JPS5211199B1 - - Google Patents

Info

Publication number
JPS5211199B1
JPS5211199B1 JP45044892A JP4489270A JPS5211199B1 JP S5211199 B1 JPS5211199 B1 JP S5211199B1 JP 45044892 A JP45044892 A JP 45044892A JP 4489270 A JP4489270 A JP 4489270A JP S5211199 B1 JPS5211199 B1 JP S5211199B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45044892A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP45044892A priority Critical patent/JPS5211199B1/ja
Priority to US146154A priority patent/US3700981A/en
Publication of JPS5211199B1 publication Critical patent/JPS5211199B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
JP45044892A 1970-05-27 1970-05-27 Pending JPS5211199B1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP45044892A JPS5211199B1 (ja) 1970-05-27 1970-05-27
US146154A US3700981A (en) 1970-05-27 1971-05-24 Semiconductor integrated circuit composed of cascade connection of inverter circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45044892A JPS5211199B1 (ja) 1970-05-27 1970-05-27

Publications (1)

Publication Number Publication Date
JPS5211199B1 true JPS5211199B1 (ja) 1977-03-29

Family

ID=12704119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45044892A Pending JPS5211199B1 (ja) 1970-05-27 1970-05-27

Country Status (2)

Country Link
US (1) US3700981A (ja)
JP (1) JPS5211199B1 (ja)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1345818A (en) * 1971-07-27 1974-02-06 Mullard Ltd Semiconductor devices
JPS5931253B2 (ja) * 1972-08-25 1984-08-01 株式会社日立製作所 デプレツシヨン型負荷トランジスタを有するｍｉｓｆｅｔ論理回路
US3965369A (en) * 1972-08-25 1976-06-22 Hitachi, Ltd. MISFET (Metal-insulator-semiconductor field-effect transistor) logical circuit having depletion type load transistor
DE2252130C2 (de) * 1972-10-24 1978-06-08 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch integrierte Schmitt-Trigger-Schaltung aus Isolierschicht-Feldeffekttransistoren
JPS4968634A (ja) * 1972-11-06 1974-07-03
US3832574A (en) * 1972-12-29 1974-08-27 Ibm Fast insulated gate field effect transistor circuit using multiple threshold technology
US3870901A (en) * 1973-12-10 1975-03-11 Gen Instrument Corp Method and apparatus for maintaining the charge on a storage node of a mos circuit
FR2264434B1 (ja) * 1974-03-12 1976-07-16 Thomson Csf
US3913026A (en) * 1974-04-08 1975-10-14 Bulova Watch Co Inc Mos transistor gain block
JPS50134553A (ja) * 1974-04-10 1975-10-24
JPS50142128A (ja) * 1974-05-07 1975-11-15
DE2440937C3 (de) * 1974-08-27 1981-10-01 Siemens AG, 1000 Berlin und 8000 München Differenzverstärker mit zwei MOS-Transistoren
US3969633A (en) * 1975-01-08 1976-07-13 Mostek Corporation Self-biased trinary input circuit for MOSFET integrated circuit
JPS5198938A (ja) * 1975-02-26 1976-08-31
GB1546066A (en) * 1975-05-27 1979-05-16 Standard Telephones Cables Ltd Voltage regulator for cmos circuits
CH600678A5 (ja) * 1975-08-12 1978-06-30 Centre Electron Horloger
US3970951A (en) * 1975-11-12 1976-07-20 International Business Machines Corporation Differential amplifier with constant gain
US4001612A (en) * 1975-12-17 1977-01-04 International Business Machines Corporation Linear resistance element for lsi circuitry
US4004164A (en) * 1975-12-18 1977-01-18 International Business Machines Corporation Compensating current source
JPS5275134A (en) * 1975-12-19 1977-06-23 Hitachi Ltd Electric charge transfer device
JPS52123848A (en) * 1976-04-12 1977-10-18 Seiko Epson Corp Amplifier
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit
US4072868A (en) * 1976-09-16 1978-02-07 International Business Machines Corporation FET inverter with isolated substrate load
US4094012A (en) * 1976-10-01 1978-06-06 Intel Corporation Electrically programmable MOS read-only memory with isolated decoders
US4068140A (en) * 1976-12-27 1978-01-10 Texas Instruments Incorporated MOS source follower circuit
US4096398A (en) * 1977-02-23 1978-06-20 National Semiconductor Corporation MOS output buffer circuit with feedback
US4129793A (en) * 1977-06-16 1978-12-12 International Business Machines Corporation High speed true/complement driver
US4135102A (en) * 1977-07-18 1979-01-16 Mostek Corporation High performance inverter circuits
US4142114A (en) * 1977-07-18 1979-02-27 Mostek Corporation Integrated circuit with threshold regulation
JPS5433679A (en) * 1977-08-22 1979-03-12 Agency Of Ind Science & Technol Semiconductor intergrated circuit on insulation substrate
JPS5443551A (en) * 1977-09-14 1979-04-06 Hitachi Ltd Monolithic semiconductor integrated circuit
FR2449369A1 (fr) * 1979-02-13 1980-09-12 Thomson Csf Circuit logique comportant une resistance saturable
DE3026951A1 (de) * 1980-07-16 1982-02-04 Siemens AG, 1000 Berlin und 8000 München Treiberstufe in integrierter mos-schaltkreistechnik mit grossem ausgangssignalverhaeltnis
JPS5750109A (en) * 1980-09-10 1982-03-24 Toshiba Corp High impedance circuit for integrated circuit
JPS56138335A (en) * 1981-03-09 1981-10-28 Hitachi Ltd Integrated circuit
JPS5869124A (ja) * 1981-10-20 1983-04-25 Toshiba Corp 半導体集積回路
GB2224160A (en) * 1988-10-24 1990-04-25 Marconi Instruments Ltd Integrated semiconductor circuits
US5079441A (en) * 1988-12-19 1992-01-07 Texas Instruments Incorporated Integrated circuit having an internal reference circuit to supply internal logic circuits with a reduced voltage
JPH06334480A (ja) * 1993-05-25 1994-12-02 Nec Corp 半導体集積回路
KR950012079A (ko) * 1993-10-29 1995-05-16 발도르프, 옴케 집적 비교기 회로
US5514982A (en) * 1994-08-18 1996-05-07 Harris Corporation Low noise logic family
US6090673A (en) * 1998-10-20 2000-07-18 International Business Machines Corporation Device contact structure and method for fabricating same
US6198330B1 (en) * 1999-12-07 2001-03-06 Analog Devices, Inc. Adaptive-load inverters and methods
GB0321383D0 (en) * 2003-09-12 2003-10-15 Plastic Logic Ltd Polymer circuits
KR101529575B1 (ko) * 2008-09-10 2015-06-29 삼성전자주식회사 트랜지스터, 이를 포함하는 인버터 및 이들의 제조방법
US7969226B2 (en) * 2009-05-07 2011-06-28 Semisouth Laboratories, Inc. High temperature gate drivers for wide bandgap semiconductor power JFETs and integrated circuits including the same
EP2264899B1 (en) 2009-06-17 2014-07-30 Epcos AG Low-current logic-gate circuit
EP2264900B1 (en) * 2009-06-17 2014-07-30 Epcos AG Low-current inverter circuit
EP2270946B1 (en) 2009-06-22 2014-04-09 Epcos AG Low-current input buffer

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
FIELD-EFFECT TRANSISTORS PHYSICS TECHNOLOGY AND APPLICATIONS *
M0SFET IN CIRUIT DESIGN *
MOSFETIN CIRCUIT DESIGN *

Also Published As

Publication number Publication date
US3700981A (en) 1972-10-24

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