JPS56116670A - Semiconductor integrated circuit device and manufacture thereof - Google Patents
Semiconductor integrated circuit device and manufacture thereofInfo
- Publication number
- JPS56116670A JPS56116670A JP1898380A JP1898380A JPS56116670A JP S56116670 A JPS56116670 A JP S56116670A JP 1898380 A JP1898380 A JP 1898380A JP 1898380 A JP1898380 A JP 1898380A JP S56116670 A JPS56116670 A JP S56116670A
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- layer
- gate electrodes
- polycrystalline
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000002093 peripheral effect Effects 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 230000010354 integration Effects 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/44—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1898380A JPS56116670A (en) | 1980-02-20 | 1980-02-20 | Semiconductor integrated circuit device and manufacture thereof |
US06/186,739 US4373249A (en) | 1980-02-20 | 1980-09-12 | Method of manufacturing a semiconductor integrated circuit device |
DE19813106202 DE3106202A1 (de) | 1980-02-20 | 1981-02-19 | Integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung |
US06/897,391 US4764479A (en) | 1980-02-20 | 1986-08-15 | Semiconductor integrated circuit device and method of manufacturing the same |
US06/914,587 US4818718A (en) | 1980-02-20 | 1986-10-03 | Method of manufacturing semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1898380A JPS56116670A (en) | 1980-02-20 | 1980-02-20 | Semiconductor integrated circuit device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56116670A true JPS56116670A (en) | 1981-09-12 |
Family
ID=11986826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1898380A Pending JPS56116670A (en) | 1980-02-20 | 1980-02-20 | Semiconductor integrated circuit device and manufacture thereof |
Country Status (3)
Country | Link |
---|---|
US (3) | US4373249A (ja) |
JP (1) | JPS56116670A (ja) |
DE (1) | DE3106202A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS594170A (ja) * | 1982-06-30 | 1984-01-10 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPS6220376A (ja) * | 1985-07-19 | 1987-01-28 | Hitachi Ltd | 半導体集積回路装置 |
JPS63299280A (ja) * | 1987-05-29 | 1988-12-06 | Toshiba Corp | 半導体装置及びその製造方法 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56120166A (en) * | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
US4490900A (en) * | 1982-01-29 | 1985-01-01 | Seeq Technology, Inc. | Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein |
JPS5974677A (ja) * | 1982-10-22 | 1984-04-27 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
DE3316096A1 (de) * | 1983-05-03 | 1984-11-08 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von speicherzellen mit einem ein schwebendes gate aufweisenden mos-feldeffekttransistor |
US4769340A (en) * | 1983-11-28 | 1988-09-06 | Exel Microelectronics, Inc. | Method for making electrically programmable memory device by doping the floating gate by implant |
US5352620A (en) * | 1984-05-23 | 1994-10-04 | Hitachi, Ltd. | Method of making semiconductor device with memory cells and peripheral transistors |
KR930007195B1 (ko) * | 1984-05-23 | 1993-07-31 | 가부시끼가이샤 히다찌세이사꾸쇼 | 반도체 장치와 그 제조 방법 |
IT1213249B (it) * | 1984-11-26 | 1989-12-14 | Ates Componenti Elettron | Processo per la fabbricazione distrutture integrate includenti celle di memoria non volatili con strati di silicio autoallineati ed associati transistori. |
JPS61135165A (ja) * | 1984-12-05 | 1986-06-23 | Mitsubishi Electric Corp | 半導体メモリ装置 |
US4598460A (en) * | 1984-12-10 | 1986-07-08 | Solid State Scientific, Inc. | Method of making a CMOS EPROM with independently selectable thresholds |
US4590665A (en) * | 1984-12-10 | 1986-05-27 | Solid State Scientific, Inc. | Method for double doping sources and drains in an EPROM |
US4646425A (en) * | 1984-12-10 | 1987-03-03 | Solid State Scientific, Inc. | Method for making a self-aligned CMOS EPROM wherein the EPROM floating gate and CMOS gates are made from one polysilicon layer |
