JPS55160462A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55160462A
JPS55160462A JP6787779A JP6787779A JPS55160462A JP S55160462 A JPS55160462 A JP S55160462A JP 6787779 A JP6787779 A JP 6787779A JP 6787779 A JP6787779 A JP 6787779A JP S55160462 A JPS55160462 A JP S55160462A
Authority
JP
Japan
Prior art keywords
diode
gates
gate
semiconductor device
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6787779A
Other languages
Japanese (ja)
Other versions
JPS628949B2 (en
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6787779A priority Critical patent/JPS55160462A/en
Publication of JPS55160462A publication Critical patent/JPS55160462A/en
Publication of JPS628949B2 publication Critical patent/JPS628949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To highly integrate the semiconductor device without adversely effecting the characteristics of the device by commonly connecting gates through zener diodes formed at the connecting portions of the respective gates of a C-MOS transistor. CONSTITUTION:There is connected between the P<+> type polycrystalline Si gate 7a of a P channel MOS transistor TrQP and the N<+> type polycrystalline Si gate 7b of an N channel MOSTrQn through a zener diode ZD. That is, the connecting portions of the gates 7a, 7b are confronted to form a P<+>N<+> junction zener diode ZD, and both gates are connected through the diode ZD. In this manner, the voltage drop at the diode ZD becomes approx. 0.2V, and since this diode has a property for flowing a current also in reverse direction, it can perform substantially equal function to the connection by metal layer. The wire is also preserved in increase of the steps by employing the polycrystalline Si layer forming the gate of the TrQn so as to improve the integrating degree of the semiconductor device.
JP6787779A 1979-05-31 1979-05-31 Semiconductor device Granted JPS55160462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6787779A JPS55160462A (en) 1979-05-31 1979-05-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6787779A JPS55160462A (en) 1979-05-31 1979-05-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55160462A true JPS55160462A (en) 1980-12-13
JPS628949B2 JPS628949B2 (en) 1987-02-25

Family

ID=13357571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6787779A Granted JPS55160462A (en) 1979-05-31 1979-05-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55160462A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582068A (en) * 1981-06-26 1983-01-07 Toshiba Corp Semiconductor device and manufacture thereof
JPS5957469A (en) * 1982-09-28 1984-04-03 Fujitsu Ltd Semiconductor device
JPS6276665A (en) * 1985-09-30 1987-04-08 Toshiba Corp Complementary semiconductor device
JPS6381984A (en) * 1986-09-26 1988-04-12 Nippon Denso Co Ltd Polycrystal semiconductor diode
JP2017191926A (en) * 2016-04-13 2017-10-19 イーメモリー テクノロジー インコーポレイテッド Semiconductor apparatus with fake functionality

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0369463A (en) * 1989-08-03 1991-03-25 Kichinosuke Nagashio Cap for liquid container

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582068A (en) * 1981-06-26 1983-01-07 Toshiba Corp Semiconductor device and manufacture thereof
JPS5957469A (en) * 1982-09-28 1984-04-03 Fujitsu Ltd Semiconductor device
JPS6276665A (en) * 1985-09-30 1987-04-08 Toshiba Corp Complementary semiconductor device
JPH0322708B2 (en) * 1985-09-30 1991-03-27 Tokyo Shibaura Electric Co
JPS6381984A (en) * 1986-09-26 1988-04-12 Nippon Denso Co Ltd Polycrystal semiconductor diode
JP2017191926A (en) * 2016-04-13 2017-10-19 イーメモリー テクノロジー インコーポレイテッド Semiconductor apparatus with fake functionality
US10090260B2 (en) 2016-04-13 2018-10-02 Ememory Technology Inc. Semiconductor apparatus with fake functionality

Also Published As

Publication number Publication date
JPS628949B2 (en) 1987-02-25

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