FR2296307A1 - Circuits a resistance negative a dispositifs mos complementaires - Google Patents
Circuits a resistance negative a dispositifs mos complementairesInfo
- Publication number
- FR2296307A1 FR2296307A1 FR7534734A FR7534734A FR2296307A1 FR 2296307 A1 FR2296307 A1 FR 2296307A1 FR 7534734 A FR7534734 A FR 7534734A FR 7534734 A FR7534734 A FR 7534734A FR 2296307 A1 FR2296307 A1 FR 2296307A1
- Authority
- FR
- France
- Prior art keywords
- transistor
- switching
- integrated circuit
- negative resistance
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/04163—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/46—One-port networks
- H03H11/52—One-port networks simulating negative resistances
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
- H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
- H03K5/023—Shaping pulses by amplifying using field effect transistors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B3/00—Line transmission systems
- H04B3/02—Details
- H04B3/04—Control of transmission; Equalising
- H04B3/16—Control of transmission; Equalising characterised by the negative-impedance network used
- H04B3/18—Control of transmission; Equalising characterised by the negative-impedance network used wherein the network comprises semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Nonlinear Science (AREA)
- Networks Using Active Elements (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53608074A | 1974-12-24 | 1974-12-24 | |
US05/695,716 UST955006I4 (en) | 1974-12-24 | 1976-06-14 | Delay circuits using negative resistance CMOS circuits |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2296307A1 true FR2296307A1 (fr) | 1976-07-23 |
FR2296307B1 FR2296307B1 (fr) | 1977-12-16 |
Family
ID=27065031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7534734A Granted FR2296307A1 (fr) | 1974-12-24 | 1975-11-07 | Circuits a resistance negative a dispositifs mos complementaires |
Country Status (3)
Country | Link |
---|---|
US (1) | UST955006I4 (fr) |
JP (1) | JPS5178665A (fr) |
FR (1) | FR2296307A1 (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0120992A2 (fr) * | 1983-03-31 | 1984-10-10 | International Business Machines Corporation | Circuit porte ET de commande |
EP0145004A2 (fr) * | 1983-12-12 | 1985-06-19 | Hitachi, Ltd. | Circuit composite, transistors bipolaires-transistors à effet de champ |
EP0216178A1 (fr) * | 1985-08-29 | 1987-04-01 | Siemens Aktiengesellschaft | Circuit d'entrée CMOS |
EP0296508A2 (fr) * | 1987-06-23 | 1988-12-28 | Honeywell Inc. | Circuit logique FET d'attaque de capacité |
EP0468209A2 (fr) * | 1990-07-27 | 1992-01-29 | STMicroelectronics S.r.l. | Translateur de niveau à commande unique, à faible impédance dynamique |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5915567B2 (ja) * | 1979-07-19 | 1984-04-10 | 富士通株式会社 | Cmosのシュミット回路 |
JPS5619585A (en) * | 1979-07-26 | 1981-02-24 | Toshiba Corp | Semiconductor memory unit |
US4952818A (en) | 1989-05-17 | 1990-08-28 | International Business Machines Corporation | Transmission line driver circuits |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2196560A1 (fr) * | 1972-08-18 | 1974-03-15 | Matsushita Electric Ind Co Ltd | |
FR2212710A1 (fr) * | 1972-12-29 | 1974-07-26 | Ibm |
-
1975
- 1975-11-05 JP JP50132212A patent/JPS5178665A/ja active Pending
- 1975-11-07 FR FR7534734A patent/FR2296307A1/fr active Granted
-
1976
- 1976-06-14 US US05/695,716 patent/UST955006I4/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2196560A1 (fr) * | 1972-08-18 | 1974-03-15 | Matsushita Electric Ind Co Ltd | |
FR2212710A1 (fr) * | 1972-12-29 | 1974-07-26 | Ibm |
Non-Patent Citations (1)
Title |
---|
REVUE US IBM TECHNICAL DISCLOSURE BULLETIN, VOL. 15, NO. 6, NOVEMBRE 1972 , ARTICLE DE A.J.GRUODIS: "NEGATIVE RESISTANCE USING FET'S", PAGES 1771) * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0120992A2 (fr) * | 1983-03-31 | 1984-10-10 | International Business Machines Corporation | Circuit porte ET de commande |
EP0120992A3 (en) * | 1983-03-31 | 1985-07-31 | International Business Machines Corporation | And-gate driver circuit |
EP0145004A2 (fr) * | 1983-12-12 | 1985-06-19 | Hitachi, Ltd. | Circuit composite, transistors bipolaires-transistors à effet de champ |
EP0145004A3 (en) * | 1983-12-12 | 1987-08-19 | Hitachi, Ltd. | Bipolar transistor-field effect transistor composite circuit |
EP0216178A1 (fr) * | 1985-08-29 | 1987-04-01 | Siemens Aktiengesellschaft | Circuit d'entrée CMOS |
EP0296508A2 (fr) * | 1987-06-23 | 1988-12-28 | Honeywell Inc. | Circuit logique FET d'attaque de capacité |
EP0296508A3 (en) * | 1987-06-23 | 1989-07-12 | Honeywell Inc. | Fet capacitance driver logic circuit |
EP0468209A2 (fr) * | 1990-07-27 | 1992-01-29 | STMicroelectronics S.r.l. | Translateur de niveau à commande unique, à faible impédance dynamique |
EP0468209A3 (en) * | 1990-07-27 | 1992-04-29 | Sgs-Thomson Microelectronics S.P.A. | Single-drive level shifter, with low dynamic impedance |
Also Published As
Publication number | Publication date |
---|---|
JPS5178665A (fr) | 1976-07-08 |
FR2296307B1 (fr) | 1977-12-16 |
UST955006I4 (en) | 1977-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |