JPS55128875A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55128875A JPS55128875A JP3600279A JP3600279A JPS55128875A JP S55128875 A JPS55128875 A JP S55128875A JP 3600279 A JP3600279 A JP 3600279A JP 3600279 A JP3600279 A JP 3600279A JP S55128875 A JPS55128875 A JP S55128875A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- oxide film
- granulated
- yield
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3600279A JPS55128875A (en) | 1979-03-27 | 1979-03-27 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3600279A JPS55128875A (en) | 1979-03-27 | 1979-03-27 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55128875A true JPS55128875A (en) | 1980-10-06 |
Family
ID=12457569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3600279A Pending JPS55128875A (en) | 1979-03-27 | 1979-03-27 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55128875A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5877261A (ja) * | 1981-11-02 | 1983-05-10 | Nec Corp | 半導体装置 |
JPS59119868A (ja) * | 1982-12-27 | 1984-07-11 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
JPS60200575A (ja) * | 1984-03-24 | 1985-10-11 | Oki Electric Ind Co Ltd | シヨツトキ半導体装置及びその製造方法 |
JPH02206134A (ja) * | 1989-02-06 | 1990-08-15 | Fujitsu Ltd | 半導体装置の製造方法 |
US5006483A (en) * | 1988-03-31 | 1991-04-09 | Sanken Electric Co., Ltd. | Fabrication of P-N junction semiconductor device |
US5032541A (en) * | 1988-09-14 | 1991-07-16 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a semiconductor device including a Schottky gate |
-
1979
- 1979-03-27 JP JP3600279A patent/JPS55128875A/ja active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5877261A (ja) * | 1981-11-02 | 1983-05-10 | Nec Corp | 半導体装置 |
JPS59119868A (ja) * | 1982-12-27 | 1984-07-11 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
JPS60200575A (ja) * | 1984-03-24 | 1985-10-11 | Oki Electric Ind Co Ltd | シヨツトキ半導体装置及びその製造方法 |
JPH0554269B2 (ja) * | 1984-03-24 | 1993-08-12 | Oki Electric Ind Co Ltd | |
US5006483A (en) * | 1988-03-31 | 1991-04-09 | Sanken Electric Co., Ltd. | Fabrication of P-N junction semiconductor device |
US5032541A (en) * | 1988-09-14 | 1991-07-16 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a semiconductor device including a Schottky gate |
JPH02206134A (ja) * | 1989-02-06 | 1990-08-15 | Fujitsu Ltd | 半導体装置の製造方法 |
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