FR2251100A1 - Saturable resistance semiconducting device - is included in circuit having temperature compensation - Google Patents

Saturable resistance semiconducting device - is included in circuit having temperature compensation

Info

Publication number
FR2251100A1
FR2251100A1 FR7340300A FR7340300A FR2251100A1 FR 2251100 A1 FR2251100 A1 FR 2251100A1 FR 7340300 A FR7340300 A FR 7340300A FR 7340300 A FR7340300 A FR 7340300A FR 2251100 A1 FR2251100 A1 FR 2251100A1
Authority
FR
France
Prior art keywords
terminal
circuit
temperature compensation
semiconducting device
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7340300A
Other languages
French (fr)
Other versions
FR2251100B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7340300A priority Critical patent/FR2251100A1/en
Publication of FR2251100A1 publication Critical patent/FR2251100A1/en
Application granted granted Critical
Publication of FR2251100B1 publication Critical patent/FR2251100B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

A low internal resistance dc supply source (40) has a positive (401) and negative (403) terminal. It includes a junction FET (41) having base, collector and emitter electrodes as well as a channel of one of the two types of conductivity N or P, and two output terminals (43, 44) one of which is connected to the emitter electrode (412) and the other to a first terminal of the supply source (403), negative if the channel is N type, positive if the channel is P type. The collector (411) is connected to a second terminal of the source of opposite polarity to that of the first terminal and the base is connected through a high resistance (Rg) to a third terminal (402) of the supply source of opposite polarity to that of the first terminal (403).
FR7340300A 1973-11-13 1973-11-13 Saturable resistance semiconducting device - is included in circuit having temperature compensation Granted FR2251100A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7340300A FR2251100A1 (en) 1973-11-13 1973-11-13 Saturable resistance semiconducting device - is included in circuit having temperature compensation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7340300A FR2251100A1 (en) 1973-11-13 1973-11-13 Saturable resistance semiconducting device - is included in circuit having temperature compensation

Publications (2)

Publication Number Publication Date
FR2251100A1 true FR2251100A1 (en) 1975-06-06
FR2251100B1 FR2251100B1 (en) 1977-09-16

Family

ID=9127652

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7340300A Granted FR2251100A1 (en) 1973-11-13 1973-11-13 Saturable resistance semiconducting device - is included in circuit having temperature compensation

Country Status (1)

Country Link
FR (1) FR2251100A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2539932A1 (en) * 1983-01-21 1984-07-27 Thomson Csf DEVICE FOR COMPENSATING THE TEMPERATURE GAIN DERIVATIVES OF A MICROWAVE ELECTRICAL SIGNAL AMPLIFIER

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2539932A1 (en) * 1983-01-21 1984-07-27 Thomson Csf DEVICE FOR COMPENSATING THE TEMPERATURE GAIN DERIVATIVES OF A MICROWAVE ELECTRICAL SIGNAL AMPLIFIER
EP0116492A1 (en) * 1983-01-21 1984-08-22 Thomson-Csf Compensation device of the gain deviation with temperature of a hyperfrequency signal amplifier

Also Published As

Publication number Publication date
FR2251100B1 (en) 1977-09-16

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Legal Events

Date Code Title Description
ST Notification of lapse