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Fujitsu Ltd
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Fujitsu Ltd
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Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP14856476ApriorityCriticalpatent/JPS5372581A/en
Publication of JPS5372581ApublicationCriticalpatent/JPS5372581A/en
PURPOSE: To obtain a flat separating insulator film by etching and removing the field area by masking the element forming area on a semiconductor substrate surface with a polyimide layer and filling the field area with SiO2 film through the CVD method.
COPYRIGHT: (C)1978,JPO&Japio
JP14856476A1976-12-101976-12-10Separation method for insulator film
PendingJPS5372581A
(en)