JPS5561071A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5561071A
JPS5561071A JP13413978A JP13413978A JPS5561071A JP S5561071 A JPS5561071 A JP S5561071A JP 13413978 A JP13413978 A JP 13413978A JP 13413978 A JP13413978 A JP 13413978A JP S5561071 A JPS5561071 A JP S5561071A
Authority
JP
Japan
Prior art keywords
film
substrate
gate
sio
subsequently
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13413978A
Other languages
Japanese (ja)
Inventor
Yoshiiku Togei
Takashi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13413978A priority Critical patent/JPS5561071A/en
Publication of JPS5561071A publication Critical patent/JPS5561071A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent oxidation and obtain good ohmic contact, by laminating high melting point metal film and Si film and changing the surface of the Si film into SiO2 film by heat treatment, when a gate is provided on a gate oxide film formed on a semiconductor substrate.
CONSTITUTION: Thick oxide film 2 for field use is formed on both ends of Si substrate 1, and on the surface of substrate 1 surrounded by this, thin gate oxide film 2G is fitted. Next, Mo film 3, which is to become gate electrode, is provided on the entire surface by evaporation or sputtering. On top of this is placed polycrystalline Si film 4. Subsequently, by operating heat treatment in an acid atmosphere, film 4 is converted into SiO2 film 4', and at the same time, Mo.Si alloy layer is produced on the boundary between films 3 and 4'. Next, by photolithography, Mo gate electrode 3G whose surface is covered with film 4' is formed in the center of film 2G, and at the same time, wiring 3L which is also covered with film 4' is provided on film 2. Subsequently, in a usual manner, source and drain regions 5S, 5D are formed in substrate 1 surrounding electrode 3G.
COPYRIGHT: (C)1980,JPO&Japio
JP13413978A 1978-10-31 1978-10-31 Manufacture of semiconductor device Pending JPS5561071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13413978A JPS5561071A (en) 1978-10-31 1978-10-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13413978A JPS5561071A (en) 1978-10-31 1978-10-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5561071A true JPS5561071A (en) 1980-05-08

Family

ID=15121376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13413978A Pending JPS5561071A (en) 1978-10-31 1978-10-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5561071A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51118381A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manufacturing process for semiconductor unit
JPS51147273A (en) * 1975-06-13 1976-12-17 Fujitsu Ltd Manufacturing process of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51118381A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manufacturing process for semiconductor unit
JPS51147273A (en) * 1975-06-13 1976-12-17 Fujitsu Ltd Manufacturing process of semiconductor device

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