JPS55118666A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55118666A JPS55118666A JP2545179A JP2545179A JPS55118666A JP S55118666 A JPS55118666 A JP S55118666A JP 2545179 A JP2545179 A JP 2545179A JP 2545179 A JP2545179 A JP 2545179A JP S55118666 A JPS55118666 A JP S55118666A
- Authority
- JP
- Japan
- Prior art keywords
- reduce
- semiconductor device
- capacity
- power consumption
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000000295 complement effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Static Random-Access Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2545179A JPS55118666A (en) | 1979-03-05 | 1979-03-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2545179A JPS55118666A (en) | 1979-03-05 | 1979-03-05 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55118666A true JPS55118666A (en) | 1980-09-11 |
JPS6353701B2 JPS6353701B2 (ja) | 1988-10-25 |
Family
ID=12166376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2545179A Granted JPS55118666A (en) | 1979-03-05 | 1979-03-05 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55118666A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57188863A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Field effect type semiconductor device |
JPS5922359A (ja) * | 1982-07-29 | 1984-02-04 | Nec Corp | 集積化半導体記憶装置 |
JPS6124090A (ja) * | 1984-07-12 | 1986-02-01 | Nec Corp | スタンバイ機能を有するcmosマイクロコンピュ−タ |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5432082A (en) * | 1977-08-17 | 1979-03-09 | Hitachi Ltd | Semiconductor device |
-
1979
- 1979-03-05 JP JP2545179A patent/JPS55118666A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5432082A (en) * | 1977-08-17 | 1979-03-09 | Hitachi Ltd | Semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57188863A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Field effect type semiconductor device |
JPS5922359A (ja) * | 1982-07-29 | 1984-02-04 | Nec Corp | 集積化半導体記憶装置 |
JPS6124090A (ja) * | 1984-07-12 | 1986-02-01 | Nec Corp | スタンバイ機能を有するcmosマイクロコンピュ−タ |
JPH0412555B2 (ja) * | 1984-07-12 | 1992-03-04 | Nippon Electric Co |
Also Published As
Publication number | Publication date |
---|---|
JPS6353701B2 (ja) | 1988-10-25 |
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