JPS55128875A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55128875A
JPS55128875A JP3600279A JP3600279A JPS55128875A JP S55128875 A JPS55128875 A JP S55128875A JP 3600279 A JP3600279 A JP 3600279A JP 3600279 A JP3600279 A JP 3600279A JP S55128875 A JPS55128875 A JP S55128875A
Authority
JP
Japan
Prior art keywords
aluminum
oxide film
granulated
yield
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3600279A
Other languages
English (en)
Inventor
Masahide Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3600279A priority Critical patent/JPS55128875A/ja
Publication of JPS55128875A publication Critical patent/JPS55128875A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP3600279A 1979-03-27 1979-03-27 Semiconductor device Pending JPS55128875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3600279A JPS55128875A (en) 1979-03-27 1979-03-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3600279A JPS55128875A (en) 1979-03-27 1979-03-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55128875A true JPS55128875A (en) 1980-10-06

Family

ID=12457569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3600279A Pending JPS55128875A (en) 1979-03-27 1979-03-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55128875A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877261A (ja) * 1981-11-02 1983-05-10 Nec Corp 半導体装置
JPS59119868A (ja) * 1982-12-27 1984-07-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPS60200575A (ja) * 1984-03-24 1985-10-11 Oki Electric Ind Co Ltd シヨツトキ半導体装置及びその製造方法
JPH02206134A (ja) * 1989-02-06 1990-08-15 Fujitsu Ltd 半導体装置の製造方法
US5006483A (en) * 1988-03-31 1991-04-09 Sanken Electric Co., Ltd. Fabrication of P-N junction semiconductor device
US5032541A (en) * 1988-09-14 1991-07-16 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor device including a Schottky gate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877261A (ja) * 1981-11-02 1983-05-10 Nec Corp 半導体装置
JPS59119868A (ja) * 1982-12-27 1984-07-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPS60200575A (ja) * 1984-03-24 1985-10-11 Oki Electric Ind Co Ltd シヨツトキ半導体装置及びその製造方法
JPH0554269B2 (ja) * 1984-03-24 1993-08-12 Oki Electric Ind Co Ltd
US5006483A (en) * 1988-03-31 1991-04-09 Sanken Electric Co., Ltd. Fabrication of P-N junction semiconductor device
US5032541A (en) * 1988-09-14 1991-07-16 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor device including a Schottky gate
JPH02206134A (ja) * 1989-02-06 1990-08-15 Fujitsu Ltd 半導体装置の製造方法

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