JPS5498189A - Method of fabricating solar battery having shallow deep composite junction unit - Google Patents

Method of fabricating solar battery having shallow deep composite junction unit

Info

Publication number
JPS5498189A
JPS5498189A JP16451378A JP16451378A JPS5498189A JP S5498189 A JPS5498189 A JP S5498189A JP 16451378 A JP16451378 A JP 16451378A JP 16451378 A JP16451378 A JP 16451378A JP S5498189 A JPS5498189 A JP S5498189A
Authority
JP
Japan
Prior art keywords
solar battery
shallow
junction unit
composite junction
fabricating solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16451378A
Other languages
English (en)
Japanese (ja)
Inventor
Gonshioroosukii Ronarudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott Solar CSP Inc
Original Assignee
Mobil Tyco Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Tyco Solar Energy Corp filed Critical Mobil Tyco Solar Energy Corp
Publication of JPS5498189A publication Critical patent/JPS5498189A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10P32/12—
    • H10P32/141—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/033—Diffusion of aluminum
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/153—Solar cells-implantations-laser beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP16451378A 1977-12-30 1978-12-29 Method of fabricating solar battery having shallow deep composite junction unit Pending JPS5498189A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/865,953 US4152824A (en) 1977-12-30 1977-12-30 Manufacture of solar cells

Publications (1)

Publication Number Publication Date
JPS5498189A true JPS5498189A (en) 1979-08-02

Family

ID=25346596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16451378A Pending JPS5498189A (en) 1977-12-30 1978-12-29 Method of fabricating solar battery having shallow deep composite junction unit

Country Status (10)

Country Link
US (1) US4152824A (enExample)
JP (1) JPS5498189A (enExample)
AU (1) AU521800B2 (enExample)
CA (1) CA1114050A (enExample)
DE (1) DE2856797A1 (enExample)
FR (1) FR2413791A1 (enExample)
GB (1) GB2012107B (enExample)
IL (1) IL55866A (enExample)
IN (1) IN150245B (enExample)
NL (1) NL7812620A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927579A (ja) * 1982-08-04 1984-02-14 Hoxan Corp 太陽電池の製造方法
JPS6445176A (en) * 1987-08-14 1989-02-17 Hitachi Ltd Manufacture of solar cell element
JPH04354165A (ja) * 1991-05-31 1992-12-08 Hitachi Ltd 太陽電池の製造方法
JP2010056241A (ja) * 2008-08-27 2010-03-11 Mitsubishi Electric Corp 光起電力装置及びその製造方法
JP2011519477A (ja) * 2008-04-14 2011-07-07 ゲブリューダー シュミット ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板
JP2012532474A (ja) * 2009-07-02 2012-12-13 イノヴァライト インコーポレイテッド 一連のドーパント拡散プロファイルをその場で制御するためのシリコンナノ粒子流体の使用方法
JP2018045236A (ja) * 2016-09-08 2018-03-22 グッドリッチ コーポレイション 導電性光半導体コーティングの装置及び方法
JP2018049265A (ja) * 2016-09-08 2018-03-29 グッドリッチ コーポレイション 導電性光半導体コーティングの装置及び方法
JP2019024107A (ja) * 2011-12-21 2019-02-14 サンパワー コーポレイション 太陽電池を製造する方法および太陽電池

