JPS56142653A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56142653A JPS56142653A JP4646880A JP4646880A JPS56142653A JP S56142653 A JPS56142653 A JP S56142653A JP 4646880 A JP4646880 A JP 4646880A JP 4646880 A JP4646880 A JP 4646880A JP S56142653 A JPS56142653 A JP S56142653A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- psg
- electrode window
- thin
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the disconnection of a metallic wiring layer formed on a substrate by coating a thin PSG layer all over a thick PSG layer opened with an electrode window or the like, then heating the substrate to melt and deform the electrode window edge of the PSG layer and forming a slight slope at the edge. CONSTITUTION:After a thick a phosphosilicate glass (PSG) layer 2 is formed on an Si substrate 1, with a photoresist layer 8 as a mask an electrode window 9 and a dicing line 10 are formed by dry etching, the layer 8 is then removed, and a thin PSG layer 11 is covered on the entire surface. Then, the substrate is heated to melt the thick and thin PSG layers, and the layers are then cooled to be solidified. The molten thick PSG layer is integrated with the thin PSG layer, and the edge of the electrode window becomes a low gradient. The thin PSG layer is removed, and a desired metallic wiring layer is formed. Thus, the disconnection of the metallic wiring layer can be prevented at the upper edge of the electrode window to improve the reliability of a high density semiconductor device such as an LSI or the like.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4646880A JPS56142653A (en) | 1980-04-09 | 1980-04-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4646880A JPS56142653A (en) | 1980-04-09 | 1980-04-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56142653A true JPS56142653A (en) | 1981-11-07 |
Family
ID=12747997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4646880A Pending JPS56142653A (en) | 1980-04-09 | 1980-04-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56142653A (en) |
-
1980
- 1980-04-09 JP JP4646880A patent/JPS56142653A/en active Pending
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