JPS6428869A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6428869A
JPS6428869A JP18529587A JP18529587A JPS6428869A JP S6428869 A JPS6428869 A JP S6428869A JP 18529587 A JP18529587 A JP 18529587A JP 18529587 A JP18529587 A JP 18529587A JP S6428869 A JPS6428869 A JP S6428869A
Authority
JP
Japan
Prior art keywords
semiconductor device
ultraviolet radiation
film
constitution
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18529587A
Other languages
Japanese (ja)
Inventor
Eisuke Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP18529587A priority Critical patent/JPS6428869A/en
Publication of JPS6428869A publication Critical patent/JPS6428869A/en
Pending legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To increase the transmittance of ultraviolet radiation at the time of bit erasing, and to decrease the reflectivity, by forming an antireflection film on a silicon oxide film in a semiconductor device of ultraviolet radiation erasing type. CONSTITUTION:In a silicon substrate 1, a source drain layer 8 is formed, on the surface of which a floating gate 3, a control gate 4, and a silicon oxide film 2 are formed to make up a semiconductor device of ultraviolet radiation erasing type. In a semiconductor device having a constitution like this, an antireflection film 5 composed of a silicon nitride film or a TiO2 film is formed on the surface of the silicon oxide film 2. By making up a constitution like this, the transmittance of ultraviolet radiation can be increased at the time of bit erasing, and the reflectivity is decreased.
JP18529587A 1987-07-23 1987-07-23 Semiconductor device Pending JPS6428869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18529587A JPS6428869A (en) 1987-07-23 1987-07-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18529587A JPS6428869A (en) 1987-07-23 1987-07-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6428869A true JPS6428869A (en) 1989-01-31

Family

ID=16168360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18529587A Pending JPS6428869A (en) 1987-07-23 1987-07-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6428869A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592004A (en) * 1994-09-30 1997-01-07 Nippondenso Co., Ltd. Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries
WO2014129252A1 (en) * 2013-02-21 2014-08-28 セイコーインスツル株式会社 Ultraviolet-erasable nonvolatile semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592004A (en) * 1994-09-30 1997-01-07 Nippondenso Co., Ltd. Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries
US5877095A (en) * 1994-09-30 1999-03-02 Nippondenso Co., Ltd. Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen
WO2014129252A1 (en) * 2013-02-21 2014-08-28 セイコーインスツル株式会社 Ultraviolet-erasable nonvolatile semiconductor device
JP2014165191A (en) * 2013-02-21 2014-09-08 Seiko Instruments Inc Ultraviolet ray erasure type nonvolatile semiconductor device
CN105074887A (en) * 2013-02-21 2015-11-18 精工电子有限公司 Ultraviolet-erasable nonvolatile semiconductor device

Similar Documents

Publication Publication Date Title
JPS57157573A (en) Semiconductor non-volatile memory cell
EP0342796A3 (en) Thin-film transistor
JPS5642377A (en) Ultraviolet ray erasable type rewritable read-only memory
JPS5362989A (en) Semiconductor memory device
JPS5642375A (en) Semiconductor nonvolatile memory
EP0301460A3 (en) Ultraviolet erasable nonvolatile semiconductor device
TW324859B (en) Manufacturing method of non-volatile semiconductor memory with erasing gate
JPS6428869A (en) Semiconductor device
JPS56108247A (en) Semiconductor device
JPS53123687A (en) Binary memory element
JPS56129374A (en) Writing and cancelling methods of fixed memory
EP0347148A3 (en) Semi-conductor non-volatile memory
JPS57155764A (en) Manufacture of semiconductor device
JPS57176771A (en) Semiconductor memory device
JPS5583267A (en) Method of fabricating semiconductor device
JPS5789259A (en) Semiconductor device
JPS54151380A (en) Mos transistor
JPS577973A (en) Semiconductor nonvolatile memory
JPS54107269A (en) Non-volatile semiconductor memory and its production
JPS6417478A (en) Semiconductor storage cell
JPS57104241A (en) Semiconductor device
JPS6450472A (en) Amorphous semiconductor solar cell
JPS57196580A (en) Nonvolatile semiconductor memory storage
TW208091B (en) The fabrication of read-only-memory
JPS54133088A (en) Semiconductor device