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198262A (en) * 1979-03-29 1980-04-15 Atlantic Richfield Company Solar cell manufacture
EP0018744B1 (en) * 1979-05-01 1984-07-18 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Radiation detectors
US4255212A (en) * 1979-07-02 1981-03-10 The Regents Of The University Of California Method of fabricating photovoltaic cells
US4321283A (en) * 1979-10-26 1982-03-23 Mobil Tyco Solar Energy Corporation Nickel plating method
GB2130793B (en) * 1982-11-22 1986-09-03 Gen Electric Co Plc Forming a doped region in a semiconductor body
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells
GB2160360B (en) * 1983-12-19 1987-09-16 Mobil Solar Energy Corp Method of fabricating solar cells
GB2162996B (en) * 1983-12-19 1987-08-12 Mobil Solar Energy Corp Method of fabricating solar cells
US4650695A (en) * 1985-05-13 1987-03-17 Mobil Solar Energy Corporation Method of fabricating solar cells
JPS6215864A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法
US4818337A (en) * 1986-04-11 1989-04-04 University Of Delaware Thin active-layer solar cell with multiple internal reflections
US5075259A (en) * 1989-08-22 1991-12-24 Motorola, Inc. Method for forming semiconductor contacts by electroless plating
US5110369A (en) * 1990-10-24 1992-05-05 Mobil Solar Energy Corporation Cable interconnections for solar cell modules
US5225372A (en) * 1990-12-24 1993-07-06 Motorola, Inc. Method of making a semiconductor device having an improved metallization structure
US5112409A (en) * 1991-01-23 1992-05-12 Solarex Corporation Solar cells with reduced recombination under grid lines, and method of manufacturing same
US5424570A (en) * 1992-01-31 1995-06-13 Sgs-Thomson Microelectronics, Inc. Contact structure for improving photoresist adhesion on a dielectric layer
US5270248A (en) * 1992-08-07 1993-12-14 Mobil Solar Energy Corporation Method for forming diffusion junctions in solar cell substrates
US6153501A (en) 1998-05-19 2000-11-28 Micron Technology, Inc. Method of reducing overetch during the formation of a semiconductor device
US5498570A (en) * 1994-09-15 1996-03-12 Micron Technology Inc. Method of reducing overetch during the formation of a semiconductor device
DE19522539C2 (de) * 1995-06-21 1997-06-12 Fraunhofer Ges Forschung Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben
US5716873A (en) * 1996-05-06 1998-02-10 Micro Technology, Inc. Method for cleaning waste matter from the backside of a semiconductor wafer substrate
US6051501A (en) * 1996-10-09 2000-04-18 Micron Technology, Inc. Method of reducing overetch during the formation of a semiconductor device
US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
EP0851511A1 (en) * 1996-12-24 1998-07-01 IMEC vzw Semiconductor device with two selectively diffused regions
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
NL1012961C2 (nl) * 1999-09-02 2001-03-05 Stichting Energie Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
DE10021440A1 (de) * 2000-05-03 2001-11-15 Univ Konstanz Verfahren zur Herstellung einer Solarzelle und nach diesem Verfahren hergestellte Solarzelle
WO2002019390A2 (en) * 2000-08-31 2002-03-07 Chemtrace, Inc. Cleaning of semiconductor process equipment chamber parts using organic solvents
US20040005468A1 (en) * 2002-07-03 2004-01-08 Steinecker Carl P. Method of providing a metallic contact on a silicon solar cell
US7170001B2 (en) * 2003-06-26 2007-01-30 Advent Solar, Inc. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias
US7649141B2 (en) * 2003-06-30 2010-01-19 Advent Solar, Inc. Emitter wrap-through back contact solar cells on thin silicon wafers
JP4232597B2 (ja) * 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
US8502064B2 (en) * 2003-12-11 2013-08-06 Philip Morris Usa Inc. Hybrid system for generating power
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
US7144751B2 (en) * 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
US7335555B2 (en) * 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
