JPS6446748A - Method for applying and forming chloromethylated polystyrene resist - Google Patents

Method for applying and forming chloromethylated polystyrene resist

Info

Publication number
JPS6446748A
JPS6446748A JP20303087A JP20303087A JPS6446748A JP S6446748 A JPS6446748 A JP S6446748A JP 20303087 A JP20303087 A JP 20303087A JP 20303087 A JP20303087 A JP 20303087A JP S6446748 A JPS6446748 A JP S6446748A
Authority
JP
Japan
Prior art keywords
layer
solution
applying
cms
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20303087A
Other languages
Japanese (ja)
Inventor
Kenji Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20303087A priority Critical patent/JPS6446748A/en
Publication of JPS6446748A publication Critical patent/JPS6446748A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)

Abstract

PURPOSE:To form a thin CMS resist layer with uniformity, without a repelled part by applying a chloromethylated polystyrene CMS solution which is dissolved in a solvent of xylene, and diluted with isoamyl acetate, on the intermediate layer of a silicon oxide layer by a spin coating method. CONSTITUTION:A lower layer 12 composed of a polyimide resin or a novolak resin and the intermediate layer 13 composed of silicon oxide, are formed on a silicon wafer 11. And, the upper layer 14 of the CMS resist is formed by applying the CMS resist solution which is dissolved in the xylene solution and diluted with the isoamyl acetate, on the silicon oxide layer 13 by the spin coating method. As the drop of the isoamyl acetate has a relatively good wetting property on the silicon oxide layer 13, the wetting property of the CMS resist solution is improved, and said solution is applied thinly on the silver oxide layer 13 with uniformity.
JP20303087A 1987-08-17 1987-08-17 Method for applying and forming chloromethylated polystyrene resist Pending JPS6446748A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20303087A JPS6446748A (en) 1987-08-17 1987-08-17 Method for applying and forming chloromethylated polystyrene resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20303087A JPS6446748A (en) 1987-08-17 1987-08-17 Method for applying and forming chloromethylated polystyrene resist

Publications (1)

Publication Number Publication Date
JPS6446748A true JPS6446748A (en) 1989-02-21

Family

ID=16467184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20303087A Pending JPS6446748A (en) 1987-08-17 1987-08-17 Method for applying and forming chloromethylated polystyrene resist

Country Status (1)

Country Link
JP (1) JPS6446748A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5203975A (en) * 1991-10-29 1993-04-20 E. I. Du Pont De Nemours And Company Process for cathodic electrodeposition of a clear coating over a conductive paint layer
WO2019065017A1 (en) * 2017-09-29 2019-04-04 日本ゼオン株式会社 Positive resist composition, resist film formation method, and method for producing laminate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5203975A (en) * 1991-10-29 1993-04-20 E. I. Du Pont De Nemours And Company Process for cathodic electrodeposition of a clear coating over a conductive paint layer
WO2019065017A1 (en) * 2017-09-29 2019-04-04 日本ゼオン株式会社 Positive resist composition, resist film formation method, and method for producing laminate
CN111065967A (en) * 2017-09-29 2020-04-24 日本瑞翁株式会社 Positive resist composition, method for forming resist film, and method for producing laminate
JPWO2019065017A1 (en) * 2017-09-29 2020-09-10 日本ゼオン株式会社 Positive resist composition, resist film forming method, and method for producing a laminate
CN111065967B (en) * 2017-09-29 2023-06-23 日本瑞翁株式会社 Positive resist composition, method for forming resist film, and method for producing laminate

Similar Documents

Publication Publication Date Title
JPS6446748A (en) Method for applying and forming chloromethylated polystyrene resist
JPS6412553A (en) Manufacture of semiconductor device
JPS56125855A (en) Manufacture of semiconductor device
JPS56125856A (en) Manufacture of semiconductor device
JPS5460582A (en) Electrode wiring and its forming method in semiconductor device
JPS5585042A (en) Semiconductor device
JPS642339A (en) Manufacture of semiconductor device
JPS577925A (en) Manufacture of thin film integrated circuit
JPS5769776A (en) Semiconductor device and manufacture thereof
JPS5524477A (en) Integrated circuit
JPS56157025A (en) Manufacture of semiconductor device
JPS5766651A (en) Manufacture of semiconductor device
JPS5247689A (en) Process for production of semiconductor device
JPS57211785A (en) Electrode formation of semiconductor device
JPS56155551A (en) Semiconductor device
JPS5283073A (en) Production of semiconductor device
JPS56140643A (en) Manufacture of semiconductor device
JPS57206049A (en) Manufacture of semiconductor device
JPS5678141A (en) Method of forming electrode for semiconductor device
JPS5651842A (en) Semiconductor device having bump
JPS5317286A (en) Production of semiconductor device
JPS5717129A (en) Manufacture of semiconductor device
JPS5352388A (en) Semiconductor device
JPS57102051A (en) Manufacture of semiconductor device
JPS57102025A (en) Manufacture of semiconductor device