JPS55160462A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55160462A JPS55160462A JP6787779A JP6787779A JPS55160462A JP S55160462 A JPS55160462 A JP S55160462A JP 6787779 A JP6787779 A JP 6787779A JP 6787779 A JP6787779 A JP 6787779A JP S55160462 A JPS55160462 A JP S55160462A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- gates
- gate
- semiconductor device
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6787779A JPS55160462A (en) | 1979-05-31 | 1979-05-31 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6787779A JPS55160462A (en) | 1979-05-31 | 1979-05-31 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55160462A true JPS55160462A (en) | 1980-12-13 |
| JPS628949B2 JPS628949B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-02-25 |
Family
ID=13357571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6787779A Granted JPS55160462A (en) | 1979-05-31 | 1979-05-31 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55160462A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS582068A (ja) * | 1981-06-26 | 1983-01-07 | Toshiba Corp | 半導体装置およびその製造方法 |
| JPS5957469A (ja) * | 1982-09-28 | 1984-04-03 | Fujitsu Ltd | 半導体装置 |
| JPS6276665A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 相補型半導体装置 |
| JPS6381984A (ja) * | 1986-09-26 | 1988-04-12 | Nippon Denso Co Ltd | 多結晶半導体ダイオ−ド |
| JP2017191926A (ja) * | 2016-04-13 | 2017-10-19 | イーメモリー テクノロジー インコーポレイテッド | 偽装機能を有する半導体装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0369463A (ja) * | 1989-08-03 | 1991-03-25 | Kichinosuke Nagashio | 液体収納容器用キャップ |
-
1979
- 1979-05-31 JP JP6787779A patent/JPS55160462A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS582068A (ja) * | 1981-06-26 | 1983-01-07 | Toshiba Corp | 半導体装置およびその製造方法 |
| JPS5957469A (ja) * | 1982-09-28 | 1984-04-03 | Fujitsu Ltd | 半導体装置 |
| JPS6276665A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 相補型半導体装置 |
| JPS6381984A (ja) * | 1986-09-26 | 1988-04-12 | Nippon Denso Co Ltd | 多結晶半導体ダイオ−ド |
| JP2017191926A (ja) * | 2016-04-13 | 2017-10-19 | イーメモリー テクノロジー インコーポレイテッド | 偽装機能を有する半導体装置 |
| US10090260B2 (en) | 2016-04-13 | 2018-10-02 | Ememory Technology Inc. | Semiconductor apparatus with fake functionality |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS628949B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-02-25 |
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