JPS55107780A - Etching method - Google Patents

Etching method

Info

Publication number
JPS55107780A
JPS55107780A JP1225079A JP1225079A JPS55107780A JP S55107780 A JPS55107780 A JP S55107780A JP 1225079 A JP1225079 A JP 1225079A JP 1225079 A JP1225079 A JP 1225079A JP S55107780 A JPS55107780 A JP S55107780A
Authority
JP
Japan
Prior art keywords
etching
gas
pcl
silicon
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1225079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5637306B2 (xx
Inventor
Tokuo Kure
Shinya Iida
Michiyoshi Maki
Tatsumi Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1225079A priority Critical patent/JPS55107780A/ja
Publication of JPS55107780A publication Critical patent/JPS55107780A/ja
Publication of JPS5637306B2 publication Critical patent/JPS5637306B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP1225079A 1979-02-07 1979-02-07 Etching method Granted JPS55107780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1225079A JPS55107780A (en) 1979-02-07 1979-02-07 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1225079A JPS55107780A (en) 1979-02-07 1979-02-07 Etching method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP7289983A Division JPS58194341A (ja) 1983-04-27 1983-04-27 エツチング方法

Publications (2)

Publication Number Publication Date
JPS55107780A true JPS55107780A (en) 1980-08-19
JPS5637306B2 JPS5637306B2 (xx) 1981-08-29

Family

ID=11800110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1225079A Granted JPS55107780A (en) 1979-02-07 1979-02-07 Etching method

Country Status (1)

Country Link
JP (1) JPS55107780A (xx)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990011614A1 (fr) * 1989-03-24 1990-10-04 Hitachi, Ltd. Procede d'exposition a un faisceau charge, installation relative, diaphragme d'ouverture et procede de production de celui-ci
US5334845A (en) * 1989-03-24 1994-08-02 Hitachi Limited Charged beam exposure method and apparatus as well as aperture stop and production method thereof
JPH07169756A (ja) * 1994-11-07 1995-07-04 Semiconductor Energy Lab Co Ltd プラズマエッチング方法
JPH08306675A (ja) * 1996-05-13 1996-11-22 Semiconductor Energy Lab Co Ltd プラズマエッチング方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102553393B1 (ko) * 2019-11-06 2023-07-07 한국자동차연구원 에너지 회생 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
JPS529648A (en) * 1975-07-09 1977-01-25 Ibm Method of selectively ionnetching silicon
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching
JPS53135843A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Etching process for al and al alloy
JPS541245A (en) * 1977-06-06 1979-01-08 Hitachi Ltd Method of etching a1 and a1-based alloy

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
JPS529648A (en) * 1975-07-09 1977-01-25 Ibm Method of selectively ionnetching silicon
JPS53135843A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Etching process for al and al alloy
JPS541245A (en) * 1977-06-06 1979-01-08 Hitachi Ltd Method of etching a1 and a1-based alloy
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990011614A1 (fr) * 1989-03-24 1990-10-04 Hitachi, Ltd. Procede d'exposition a un faisceau charge, installation relative, diaphragme d'ouverture et procede de production de celui-ci
US5334845A (en) * 1989-03-24 1994-08-02 Hitachi Limited Charged beam exposure method and apparatus as well as aperture stop and production method thereof
JPH07169756A (ja) * 1994-11-07 1995-07-04 Semiconductor Energy Lab Co Ltd プラズマエッチング方法
JPH08306675A (ja) * 1996-05-13 1996-11-22 Semiconductor Energy Lab Co Ltd プラズマエッチング方法

Also Published As

Publication number Publication date
JPS5637306B2 (xx) 1981-08-29

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