US4774202A (en) * | 1985-11-07 | 1988-09-27 | Sprague Electric Company | Memory device with interconnected polysilicon layers and method for making |
IT1196997B (it) * | 1986-07-25 | 1988-11-25 | Sgs Microelettronica Spa | Processo per realizzare strutture includenti celle di memoria non volatili e2prom con strati di silicio autoallineate transistori associati |
JPS6465873A (en) * | 1987-09-07 | 1989-03-13 | Oki Electric Ind Co Ltd | Manufacture of semiconductor element |
US5057448A (en) * | 1988-02-26 | 1991-10-15 | Hitachi, Ltd. | Method of making a semiconductor device having DRAM cells and floating gate memory cells |
US5086008A (en) * | 1988-02-29 | 1992-02-04 | Sgs-Thomson Microelectronics S.R.L. | Process for obtaining high-voltage N channel transistors particularly for EEPROM memories with CMOS technology |
US5153144A (en) * | 1988-05-10 | 1992-10-06 | Hitachi, Ltd. | Method of making tunnel EEPROM |
US5445980A (en) * | 1988-05-10 | 1995-08-29 | Hitachi, Ltd. | Method of making a semiconductor memory device |
US5008212A (en) * | 1988-12-12 | 1991-04-16 | Chen Teh Yi J | Selective asperity definition technique suitable for use in fabricating floating-gate transistor |
FR2642900B1 (fr) * | 1989-01-17 | 1991-05-10 | Sgs Thomson Microelectronics | Procede de fabrication de circuits integres a transistors de memoire eprom et a transistors logiques |
US5183773A (en) * | 1989-04-13 | 1993-02-02 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device including such input protection transistor |
JP2952887B2 (ja) * | 1989-05-20 | 1999-09-27 | 富士通株式会社 | 半導体装置およびその製造方法 |
DE3924062C2 (de) * | 1989-07-21 | 1993-11-25 | Eurosil Electronic Gmbh | EEPROM-Halbleitereinrichtung mit Isolierzonen für Niedervolt-Logikelemente |
JP2509717B2 (ja) * | 1989-12-06 | 1996-06-26 | 株式会社東芝 | 半導体装置の製造方法 |
US5010028A (en) * | 1989-12-29 | 1991-04-23 | Texas Instruments Incorporated | Method of making hot electron programmable, tunnel electron erasable contactless EEPROM |
US5234853A (en) * | 1990-03-05 | 1993-08-10 | Fujitsu Limited | Method of producing a high voltage MOS transistor |
US5188976A (en) * | 1990-07-13 | 1993-02-23 | Hitachi, Ltd. | Manufacturing method of non-volatile semiconductor memory device |
TW301782B (ja) * | 1991-08-16 | 1997-04-01 | Gold Star Electronics | |
EP0595250B1 (en) * | 1992-10-27 | 1999-01-07 | Nec Corporation | Method of fabricating non-volatile semiconductor memory device |
DE4340592C2 (de) * | 1993-11-29 | 2002-04-18 | Gold Star Electronics | Verfahren zum Herstellen eines nichtflüchtigen Halbleiterspeichers und einen nach diesem Verfahren hergestellten Halbleiterspeicher |
US5677215A (en) * | 1993-11-17 | 1997-10-14 | Lg Semicon Co., Ltd. | Method of fabricating a nonvolatile semiconductor memory device |
US5798968A (en) * | 1996-09-24 | 1998-08-25 | Sandisk Corporation | Plane decode/virtual sector architecture |
US6208003B1 (en) * | 1997-09-26 | 2001-03-27 | Nippon Steel Corporation | Semiconductor structure provided with a polycide interconnection layer having a silicide film formed on a polycrystal silicon film |
KR100262457B1 (ko) * | 1998-05-04 | 2000-08-01 | 윤종용 | 반도체 장치의 오픈 드레인 입출력단 구조 및 그 제조방법 |
US6399432B1 (en) * | 1998-11-24 | 2002-06-04 | Philips Semiconductors Inc. | Process to control poly silicon profiles in a dual doped poly silicon process |
US6451642B1 (en) * | 1999-07-14 | 2002-09-17 | Texas Instruments Incorporated | Method to implant NMOS polycrystalline silicon in embedded FLASH memory applications |
JP3922341B2 (ja) * | 2001-01-11 | 2007-05-30 | セイコーエプソン株式会社 | 不揮発性メモリトランジスタを有する半導体装置の製造方法 |
JP2005026380A (ja) * | 2003-06-30 | 2005-01-27 | Toshiba Corp | 不揮発性メモリを含む半導体装置及びその製造方法 |
US7969015B2 (en) * | 2005-06-14 | 2011-06-28 | Cufer Asset Ltd. L.L.C. | Inverse chip connector |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54137984A (en) * | 1978-04-18 | 1979-10-26 | Sharp Corp | Manufacture of floating gate mos semiconductor device |
