JPS6417478A - Semiconductor storage cell - Google Patents
Semiconductor storage cellInfo
- Publication number
- JPS6417478A JPS6417478A JP62174123A JP17412387A JPS6417478A JP S6417478 A JPS6417478 A JP S6417478A JP 62174123 A JP62174123 A JP 62174123A JP 17412387 A JP17412387 A JP 17412387A JP S6417478 A JPS6417478 A JP S6417478A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- region
- nitride film
- tunnel region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To reduce a band gap of a tunnel region and to reduce writing/erasing voltages by forming the tunnel region between a nitride film to be injected with charge and a substrate of a 2-layer structure of the nitride film in contact with the substrate and an oxide film. CONSTITUTION:A first nitride film 13 in contact with a silicon substrate 1 is formed over between a source region S and a drain region D on the substrate 1, a second nitride film 15 is formed through a first oxide film 15 on the film 13, and a control gate 6 is formed through the film 12 on the film 15. Thus, when a tunnel region between the film 15 to be injected with charge and the substrate 1 is formed of a 2-layer structure of the films 13, 14, the band gap of energy in the tunnel region can be reduced. As a result, writing/erasing voltages can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62174123A JPS6417478A (en) | 1987-07-13 | 1987-07-13 | Semiconductor storage cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62174123A JPS6417478A (en) | 1987-07-13 | 1987-07-13 | Semiconductor storage cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6417478A true JPS6417478A (en) | 1989-01-20 |
Family
ID=15973052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62174123A Pending JPS6417478A (en) | 1987-07-13 | 1987-07-13 | Semiconductor storage cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6417478A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1637339A1 (en) | 2004-09-21 | 2006-03-22 | Ricoh Company, Ltd. | Thermal recording material |
JP5196500B2 (en) * | 2007-05-24 | 2013-05-15 | 独立行政法人産業技術総合研究所 | Storage element and reading method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57206077A (en) * | 1981-06-12 | 1982-12-17 | Nec Corp | Non volatile memory device |
JPS59188977A (en) * | 1983-04-12 | 1984-10-26 | Citizen Watch Co Ltd | Manufacture of semiconductor non volatile memory device |
-
1987
- 1987-07-13 JP JP62174123A patent/JPS6417478A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57206077A (en) * | 1981-06-12 | 1982-12-17 | Nec Corp | Non volatile memory device |
JPS59188977A (en) * | 1983-04-12 | 1984-10-26 | Citizen Watch Co Ltd | Manufacture of semiconductor non volatile memory device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1637339A1 (en) | 2004-09-21 | 2006-03-22 | Ricoh Company, Ltd. | Thermal recording material |
US7476643B2 (en) | 2004-09-21 | 2009-01-13 | Ricoh Company, Ltd. | Thermal recording material and thermal recording label |
JP5196500B2 (en) * | 2007-05-24 | 2013-05-15 | 独立行政法人産業技術総合研究所 | Storage element and reading method thereof |
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