JPS5443551A - Monolithic semiconductor integrated circuit - Google Patents
Monolithic semiconductor integrated circuitInfo
- Publication number
- JPS5443551A JPS5443551A JP10987677A JP10987677A JPS5443551A JP S5443551 A JPS5443551 A JP S5443551A JP 10987677 A JP10987677 A JP 10987677A JP 10987677 A JP10987677 A JP 10987677A JP S5443551 A JPS5443551 A JP S5443551A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- source
- misfet
- supply terminal
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G04—HOROLOGY
- G04G—ELECTRONIC TIME-PIECES
- G04G99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10987677A JPS5443551A (en) | 1977-09-14 | 1977-09-14 | Monolithic semiconductor integrated circuit |
US05/931,006 US4239980A (en) | 1977-09-14 | 1978-08-04 | Integrated circuit having an operation voltage supplying depletion type MISFET of high breakdown voltage structure |
DE2840079A DE2840079C2 (de) | 1977-09-14 | 1978-09-14 | Monolithisch integrierte Halbleiterschaltung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10987677A JPS5443551A (en) | 1977-09-14 | 1977-09-14 | Monolithic semiconductor integrated circuit |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3237384A Division JPS59229628A (ja) | 1984-02-24 | 1984-02-24 | モノリシツク半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5443551A true JPS5443551A (en) | 1979-04-06 |
JPS6132692B2 JPS6132692B2 (ja) | 1986-07-29 |
Family
ID=14521406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10987677A Granted JPS5443551A (en) | 1977-09-14 | 1977-09-14 | Monolithic semiconductor integrated circuit |
Country Status (3)
Country | Link |
---|---|
US (1) | US4239980A (ja) |
JP (1) | JPS5443551A (ja) |
DE (1) | DE2840079C2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59163849A (ja) * | 1983-03-08 | 1984-09-14 | Toshiba Corp | 半導体集積回路 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5493572A (en) * | 1981-04-17 | 1996-02-20 | Hitachi, Ltd. | Semiconductor integrated circuit with voltage limiter having different output ranges for normal operation and performing of aging tests |
USRE35313E (en) * | 1981-04-17 | 1996-08-13 | Hitachi, Ltd. | Semiconductor integrated circuit with voltage limiter having different output ranges from normal operation and performing of aging tests |
US4445051A (en) * | 1981-06-26 | 1984-04-24 | Burroughs Corporation | Field effect current mode logic gate |
JPS5869124A (ja) * | 1981-10-20 | 1983-04-25 | Toshiba Corp | 半導体集積回路 |
US5566185A (en) * | 1982-04-14 | 1996-10-15 | Hitachi, Ltd. | Semiconductor integrated circuit |
US4516225A (en) * | 1983-02-18 | 1985-05-07 | Advanced Micro Devices, Inc. | MOS Depletion load circuit |
US4926074A (en) * | 1987-10-30 | 1990-05-15 | North American Philips Corporation | Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor |
US5051618A (en) * | 1988-06-20 | 1991-09-24 | Idesco Oy | High voltage system using enhancement and depletion field effect transistors |
US6208195B1 (en) | 1991-03-18 | 2001-03-27 | Integrated Device Technology, Inc. | Fast transmission gate switch |
JPH06506333A (ja) | 1991-03-18 | 1994-07-14 | クウォリティ・セミコンダクタ・インコーポレイテッド | 高速トランスミッションゲートスイッチ |
JP4846272B2 (ja) | 2005-06-07 | 2011-12-28 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US20080180160A1 (en) * | 2007-01-31 | 2008-07-31 | Infineon Technologies Ag | High voltage dual gate cmos switching device and method |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5211199B1 (ja) * | 1970-05-27 | 1977-03-29 | ||
DE2356446A1 (de) * | 1973-11-12 | 1975-05-28 | Licentia Gmbh | Integrierte schaltung mit feldeffekttransistoren |
JPS531626B2 (ja) * | 1975-01-06 | 1978-01-20 | ||
US4039869A (en) * | 1975-11-28 | 1977-08-02 | Rca Corporation | Protection circuit |
US4107548A (en) * | 1976-03-05 | 1978-08-15 | Hitachi, Ltd. | Ratioless type MIS logic circuit |
US4072868A (en) * | 1976-09-16 | 1978-02-07 | International Business Machines Corporation | FET inverter with isolated substrate load |
US4094012A (en) * | 1976-10-01 | 1978-06-06 | Intel Corporation | Electrically programmable MOS read-only memory with isolated decoders |
US4135102A (en) * | 1977-07-18 | 1979-01-16 | Mostek Corporation | High performance inverter circuits |
-
1977
- 1977-09-14 JP JP10987677A patent/JPS5443551A/ja active Granted
-
1978
- 1978-08-04 US US05/931,006 patent/US4239980A/en not_active Expired - Lifetime
- 1978-09-14 DE DE2840079A patent/DE2840079C2/de not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59163849A (ja) * | 1983-03-08 | 1984-09-14 | Toshiba Corp | 半導体集積回路 |
JPH0524670B2 (ja) * | 1983-03-08 | 1993-04-08 | Tokyo Shibaura Electric Co |
Also Published As
Publication number | Publication date |
---|---|
US4239980A (en) | 1980-12-16 |
DE2840079C2 (de) | 1983-08-18 |
JPS6132692B2 (ja) | 1986-07-29 |
DE2840079A1 (de) | 1979-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56108258A (en) | Semiconductor device | |
JPS55149871A (en) | Line voltage detector | |
JPS54131890A (en) | Semiconductor device | |
JPS5443551A (en) | Monolithic semiconductor integrated circuit | |
KR870009542A (ko) | Mosfet의 소오스가 부하에 연결되는 mosfet를 동작시키기 위한 회로배열 | |
EP0339962A3 (en) | Field effect semiconductor device | |
JPS54132753A (en) | Referential voltage generator and its application | |
JPS5384578A (en) | Semiconductor integrated circuit | |
JPS51116687A (en) | Semiconductor integrated circuit device | |
GB1322450A (en) | Transistor circuits | |
FR2296307A1 (fr) | Circuits a resistance negative a dispositifs mos complementaires | |
JPS5593325A (en) | Precharge circuit of mos transistor | |
JPS51147972A (en) | Insulated gate field effect semiconductor device | |
JPS5667962A (en) | Gate protection circuit of mos field effect transistor | |
JPS6414960A (en) | Semiconductor element | |
JPS5640279A (en) | Semiconductor integrated circuit | |
FR2296311A1 (fr) | Dispositif logique cable cmos | |
JPS5794984A (en) | Semiconductor storage device | |
JPS5516557A (en) | Voltage selective switching circuit | |
JPS5313852A (en) | Level conversion circuit | |
JPS5656666A (en) | Mos integrated circuit device and preparation thereof | |
SU540377A1 (ru) | Переключатель | |
JPS5558575A (en) | Semiconductor device | |
JPS6450459A (en) | Semiconductor device | |
FR2251100A1 (en) | Saturable resistance semiconducting device - is included in circuit having temperature compensation |