US7790574B2 (en) * 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
JP4481869B2 (ja) * 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
DE102006003283A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen
DE602006002249D1 (de) * 2006-04-04 2008-09-25 Solarworld Ind Deutschland Gmb Verfahren zur Dotierung mit Hilfe von Diffusion, Oberflächenoxidation und Rückätzung sowie Verfahren zur Herstellung von Solarzellen
JP2008066437A (ja) * 2006-09-06 2008-03-21 Mitsubishi Heavy Ind Ltd 太陽電池パネルの製造方法
CA2568136C (en) * 2006-11-30 2008-07-29 Tenxc Wireless Inc. Butler matrix implementation
EP2100336A4 (en) * 2006-12-22 2013-04-10 Applied Materials Inc CONNECTING TECHNOLOGIES FOR REVERSE SOLAR CELLS AND MODULES
GB2449504A (en) * 2007-05-25 2008-11-26 Renewable Energy Corp Asa Photovoltaic module with reflective V-grooves
US20100047954A1 (en) * 2007-08-31 2010-02-25 Su Tzay-Fa Jeff Photovoltaic production line
US8225496B2 (en) * 2007-08-31 2012-07-24 Applied Materials, Inc. Automated integrated solar cell production line composed of a plurality of automated modules and tools including an autoclave for curing solar devices that have been laminated
DE102007051725B4 (de) * 2007-10-27 2014-10-30 Centrotherm Photovoltaics Ag Verfahren zur Kontaktierung von Solarzellen
WO2009064870A2 (en) * 2007-11-13 2009-05-22 Advent Solar, Inc. Selective emitter and texture processes for back contact solar cells
US7888168B2 (en) * 2007-11-19 2011-02-15 Applied Materials, Inc. Solar cell contact formation process using a patterned etchant material
US20090139568A1 (en) * 2007-11-19 2009-06-04 Applied Materials, Inc. Crystalline Solar Cell Metallization Methods
US20090188603A1 (en) * 2008-01-25 2009-07-30 Applied Materials, Inc. Method and apparatus for controlling laminator temperature on a solar cell
DE102008017647A1 (de) * 2008-04-04 2009-10-29 Centrotherm Photovoltaics Technology Gmbh Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung
US20100012172A1 (en) * 2008-04-29 2010-01-21 Advent Solar, Inc. Photovoltaic Modules Manufactured Using Monolithic Module Assembly Techniques
US20100116329A1 (en) * 2008-06-09 2010-05-13 Fitzgerald Eugene A Methods of forming high-efficiency solar cell structures
WO2009152365A1 (en) 2008-06-11 2009-12-17 Solar Implant Technologies Inc. Solar cell fabrication with faceting and ion implantation
WO2010009295A2 (en) 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask
CN102132422A (zh) * 2008-08-27 2011-07-20 应用材料股份有限公司 利用印刷介电阻障的背接触太阳能电池
TWI371115B (en) * 2008-09-16 2012-08-21 Gintech Energy Corp One-step diffusion method for fabricating a differential doped solar cell
DE102009008786A1 (de) * 2008-10-31 2010-06-10 Bosch Solar Energy Ag Verfahren zur Herstellung einer Solarzelle und Solarzelle
DE102008056456A1 (de) * 2008-11-07 2010-06-17 Centrotherm Photovoltaics Technology Gmbh Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung
JP2012521642A (ja) * 2009-03-20 2012-09-13 インテバック・インコーポレイテッド 太陽電池及びその製造方法
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
DE102009034087A1 (de) * 2009-07-21 2011-01-27 Solsol Gmbh Verfahren zur Herstellung eines selektiven Solarzellenemitters
US8574950B2 (en) * 2009-10-30 2013-11-05 International Business Machines Corporation Electrically contactable grids manufacture
US8796060B2 (en) 2009-11-18 2014-08-05 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US20110114147A1 (en) * 2009-11-18 2011-05-19 Solar Wind Ltd. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8586862B2 (en) * 2009-11-18 2013-11-19 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
DE102009058786A1 (de) * 2009-12-18 2011-06-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 Verfahren zur Herstellung lokal strukturierter Halbleiterschichten
US20110162701A1 (en) * 2010-01-03 2011-07-07 Claudio Truzzi Photovoltaic Cells
FR2959351B1 (fr) * 2010-04-26 2013-11-08 Photowatt Int Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium
DE102010016992B4 (de) * 2010-05-18 2015-07-23 Hanwha Q.CELLS GmbH Herstellungsverfahren einer Halbleitervorrichtung
