JPS6450459A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6450459A
JPS6450459A JP62207683A JP20768387A JPS6450459A JP S6450459 A JPS6450459 A JP S6450459A JP 62207683 A JP62207683 A JP 62207683A JP 20768387 A JP20768387 A JP 20768387A JP S6450459 A JPS6450459 A JP S6450459A
Authority
JP
Japan
Prior art keywords
transistor
vcc
gate electrode
channel field
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62207683A
Other languages
Japanese (ja)
Inventor
Kazushige Idei
Toyokatsu Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62207683A priority Critical patent/JPS6450459A/en
Publication of JPS6450459A publication Critical patent/JPS6450459A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve breakdown voltage against the surge of a power source voltage (Vcc) by providing a second P-channel field effect transistor on the side of gate electrode of a P-channel field-effect transistor of an input protective circuit. CONSTITUTION:Another P-channel field effect transistor 5 is added at the gate electrode of a P-channel field effect transistor 3 of a conventional input protective circuit, and the added transistor 5 is so connected at its gate electrode to a GND 2 as to always hold in an ON state. Accordingly, when a source electrode is connected to a Vcc 1, the Vcc 1 is output to a drain electrode. The drain electrode is connected to the gate electrode of the transistor 3 of the input protective circuit to turn OFF the transistor 3. Since the added transistor 5 has a diode structure, if a surge rides on the Vcc 1, it is absorbed but it is not applied to the gate electrode of the transistor 3. Thus, the surge breakdown voltage of the Vcc is improved.
JP62207683A 1987-08-20 1987-08-20 Semiconductor device Pending JPS6450459A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62207683A JPS6450459A (en) 1987-08-20 1987-08-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62207683A JPS6450459A (en) 1987-08-20 1987-08-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6450459A true JPS6450459A (en) 1989-02-27

Family

ID=16543845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62207683A Pending JPS6450459A (en) 1987-08-20 1987-08-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6450459A (en)

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