JPS5591877A (en) * | 1978-12-30 | 1980-07-11 | Fujitsu Ltd | Manufacture of semiconductor device |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3930067A (en) * | 1966-04-16 | 1975-12-30 | Philips Corp | Method of providing polycrystalline layers of elementtary substances on substrates |
JPS5134268B2 (ja) * | 1972-07-13 | 1976-09-25 | ||
JPS5263686A (en) * | 1975-11-20 | 1977-05-26 | Toshiba Corp | Non-voltatile semiconductor memory device |
US4075045A (en) * | 1976-02-09 | 1978-02-21 | International Business Machines Corporation | Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps |
US4183040A (en) * | 1976-02-09 | 1980-01-08 | International Business Machines Corporation | MOS RAM with implant forming peripheral depletion MOSFET channels and capacitor bottom electrodes |
US4013489A (en) * | 1976-02-10 | 1977-03-22 | Intel Corporation | Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit |
US4151021A (en) * | 1977-01-26 | 1979-04-24 | Texas Instruments Incorporated | Method of making a high density floating gate electrically programmable ROM |
US4142926A (en) * | 1977-02-24 | 1979-03-06 | Intel Corporation | Self-aligning double polycrystalline silicon etching process |
US4123300A (en) * | 1977-05-02 | 1978-10-31 | International Business Machines Corporation | Integrated circuit process utilizing lift-off techniques |
US4178674A (en) * | 1978-03-27 | 1979-12-18 | Intel Corporation | Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor |
JPS54139495A (en) * | 1978-04-21 | 1979-10-29 | Hitachi Ltd | Manufacture of semiconductor memory |
US4326329A (en) * | 1978-05-18 | 1982-04-27 | Texas Instruments Incorporated | Method of making a contact programmable double level polysilicon MOS read only memory |
US4180826A (en) * | 1978-05-19 | 1979-12-25 | Intel Corporation | MOS double polysilicon read-only memory and cell |
US4273805A (en) * | 1978-06-19 | 1981-06-16 | Rca Corporation | Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer |
US4302766A (en) * | 1979-01-05 | 1981-11-24 | Texas Instruments Incorporated | Self-limiting erasable memory cell with triple level polysilicon |
DE2918888C2 (de) * | 1979-05-10 | 1984-10-18 | Siemens AG, 1000 Berlin und 8000 München | MNOS-Speicherzelle und Verfahren zu ihrem Betrieb sowie zu ihrer Herstellung |
JPS56120166A (en) * | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
JPS577162A (en) * | 1980-06-17 | 1982-01-14 | Toshiba Corp | Nonvolatile semiconductor memory and manufacture therefor |
JPS5963763A (ja) * | 1982-10-05 | 1984-04-11 | Fujitsu Ltd | 半導体装置の製造方法 |
US4458407A (en) * | 1983-04-01 | 1984-07-10 | International Business Machines Corporation | Process for fabricating semi-conductive oxide between two poly silicon gate electrodes |
-
1980
- 1980-02-20 JP JP1898380A patent/JPS56116670A/ja active Pending
- 1980-09-12 US US06/186,739 patent/US4373249A/en not_active Expired - Lifetime
-
1981
- 1981-02-19 DE DE19813106202 patent/DE3106202A1/de active Granted
-
1986
- 1986-08-15 US US06/897,391 patent/US4764479A/en not_active Expired - Lifetime
- 1986-10-03 US US06/914,587 patent/US4818718A/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54137984A (en) * | 1978-04-18 | 1979-10-26 | Sharp Corp | Manufacture of floating gate mos semiconductor device |
JPS5591877A (en) * | 1978-12-30 | 1980-07-11 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS594170A (ja) * | 1982-06-30 | 1984-01-10 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPS636155B2 (ja) * | 1982-06-30 | 1988-02-08 | Mitsubishi Electric Corp | |
JPS6220376A (ja) * | 1985-07-19 | 1987-01-28 | Hitachi Ltd | 半導体集積回路装置 |
JPS63299280A (ja) * | 1987-05-29 | 1988-12-06 | Toshiba Corp | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US4373249A (en) | 1983-02-15 |
DE3106202A1 (de) | 1981-12-03 |
US4764479A (en) | 1988-08-16 |
US4818718A (en) | 1989-04-04 |
DE3106202C2 (ja) | 1992-10-15 |
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