JPS5453863A - Forming method of insulation films - Google Patents

Forming method of insulation films

Info

Publication number
JPS5453863A
JPS5453863A JP12034877A JP12034877A JPS5453863A JP S5453863 A JPS5453863 A JP S5453863A JP 12034877 A JP12034877 A JP 12034877A JP 12034877 A JP12034877 A JP 12034877A JP S5453863 A JPS5453863 A JP S5453863A
Authority
JP
Japan
Prior art keywords
film
hole
substrate
coated
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12034877A
Other languages
Japanese (ja)
Other versions
JPS6126217B2 (en
Inventor
Hisashi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP12034877A priority Critical patent/JPS5453863A/en
Publication of JPS5453863A publication Critical patent/JPS5453863A/en
Publication of JPS6126217B2 publication Critical patent/JPS6126217B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To delay the rate of etching on the exposed face side and increase the grade of the holes to be etched by heating the film from the exposed side while cooling the non-exposed face side at the time of heat-setting the high polymer resin film such as of polyimide film coated for the purpose of forming the insulation film.
CONSTITUTION: After a SiO2 film 2 is deposited on a Si substrate 1, specified Al films 3 are formed in specific regions, thence a polymide intermediate film 4 is spin-coated over the entire surface. Next, the substrate 1 with the film 4 being faced upward is secured, by using a conductive adhesive agent 13, onto the copper-made cooling plate 10 which is provided with a through-hole 11 for passing cooling water in the portion close to the top thereof. Thereafter, while water 12 is being flown in the through-hole 11, the film 4 is radiated with the infrared lamp disposed above the substrate 1, whereby it is turned to the film 4' in which setting has progressed more in the upper part. After these, a photo resist film 5 is coated on the film 4', and a hole 6 is opened therein. When the film is then etched with a solution of hydrazine and ehtylene diamine, the hole 7 porduced assumes inverted truncated cone form of a sharp grade
COPYRIGHT: (C)1979,JPO&Japio
JP12034877A 1977-10-05 1977-10-05 Forming method of insulation films Granted JPS5453863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12034877A JPS5453863A (en) 1977-10-05 1977-10-05 Forming method of insulation films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12034877A JPS5453863A (en) 1977-10-05 1977-10-05 Forming method of insulation films

Publications (2)

Publication Number Publication Date
JPS5453863A true JPS5453863A (en) 1979-04-27
JPS6126217B2 JPS6126217B2 (en) 1986-06-19

Family

ID=14784001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12034877A Granted JPS5453863A (en) 1977-10-05 1977-10-05 Forming method of insulation films

Country Status (1)

Country Link
JP (1) JPS5453863A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831558A (en) * 1981-08-18 1983-02-24 Fujitsu Ltd Manufacture of semiconductor device
JPS616843A (en) * 1984-06-20 1986-01-13 Sanyo Electric Co Ltd Formation of contact hole in semiconductor device
JPS6248044A (en) * 1985-08-28 1987-03-02 Oki Electric Ind Co Ltd Multilayer interconnection forming method
JPH04229627A (en) * 1990-04-27 1992-08-19 Hughes Aircraft Co Electric relay section structure and formation method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831558A (en) * 1981-08-18 1983-02-24 Fujitsu Ltd Manufacture of semiconductor device
JPS616843A (en) * 1984-06-20 1986-01-13 Sanyo Electric Co Ltd Formation of contact hole in semiconductor device
JPS6248044A (en) * 1985-08-28 1987-03-02 Oki Electric Ind Co Ltd Multilayer interconnection forming method
JPH04229627A (en) * 1990-04-27 1992-08-19 Hughes Aircraft Co Electric relay section structure and formation method

Also Published As

Publication number Publication date
JPS6126217B2 (en) 1986-06-19

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