JPS628949B2 - - Google Patents

Info

Publication number
JPS628949B2
JPS628949B2 JP54067877A JP6787779A JPS628949B2 JP S628949 B2 JPS628949 B2 JP S628949B2 JP 54067877 A JP54067877 A JP 54067877A JP 6787779 A JP6787779 A JP 6787779A JP S628949 B2 JPS628949 B2 JP S628949B2
Authority
JP
Japan
Prior art keywords
gate
type
gates
transistor
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54067877A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55160462A (en
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6787779A priority Critical patent/JPS55160462A/ja
Publication of JPS55160462A publication Critical patent/JPS55160462A/ja
Publication of JPS628949B2 publication Critical patent/JPS628949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP6787779A 1979-05-31 1979-05-31 Semiconductor device Granted JPS55160462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6787779A JPS55160462A (en) 1979-05-31 1979-05-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6787779A JPS55160462A (en) 1979-05-31 1979-05-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55160462A JPS55160462A (en) 1980-12-13
JPS628949B2 true JPS628949B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-02-25

Family

ID=13357571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6787779A Granted JPS55160462A (en) 1979-05-31 1979-05-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55160462A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0369463A (ja) * 1989-08-03 1991-03-25 Kichinosuke Nagashio 液体収納容器用キャップ

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582068A (ja) * 1981-06-26 1983-01-07 Toshiba Corp 半導体装置およびその製造方法
JPS5957469A (ja) * 1982-09-28 1984-04-03 Fujitsu Ltd 半導体装置
JPS6276665A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 相補型半導体装置
JP2667392B2 (ja) * 1986-09-26 1997-10-27 株式会社デンソー 多結晶半導体ダイオードの製造方法
US10090260B2 (en) 2016-04-13 2018-10-02 Ememory Technology Inc. Semiconductor apparatus with fake functionality

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0369463A (ja) * 1989-08-03 1991-03-25 Kichinosuke Nagashio 液体収納容器用キャップ

Also Published As

Publication number Publication date
JPS55160462A (en) 1980-12-13

Similar Documents

Publication Publication Date Title
KR0139873B1 (ko) 반도체 집적회로장치
US4139880A (en) CMOS polarity reversal circuit
JPH1070266A (ja) 半導体装置およびその製造方法
JP3353388B2 (ja) 電力用半導体装置
EP0178991B1 (en) A complementary semiconductor device having high switching speed and latchup-free capability
JPH08186180A (ja) Ｃｍｉｓ型集積回路装置及びその製造方法
US4969020A (en) Semiconductor device
JPS628949B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH04241452A (ja) 半導体集積回路装置
JPS63244874A (ja) 入力保護回路
KR100383357B1 (ko) 절연체상실리콘(soi)기판에형성된cmos인터페이스회로
JP3175758B2 (ja) 半導体装置
US5028978A (en) Complementary bipolar complementary CMOS (CBiCMOS) transmission gate
JP2956181B2 (ja) 抵抗素子を有する半導体装置
US4509070A (en) Metal-insulator-semiconductor transistor device
JPS6233752B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0532908B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR100287892B1 (ko) 반도체 메모리 소자 및 그 제조방법
JPH041509B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0639455Y2 (ja) Ｍｏｓ素子の保護回路装置
KR100244287B1 (ko) 씨모스펫
KR930008531B1 (ko) 씨모스 반전기
JPH04103128A (ja) 半導体集積回路の電源線の配線方法
JPH0243347B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS61208863A (ja) Ｃｍｏｓ半導体装置