | シャープ株式会社 | 薄膜トランジスタおよびその製造法 |
US4882295A (en) * | 1985-07-26 | 1989-11-21 | Energy Conversion Devices, Inc. | Method of making a double injection field effect transistor |
US5648663A (en) * | 1985-08-05 | 1997-07-15 | Canon Kabushiki Kaisha | Semiconductor structure having transistor and other elements on a common substrate and process for producing the same |
DE3640174A1 (de) * | 1985-11-27 | 1987-06-04 | Sharp Kk | Duennfilm-transistor-anordnung |
JPH0746729B2 (ja) * | 1985-12-26 | 1995-05-17 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
EP0270323B1 (en) * | 1986-11-29 | 1999-11-03 | Sharp Kabushiki Kaisha | Method of manufacture of a thin-film transistor |
EP0341003B1 (en) * | 1988-04-30 | 1994-08-31 | Sharp Kabushiki Kaisha | Thin film semiconductor device and liquid crystal display apparatus using thereof |
JPH0214578A (ja) * | 1988-07-01 | 1990-01-18 | Fujitsu Ltd | 半導体装置 |
KR910007142A (ko) * | 1988-09-30 | 1991-04-30 | 미다 가쓰시게 | 박막 광트랜지스터와 그것을 사용한 광센서어레이 |
US5200634A (en) * | 1988-09-30 | 1993-04-06 | Hitachi, Ltd. | Thin film phototransistor and photosensor array using the same |
US5270229A (en) * | 1989-03-07 | 1993-12-14 | Matsushita Electric Industrial Co., Ltd. | Thin film semiconductor device and process for producing thereof |
US4998146A (en) * | 1989-05-24 | 1991-03-05 | Xerox Corporation | High voltage thin film transistor |
JP2658569B2 (ja) * | 1990-11-28 | 1997-09-30 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
US5327834A (en) * | 1992-05-28 | 1994-07-12 | Thiokol Corporation | Integrated field-effect initiator |
US6674562B1 (en) * | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7830587B2 (en) * | 1993-03-17 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light with semiconductor substrate |
US7738157B2 (en) * | 1994-05-05 | 2010-06-15 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US7839556B2 (en) * | 1994-05-05 | 2010-11-23 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US7808694B2 (en) * | 1994-05-05 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US8014059B2 (en) * | 1994-05-05 | 2011-09-06 | Qualcomm Mems Technologies, Inc. | System and method for charge control in a MEMS device |
US8081369B2 (en) * | 1994-05-05 | 2011-12-20 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US7852545B2 (en) * | 1994-05-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US7800809B2 (en) * | 1994-05-05 | 2010-09-21 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US7776631B2 (en) * | 1994-05-05 | 2010-08-17 | Qualcomm Mems Technologies, Inc. | MEMS device and method of forming a MEMS device |
US7826120B2 (en) * | 1994-05-05 | 2010-11-02 | Qualcomm Mems Technologies, Inc. | Method and device for multi-color interferometric modulation |
US7898722B2 (en) * | 1995-05-01 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with restoring electrode |
US7929197B2 (en) * | 1996-11-05 | 2011-04-19 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US7830588B2 (en) * | 1996-12-19 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method of making a light modulating display device and associated transistor circuitry and structures thereof |
US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
WO1999052006A2 (en) * | 1998-04-08 | 1999-10-14 | Etalon, Inc. | Interferometric modulation of radiation |
US20070178710A1 (en) * | 2003-08-18 | 2007-08-02 | 3M Innovative Properties Company | Method for sealing thin film transistors |
US7476327B2 (en) * | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
US7446927B2 (en) * | 2004-09-27 | 2008-11-04 | Idc, Llc | MEMS switch with set and latch electrodes |
US7724993B2 (en) * | 2004-09-27 | 2010-05-25 | Qualcomm Mems Technologies, Inc. | MEMS switches with deforming membranes |
US7427776B2 (en) * | 2004-10-07 | 2008-09-23 | Hewlett-Packard Development Company, L.P. | Thin-film transistor and methods |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US7550810B2 (en) * | 2006-02-23 | 2009-06-23 | Qualcomm Mems Technologies, Inc. | MEMS device having a layer movable at asymmetric rates |
US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
US7684106B2 (en) * | 2006-11-02 | 2010-03-23 | Qualcomm Mems Technologies, Inc. | Compatible MEMS switch architecture |
US7724417B2 (en) * | 2006-12-19 | 2010-05-25 | Qualcomm Mems Technologies, Inc. | MEMS switches with deforming membranes |
JP5492571B2 (ja) * | 2007-02-20 | 2014-05-14 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Memsのエッチングを行うための機器および方法 |
US8022896B2 (en) * | 2007-08-08 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | ESD protection for MEMS display panels |
JP2011501874A (ja) * | 2007-09-14 | 2011-01-13 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Mems製造において使用されるエッチングプロセス |
KR20130100232A (ko) | 2010-04-09 | 2013-09-10 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 전기 기계 디바이스의 기계층 및 그 형성 방법 |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3616527A (en) | 1968-07-15 | 1971-11-02 | Ncr Co | Method of accurately doping a semiconductor material layer |
US3710205A (en) | 1971-04-09 | 1973-01-09 | Westinghouse Electric Corp | Electronic components having improved ionic stability |
JPS5368581A (en) | 1976-12-01 | 1978-06-19 | Hitachi Ltd | Semiconductor device |
JPS54154289A (en) | 1978-05-26 | 1979-12-05 | Matsushita Electric Ind Co Ltd | Manufacture of thin-film transistor array |
-
1980
- 1980-05-16 JP JP6572080A patent/JPS56161676A/ja active Granted
-
1981
- 1981-05-07 US US06/261,545 patent/US4425572A/en not_active Expired - Lifetime
- 1981-05-11 GB GB8114302A patent/GB2077994B/en not_active Expired
- 1981-05-12 DE DE3118674A patent/DE3118674C2/de not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58116573A (ja) * | 1981-12-29 | 1983-07-11 | セイコーエプソン株式会社 | マトリックス表示装置の製造方法 |
JPS6112268B2 (ja) * | 1981-12-29 | 1986-04-07 | Suwa Seikosha Kk |
Also Published As
Publication number | Publication date |
---|---|
GB2077994A (en) | 1981-12-23 |
GB2077994B (en) | 1984-07-11 |
US4425572A (en) | 1984-01-10 |
JPS626672B2 (ja) | 1987-02-12 |
DE3118674C2 (de) | 1984-05-30 |
DE3118674A1 (de) | 1982-01-28 |
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