JPS56140625A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS56140625A JPS56140625A JP4261780A JP4261780A JPS56140625A JP S56140625 A JPS56140625 A JP S56140625A JP 4261780 A JP4261780 A JP 4261780A JP 4261780 A JP4261780 A JP 4261780A JP S56140625 A JPS56140625 A JP S56140625A
- Authority
- JP
- Japan
- Prior art keywords
- blocking layer
- substrate
- etching
- mask
- abrasion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000000903 blocking effect Effects 0.000 abstract 5
- 238000005530 etching Methods 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000005299 abrasion Methods 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4261780A JPS56140625A (en) | 1980-04-01 | 1980-04-01 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4261780A JPS56140625A (en) | 1980-04-01 | 1980-04-01 | Manufacture of semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56140625A true JPS56140625A (en) | 1981-11-04 |
Family
ID=12640973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4261780A Pending JPS56140625A (en) | 1980-04-01 | 1980-04-01 | Manufacture of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56140625A (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS525286A (en) * | 1975-06-30 | 1977-01-14 | Ibm | Method of producing ic device |
JPS5230171A (en) * | 1975-09-03 | 1977-03-07 | Hitachi Ltd | Method for fabrication of semiconductor device |
-
1980
- 1980-04-01 JP JP4261780A patent/JPS56140625A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS525286A (en) * | 1975-06-30 | 1977-01-14 | Ibm | Method of producing ic device |
JPS5230171A (en) * | 1975-09-03 | 1977-03-07 | Hitachi Ltd | Method for fabrication of semiconductor device |
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