JPS56142653A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56142653A
JPS56142653A JP4646880A JP4646880A JPS56142653A JP S56142653 A JPS56142653 A JP S56142653A JP 4646880 A JP4646880 A JP 4646880A JP 4646880 A JP4646880 A JP 4646880A JP S56142653 A JPS56142653 A JP S56142653A
Authority
JP
Japan
Prior art keywords
layer
psg
electrode window
thin
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4646880A
Other languages
Japanese (ja)
Inventor
Atsushi Nakano
Shinpei Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4646880A priority Critical patent/JPS56142653A/en
Publication of JPS56142653A publication Critical patent/JPS56142653A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the disconnection of a metallic wiring layer formed on a substrate by coating a thin PSG layer all over a thick PSG layer opened with an electrode window or the like, then heating the substrate to melt and deform the electrode window edge of the PSG layer and forming a slight slope at the edge. CONSTITUTION:After a thick a phosphosilicate glass (PSG) layer 2 is formed on an Si substrate 1, with a photoresist layer 8 as a mask an electrode window 9 and a dicing line 10 are formed by dry etching, the layer 8 is then removed, and a thin PSG layer 11 is covered on the entire surface. Then, the substrate is heated to melt the thick and thin PSG layers, and the layers are then cooled to be solidified. The molten thick PSG layer is integrated with the thin PSG layer, and the edge of the electrode window becomes a low gradient. The thin PSG layer is removed, and a desired metallic wiring layer is formed. Thus, the disconnection of the metallic wiring layer can be prevented at the upper edge of the electrode window to improve the reliability of a high density semiconductor device such as an LSI or the like.
JP4646880A 1980-04-09 1980-04-09 Manufacture of semiconductor device Pending JPS56142653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4646880A JPS56142653A (en) 1980-04-09 1980-04-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4646880A JPS56142653A (en) 1980-04-09 1980-04-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56142653A true JPS56142653A (en) 1981-11-07

Family

ID=12747997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4646880A Pending JPS56142653A (en) 1980-04-09 1980-04-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56142653A (en)

Similar Documents

Publication Publication Date Title
JPS5621332A (en) Manufacture of semiconductor device
JPS56142653A (en) Manufacture of semiconductor device
JPS56125855A (en) Manufacture of semiconductor device
JPS57155764A (en) Manufacture of semiconductor device
JPS5513904A (en) Semiconductor device and its manufacturing method
JPS56125856A (en) Manufacture of semiconductor device
JPS57102053A (en) Semiconductor device
JPS5766651A (en) Manufacture of semiconductor device
JPS5522865A (en) Manufacturing methof of semiconductor device
JPS5289468A (en) Semiconductor device
JPS5715423A (en) Manufacture of semiconductor device
JPS5720374A (en) Method of forming crossover in thermal head
JPS5792849A (en) Manufacture of semiconductor device
JPS54133088A (en) Semiconductor device
JPS56118354A (en) Preparation of semiconductor device
JPS54162463A (en) Semiconductor device and its manufacture
JPS56155552A (en) Manufacture of semiconductor device
JPS57206071A (en) Semiconductor device and manufacture thereof
JPS5519880A (en) Manufacturing method of semiconductor device
JPS54156476A (en) Manufacture for semiconductor device
JPS54102983A (en) Manufacture of semiconductor device
JPS5455375A (en) Production of semiconductor device
JPS5687346A (en) Manufacture of semiconductor device
JPS57102051A (en) Manufacture of semiconductor device
JPS57113217A (en) Manufacture of semiconductor device