EP2398061B1 (en) * 2010-06-21 2020-04-29 Lg Electronics Inc. Solar cell
WO2012030407A1 (en) * 2010-09-03 2012-03-08 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
US8969122B2 (en) * 2011-06-14 2015-03-03 International Business Machines Corporation Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom
KR20140110851A (ko) 2011-11-08 2014-09-17 인테벡, 인코포레이티드 기판 프로세싱 시스템 및 방법
US8597970B2 (en) 2011-12-21 2013-12-03 Sunpower Corporation Hybrid polysilicon heterojunction back contact cell
US8679889B2 (en) * 2011-12-21 2014-03-25 Sunpower Corporation Hybrid polysilicon heterojunction back contact cell
CN104011882A (zh) 2012-01-12 2014-08-27 应用材料公司 制造太阳能电池装置的方法
DE102012200559A1 (de) * 2012-01-16 2013-07-18 Deutsche Cell Gmbh Verfahren zur Herstellung eines Emitters einer Solarzelle und Solarzelle
WO2013147202A1 (ja) * 2012-03-30 2013-10-03 帝人株式会社 半導体積層体及びその製造方法、半導体デバイスの製造方法、半導体デバイス、ドーパント組成物、ドーパント注入層、並びにドープ層の形成方法
KR20140011462A (ko) * 2012-07-18 2014-01-28 엘지전자 주식회사 태양 전지 및 이의 제조 방법
BR102012030606B1 (pt) * 2012-11-30 2021-02-09 União Brasileira De Educação E Assistência - Mantenedora Da Puc Rs processo de difusão de dopantes em lâminas de silício para a fabricação de células solares
TWI570745B (zh) 2012-12-19 2017-02-11 因特瓦克公司 用於電漿離子植入之柵極
FR3002545B1 (fr) * 2013-02-22 2016-01-08 Alchimer Procede de formation d'un siliciure metallique a l'aide d'une solution contenant des ions or et des ions fluor
US9455368B2 (en) * 2014-07-03 2016-09-27 Varian Semiconductor Equipment Associates, Inc. Method of forming an interdigitated back contact solar cell
WO2016111132A1 (ja) * 2015-01-07 2016-07-14 三菱電機株式会社 太陽電池の製造方法
FR3035741B1 (fr) * 2015-04-28 2018-03-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'une cellule photovoltaique.
FR3035740B1 (fr) * 2015-04-28 2017-05-12 Commissariat Energie Atomique Procede de fabrication d'une cellule photovoltaique.
US9673341B2 (en) 2015-05-08 2017-06-06 Tetrasun, Inc. Photovoltaic devices with fine-line metallization and methods for manufacture
CN114583012B (zh) * 2022-03-07 2026-01-30 通威太阳能（成都）有限公司 一种金属电极、晶硅太阳电池及制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492167A (en) * 1966-08-26 1970-01-27 Matsushita Electric Industrial Co Ltd Photovoltaic cell and method of making the same
US3841928A (en) * 1969-06-06 1974-10-15 I Miwa Production of semiconductor photoelectric conversion target
DE2007685A1 (de) * 1970-02-19 1971-09-09 Siemens Ag Verfahren zum Herstellen von diffun dierten Halbleiterbauelementen unter Ver Wendung von festen DotierstofTquellen
BE789331A (fr) 1971-09-28 1973-01-15 Communications Satellite Corp Cellule solaire a geometrie fine
FR2238251B1 (enExample) * 1973-07-03 1977-09-16 Telecommunications Sa
FR2246066B1 (enExample) * 1973-09-17 1976-12-31 Ibm
JPS5165774U (enExample) * 1974-11-20 1976-05-24
US4070689A (en) * 1975-12-31 1978-01-24 Motorola Inc. Semiconductor solar energy device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927579A (ja) * 1982-08-04 1984-02-14 Hoxan Corp 太陽電池の製造方法
JPS6445176A (en) * 1987-08-14 1989-02-17 Hitachi Ltd Manufacture of solar cell element
JPH04354165A (ja) * 1991-05-31 1992-12-08 Hitachi Ltd 太陽電池の製造方法
JP2011519477A (ja) * 2008-04-14 2011-07-07 ゲブリューダー シュミット ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板
JP2010056241A (ja) * 2008-08-27 2010-03-11 Mitsubishi Electric Corp 光起電力装置及びその製造方法
JP2012532474A (ja) * 2009-07-02 2012-12-13 イノヴァライト インコーポレイテッド 一連のドーパント拡散プロファイルをその場で制御するためのシリコンナノ粒子流体の使用方法
JP2019024107A (ja) * 2011-12-21 2019-02-14 サンパワー コーポレイション 太陽電池を製造する方法および太陽電池
JP2018045236A (ja) * 2016-09-08 2018-03-22 グッドリッチ コーポレイション 導電性光半導体コーティングの装置及び方法
JP2018049265A (ja) * 2016-09-08 2018-03-29 グッドリッチ コーポレイション 導電性光半導体コーティングの装置及び方法
JP2023029334A (ja) * 2016-09-08 2023-03-03 グッドリッチ コーポレイション 導電性光半導体コーティングの装置及び方法
JP2025015823A (ja) * 2016-09-08 2025-01-30 グッドリッチ コーポレイション 導電性光半導体コーティングの装置及び方法
US12399430B2 (en) 2016-09-08 2025-08-26 Danbury Mission Technologies, Llc Apparatus and methods of electrically conductive optical semiconductor coating

