JPS5552254A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5552254A
JPS5552254A JP12556778A JP12556778A JPS5552254A JP S5552254 A JPS5552254 A JP S5552254A JP 12556778 A JP12556778 A JP 12556778A JP 12556778 A JP12556778 A JP 12556778A JP S5552254 A JPS5552254 A JP S5552254A
Authority
JP
Japan
Prior art keywords
resistance
polysilicon
film
zone
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12556778A
Other languages
English (en)
Inventor
Koji Eguchi
Toru Tsujiide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12556778A priority Critical patent/JPS5552254A/ja
Publication of JPS5552254A publication Critical patent/JPS5552254A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP12556778A 1978-10-11 1978-10-11 Semiconductor device Pending JPS5552254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12556778A JPS5552254A (en) 1978-10-11 1978-10-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12556778A JPS5552254A (en) 1978-10-11 1978-10-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5552254A true JPS5552254A (en) 1980-04-16

Family

ID=14913379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12556778A Pending JPS5552254A (en) 1978-10-11 1978-10-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5552254A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989452A (ja) * 1982-10-07 1984-05-23 シ−・アイ・アイ・ハネウエル・ブル 多結晶半導体材料中に抵抗体を形成する方法、並びにこの方法により形成された抵抗体及び集積回路デバイス
US5338968A (en) * 1991-07-31 1994-08-16 Sgs-Thomson Method of forming isolated regions of oxide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989452A (ja) * 1982-10-07 1984-05-23 シ−・アイ・アイ・ハネウエル・ブル 多結晶半導体材料中に抵抗体を形成する方法、並びにこの方法により形成された抵抗体及び集積回路デバイス
US5338968A (en) * 1991-07-31 1994-08-16 Sgs-Thomson Method of forming isolated regions of oxide

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