JPS56129374A - Writing and cancelling methods of fixed memory - Google Patents

Writing and cancelling methods of fixed memory

Info

Publication number
JPS56129374A
JPS56129374A JP2138480A JP2138480A JPS56129374A JP S56129374 A JPS56129374 A JP S56129374A JP 2138480 A JP2138480 A JP 2138480A JP 2138480 A JP2138480 A JP 2138480A JP S56129374 A JPS56129374 A JP S56129374A
Authority
JP
Japan
Prior art keywords
drain
voltage
substrate sub
writing
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2138480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6318864B2 (enrdf_load_stackoverflow
Inventor
Hideki Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2138480A priority Critical patent/JPS56129374A/ja
Publication of JPS56129374A publication Critical patent/JPS56129374A/ja
Publication of JPS6318864B2 publication Critical patent/JPS6318864B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2138480A 1980-02-22 1980-02-22 Writing and cancelling methods of fixed memory Granted JPS56129374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2138480A JPS56129374A (en) 1980-02-22 1980-02-22 Writing and cancelling methods of fixed memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2138480A JPS56129374A (en) 1980-02-22 1980-02-22 Writing and cancelling methods of fixed memory

Publications (2)

Publication Number Publication Date
JPS56129374A true JPS56129374A (en) 1981-10-09
JPS6318864B2 JPS6318864B2 (enrdf_load_stackoverflow) 1988-04-20

Family

ID=12053586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2138480A Granted JPS56129374A (en) 1980-02-22 1980-02-22 Writing and cancelling methods of fixed memory

Country Status (1)

Country Link
JP (1) JPS56129374A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045999A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体不揮発性記憶装置
JPH01123454A (ja) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5535158A (en) * 1993-12-01 1996-07-09 Nec Corporation Non-volatile semiconductor memory device and method for erasure and production thereof
US7796442B2 (en) 2007-04-02 2010-09-14 Denso Corporation Nonvolatile semiconductor memory device and method of erasing and programming the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045999A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体不揮発性記憶装置
JPH01123454A (ja) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5535158A (en) * 1993-12-01 1996-07-09 Nec Corporation Non-volatile semiconductor memory device and method for erasure and production thereof
US7796442B2 (en) 2007-04-02 2010-09-14 Denso Corporation Nonvolatile semiconductor memory device and method of erasing and programming the same

Also Published As

Publication number Publication date
JPS6318864B2 (enrdf_load_stackoverflow) 1988-04-20

Similar Documents

Publication Publication Date Title
JPS55124259A (en) Semiconductor device
JPS649663A (en) Electrically erasable programmable read-only memory
JPS5333076A (en) Production of mos type integrated circuit
GB1383981A (en) Electrically alterable floating gate device and method for altering same
IE812977L (en) Semiconductors memory device
JPS56129374A (en) Writing and cancelling methods of fixed memory
JPS5228277A (en) Non-voltatile semiconductor memory device
JPS5543862A (en) Semiconductor nonvolatile memory
JPS56104473A (en) Semiconductor memory device and manufacture thereof
JPS56107575A (en) Manufacture of semicondutor device
JPS5593591A (en) Driving system of semiconductor memory device
JPS5350985A (en) Semiconductor memory device
JPS57105890A (en) Semiconductor storage device
JPS55153375A (en) Non-volatile semiconductor memory device
JPS5660052A (en) Semiconductor memory device
JPS6417478A (en) Semiconductor storage cell
JPS5466781A (en) Semiconductor memory unit
JPS57102072A (en) Semiconductor memory storage
JPS54138381A (en) Semiconductor memory device
JPS6428869A (en) Semiconductor device
JPS56108270A (en) Semiconductor non volatile memory device
JPS57192044A (en) Semiconductor device
JPS5591180A (en) Non-volatile semiconductor memory
JPS57160163A (en) Nonvolatile semiconductor memory
JPS57162371A (en) Mos semiconductor memory device