JPS56103446A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56103446A
JPS56103446A JP602880A JP602880A JPS56103446A JP S56103446 A JPS56103446 A JP S56103446A JP 602880 A JP602880 A JP 602880A JP 602880 A JP602880 A JP 602880A JP S56103446 A JPS56103446 A JP S56103446A
Authority
JP
Japan
Prior art keywords
groove
width
layer
sio2
tapered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP602880A
Other languages
English (en)
Japanese (ja)
Other versions
JPS631753B2 (enrdf_load_stackoverflow
Inventor
Akira Tabata
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP602880A priority Critical patent/JPS56103446A/ja
Publication of JPS56103446A publication Critical patent/JPS56103446A/ja
Publication of JPS631753B2 publication Critical patent/JPS631753B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP602880A 1980-01-22 1980-01-22 Semiconductor device Granted JPS56103446A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP602880A JPS56103446A (en) 1980-01-22 1980-01-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP602880A JPS56103446A (en) 1980-01-22 1980-01-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56103446A true JPS56103446A (en) 1981-08-18
JPS631753B2 JPS631753B2 (enrdf_load_stackoverflow) 1988-01-13

Family

ID=11627211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP602880A Granted JPS56103446A (en) 1980-01-22 1980-01-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56103446A (enrdf_load_stackoverflow)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743438A (en) * 1980-08-29 1982-03-11 Toshiba Corp Semiconductor device and manufacture thereof
JPS589333A (ja) * 1981-07-08 1983-01-19 Hitachi Ltd 半導体装置
JPS5832430A (ja) * 1981-08-21 1983-02-25 Toshiba Corp 半導体装置の製造方法
JPS58168261A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置の製造方法
JPS58216436A (ja) * 1982-06-09 1983-12-16 Nec Corp 半導体装置の製造方法
US4472240A (en) * 1981-08-21 1984-09-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device
JPS61270846A (ja) * 1985-05-24 1986-12-01 Matsushita Electronics Corp 半導体装置
JPS63313834A (ja) * 1988-01-13 1988-12-21 Hitachi Ltd 半導体集積回路
JPH02231739A (ja) * 1989-03-03 1990-09-13 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0430557A (ja) * 1990-05-28 1992-02-03 Toshiba Corp 半導体装置の製造方法
KR19980051524A (ko) * 1996-12-23 1998-09-15 김영환 반도체소자의 소자분리막 제조방법
US5858859A (en) * 1990-05-28 1999-01-12 Kabushiki Kaisha Toshiba Semiconductor device having a trench for device isolation fabrication method
US6177331B1 (en) 1997-06-04 2001-01-23 Nec Corporation Method for manufacturing semiconductor device
JP2017183410A (ja) * 2016-03-29 2017-10-05 芝浦メカトロニクス株式会社 処理物の処理方法、および処理物の処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4914399A (enrdf_load_stackoverflow) * 1972-05-22 1974-02-07
JPS4942276A (enrdf_load_stackoverflow) * 1972-05-17 1974-04-20
JPS4944787A (enrdf_load_stackoverflow) * 1972-08-31 1974-04-27

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942276A (enrdf_load_stackoverflow) * 1972-05-17 1974-04-20
JPS4914399A (enrdf_load_stackoverflow) * 1972-05-22 1974-02-07
JPS4944787A (enrdf_load_stackoverflow) * 1972-08-31 1974-04-27

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743438A (en) * 1980-08-29 1982-03-11 Toshiba Corp Semiconductor device and manufacture thereof
JPS589333A (ja) * 1981-07-08 1983-01-19 Hitachi Ltd 半導体装置
JPS5832430A (ja) * 1981-08-21 1983-02-25 Toshiba Corp 半導体装置の製造方法
US4472240A (en) * 1981-08-21 1984-09-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device
JPS58168261A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置の製造方法
JPS58216436A (ja) * 1982-06-09 1983-12-16 Nec Corp 半導体装置の製造方法
JPS61270846A (ja) * 1985-05-24 1986-12-01 Matsushita Electronics Corp 半導体装置
JPS63313834A (ja) * 1988-01-13 1988-12-21 Hitachi Ltd 半導体集積回路
JPH02231739A (ja) * 1989-03-03 1990-09-13 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0430557A (ja) * 1990-05-28 1992-02-03 Toshiba Corp 半導体装置の製造方法
US5858859A (en) * 1990-05-28 1999-01-12 Kabushiki Kaisha Toshiba Semiconductor device having a trench for device isolation fabrication method
KR19980051524A (ko) * 1996-12-23 1998-09-15 김영환 반도체소자의 소자분리막 제조방법
US6177331B1 (en) 1997-06-04 2001-01-23 Nec Corporation Method for manufacturing semiconductor device
JP2017183410A (ja) * 2016-03-29 2017-10-05 芝浦メカトロニクス株式会社 処理物の処理方法、および処理物の処理装置

Also Published As

Publication number Publication date
JPS631753B2 (enrdf_load_stackoverflow) 1988-01-13

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