JPS5561071A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5561071A JPS5561071A JP13413978A JP13413978A JPS5561071A JP S5561071 A JPS5561071 A JP S5561071A JP 13413978 A JP13413978 A JP 13413978A JP 13413978 A JP13413978 A JP 13413978A JP S5561071 A JPS5561071 A JP S5561071A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- gate
- sio
- subsequently
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent oxidation and obtain good ohmic contact, by laminating high melting point metal film and Si film and changing the surface of the Si film into SiO2 film by heat treatment, when a gate is provided on a gate oxide film formed on a semiconductor substrate.
CONSTITUTION: Thick oxide film 2 for field use is formed on both ends of Si substrate 1, and on the surface of substrate 1 surrounded by this, thin gate oxide film 2G is fitted. Next, Mo film 3, which is to become gate electrode, is provided on the entire surface by evaporation or sputtering. On top of this is placed polycrystalline Si film 4. Subsequently, by operating heat treatment in an acid atmosphere, film 4 is converted into SiO2 film 4', and at the same time, Mo.Si alloy layer is produced on the boundary between films 3 and 4'. Next, by photolithography, Mo gate electrode 3G whose surface is covered with film 4' is formed in the center of film 2G, and at the same time, wiring 3L which is also covered with film 4' is provided on film 2. Subsequently, in a usual manner, source and drain regions 5S, 5D are formed in substrate 1 surrounding electrode 3G.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13413978A JPS5561071A (en) | 1978-10-31 | 1978-10-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13413978A JPS5561071A (en) | 1978-10-31 | 1978-10-31 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5561071A true JPS5561071A (en) | 1980-05-08 |
Family
ID=15121376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13413978A Pending JPS5561071A (en) | 1978-10-31 | 1978-10-31 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5561071A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51118381A (en) * | 1975-04-10 | 1976-10-18 | Matsushita Electric Ind Co Ltd | Manufacturing process for semiconductor unit |
JPS51147273A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Manufacturing process of semiconductor device |
-
1978
- 1978-10-31 JP JP13413978A patent/JPS5561071A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51118381A (en) * | 1975-04-10 | 1976-10-18 | Matsushita Electric Ind Co Ltd | Manufacturing process for semiconductor unit |
JPS51147273A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Manufacturing process of semiconductor device |
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