Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
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Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP51089903ApriorityCriticalpatent/JPS5947479B2/en
Publication of JPS5315590ApublicationCriticalpatent/JPS5315590A/en
Publication of JPS5947479B2publicationCriticalpatent/JPS5947479B2/en
PURPOSE: To perform the working or cutting of single crystal of lithium tantalate, etc. in good yields without difficulty, by previously etching and removing a surface layer having a density of the defect.
COPYRIGHT: (C)1978,JPO&Japio
JP51089903A1976-07-281976-07-28
Ferroelectric material single crystal processing method
ExpiredJPS5947479B2
(en)