JPS55123178A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS55123178A
JPS55123178A JP3130679A JP3130679A JPS55123178A JP S55123178 A JPS55123178 A JP S55123178A JP 3130679 A JP3130679 A JP 3130679A JP 3130679 A JP3130679 A JP 3130679A JP S55123178 A JPS55123178 A JP S55123178A
Authority
JP
Japan
Prior art keywords
case
film
electrodes
light
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3130679A
Other languages
Japanese (ja)
Inventor
Terutoyo Imai
Masakazu Umetani
Yukinori Kuwano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP3130679A priority Critical patent/JPS55123178A/en
Priority to US06/116,402 priority patent/US4281208A/en
Publication of JPS55123178A publication Critical patent/JPS55123178A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To increase mechanical strength and at the same time to protect the device completely from the outside by doubly sealing the power generation unit by means of resin and a case, in a solar cell in which a film-form power generation unit is provided on one side of a light-transmitting substrate. CONSTITUTION:On one surface of light-transmitting insulator surface of glass, No.1 electrodes 2a, 2b, 2c of tin oxide, indium oxide, or insium oxide-tin are fitted at fixed intervals. On top of this, non-crystalline Si layers 3a, 3b, 3c, consisting of a p-type layer, a non-dope layer and an n-type layer and having the function of pin junction are grown. Subsequently, on top of this and corresponding to the positions of No.1 electrodes, No.2 electrodes 4a, 4b, 4c of Al or Cr are provided. The entire surface is enclosed by insulating film 5 of SiO2, and the other surface of substrate 1 is exposed and made as a light receiving surface. Under the condition where projection 8 provided in case 6 is pressed against film 5 from the side of film 5, case 6 of Al is fitted in. Next, the space inside case 6 is filled in with insulating expoxy resin 7.
JP3130679A 1979-02-09 1979-03-16 Solar cell Pending JPS55123178A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3130679A JPS55123178A (en) 1979-03-16 1979-03-16 Solar cell
US06/116,402 US4281208A (en) 1979-02-09 1980-01-29 Photovoltaic device and method of manufacturing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3130679A JPS55123178A (en) 1979-03-16 1979-03-16 Solar cell

Publications (1)

Publication Number Publication Date
JPS55123178A true JPS55123178A (en) 1980-09-22

Family

ID=12327600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3130679A Pending JPS55123178A (en) 1979-02-09 1979-03-16 Solar cell

Country Status (1)

Country Link
JP (1) JPS55123178A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5858777A (en) * 1981-10-05 1983-04-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor element
US4578526A (en) * 1983-08-01 1986-03-25 Matsushita Electric Industrial Co., Ltd. Solar module
JPS62169372A (en) * 1987-01-09 1987-07-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5858777A (en) * 1981-10-05 1983-04-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor element
JPS6249753B2 (en) * 1981-10-05 1987-10-21 Matsushita Electric Ind Co Ltd
US4578526A (en) * 1983-08-01 1986-03-25 Matsushita Electric Industrial Co., Ltd. Solar module
JPS62169372A (en) * 1987-01-09 1987-07-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor element

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