Also Published As

Publication number Publication date
GB2012107B (en) 1982-05-12
GB2012107A (en) 1979-07-18
DE2856797A1 (de) 1979-07-12
AU4133678A (en) 1979-07-05
NL7812620A (nl) 1979-07-03
FR2413791B1 (enExample) 1984-12-14
IN150245B (enExample) 1982-08-21
IL55866A (en) 1981-09-13
CA1114050A (en) 1981-12-08
US4152824A (en) 1979-05-08
IL55866A0 (en) 1979-01-31
FR2413791A1 (fr) 1979-07-27
AU521800B2 (en) 1982-04-29

Similar Documents

Publication Publication Date Title
JPS5498189A (en) Method of fabricating solar battery having shallow deep composite junction unit
ES458576A1 (es) Dispositivo para la transformacion de energia luminica en e-nergia electrica.
AT373061B (de) Sonnenenergiekollektor-gehaeuse
ES497106A0 (es) Un modulo mejorado de pila solar
IT8020972A0 (it) Cella solare avente contatti e rivestimento antiriflettente eprocedimento per la sua formazione.
NL7708507A (nl) Zonnecollector met een geevacueerde afdekking.
SE8105279L (sv) Fotokensligt amorft flercellsdon
JPS55121685A (en) Manufacture of photovoltaic device
JPS5688377A (en) Solar battery and manufacture thereof
SE422783B (sv) Solenergikollektor samt forfarande for dess framstellning
AU521068B2 (en) Fabricating conducting oxide-silicon solar cells
JPS55111180A (en) Thin-film solar battery of high output voltage
ES476369A1 (es) Colector solar para viviendas.
JPS56114384A (en) Solar battery
JPS56142679A (en) Photoelectric converter
JPS54101687A (en) Solar battery unit
JPS5681982A (en) Power phototransistor
JPS5436126A (en) Solidstate pick up device
JPS531041A (en) Thin film optical switch array
JPS57138184A (en) Solar cell device
JPS55141766A (en) Manufacturing of semiconductor light position detector
JPS5333664A (en) Solar battery watch
JPS5342748A (en) Photo semiconductor device
JPS51145288A (en) Solar cell
JPS5390781A (en) Semiconductor radiation detector