JPS6318864B2 - - Google Patents

Info

Publication number
JPS6318864B2
JPS6318864B2 JP2138480A JP2138480A JPS6318864B2 JP S6318864 B2 JPS6318864 B2 JP S6318864B2 JP 2138480 A JP2138480 A JP 2138480A JP 2138480 A JP2138480 A JP 2138480A JP S6318864 B2 JPS6318864 B2 JP S6318864B2
Authority
JP
Japan
Prior art keywords
substrate
voltage
floating gate
drain
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2138480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56129374A (en
Inventor
Hideki Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2138480A priority Critical patent/JPS56129374A/ja
Publication of JPS56129374A publication Critical patent/JPS56129374A/ja
Publication of JPS6318864B2 publication Critical patent/JPS6318864B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP2138480A 1980-02-22 1980-02-22 Writing and cancelling methods of fixed memory Granted JPS56129374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2138480A JPS56129374A (en) 1980-02-22 1980-02-22 Writing and cancelling methods of fixed memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2138480A JPS56129374A (en) 1980-02-22 1980-02-22 Writing and cancelling methods of fixed memory

Publications (2)

Publication Number Publication Date
JPS56129374A JPS56129374A (en) 1981-10-09
JPS6318864B2 true JPS6318864B2 (enrdf_load_stackoverflow) 1988-04-20

Family

ID=12053586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2138480A Granted JPS56129374A (en) 1980-02-22 1980-02-22 Writing and cancelling methods of fixed memory

Country Status (1)

Country Link
JP (1) JPS56129374A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045999A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体不揮発性記憶装置
JPH01123454A (ja) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2848223B2 (ja) * 1993-12-01 1999-01-20 日本電気株式会社 不揮発性半導体記憶装置の消去方法及び製造方法
US7796442B2 (en) 2007-04-02 2010-09-14 Denso Corporation Nonvolatile semiconductor memory device and method of erasing and programming the same

Also Published As

Publication number Publication date
JPS56129374A (en) 1981-10-09

Similar Documents

Publication Publication Date Title
KR101004213B1 (ko) 반도체 장치
JP2672688B2 (ja) 不揮発性半導体記憶装置の駆動方法
JPH06302828A (ja) 半導体不揮発性記憶装置
JPS649741B2 (enrdf_load_stackoverflow)
JP4329293B2 (ja) 不揮発性半導体メモリ装置および電荷注入方法
KR100324191B1 (ko) 비휘발성반도체기억장치내에서의데이터소거방법
JPH04105368A (ja) 不揮発性半導体記憶装置及びその書き込み・消去方法
JPH031574A (ja) 不揮発性半導体記憶装置およびその製造方法
JPH05251669A (ja) 半導体記憶装置およびその書き換え方法
JPS6318864B2 (enrdf_load_stackoverflow)
JP3375087B2 (ja) 半導体記憶装置およびその記憶情報読出方法
JPH05304301A (ja) 不揮発性半導体メモリセルの書き換え方式
JP3069607B2 (ja) 半導体不揮発性メモリの動作方法
JP3069358B2 (ja) 半導体集積回路装置
JPS62183161A (ja) 半導体集積回路装置
JP3186209B2 (ja) 半導体装置の使用方法
KR19990029181A (ko) 불휘발성 반도체 기억장치 및 그 제조방법
JPH07112018B2 (ja) 半導体記憶装置
JP3073725B2 (ja) 半導体集積回路装置
JPH0451072B2 (enrdf_load_stackoverflow)
JP3324691B2 (ja) 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ書き換え方法
JP3104978B2 (ja) 不揮発性半導体記憶装置の制御方法
JPS61245577A (ja) 不揮発性半導体メモリ素子
JP3424898B2 (ja) 不揮発性半導体記憶装置の書き換え方法
JPH04336469A (ja) 不揮発性半導体記憶装置