JPS54159887A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS54159887A
JPS54159887A JP6947778A JP6947778A JPS54159887A JP S54159887 A JPS54159887 A JP S54159887A JP 6947778 A JP6947778 A JP 6947778A JP 6947778 A JP6947778 A JP 6947778A JP S54159887 A JPS54159887 A JP S54159887A
Authority
JP
Japan
Prior art keywords
layer
sio2
poly
crystal
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6947778A
Other languages
Japanese (ja)
Inventor
Takeo Fujii
Taiichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6947778A priority Critical patent/JPS54159887A/en
Publication of JPS54159887A publication Critical patent/JPS54159887A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To prevent pollution ions from invading a field insulating film to prevent the lowering of the insulating property between memory cell capacities dependent upon parasitic channel-property leak. CONSTITUTION:Memory cell capacity regions which are formed by poly-crystal Si layer 23a of the first layer and are adjacent to each other are insulated by channel stopper 27, which is obtained by diffusing B to P-type Si substrate 21, and field SiO2 film 26 which is obtained by subjecting substrate 21 to thermal oxidation. Then, the insulating film under Si layer 23a has a three-layer structure of SiO2 layer 22a, Si N layer 29 and SiO2 layer 22a2. This Si N layer 29 covers the surface of field SiO2 film 26. A transfer gate region is formed by poly-crystal Si layer 23b which is insulated from poly-crystal Si layer 23a by SiO2 film 24, and is covered with P, S and G layer 25, thereby stabilizing the thershold voltage of the transfer gate. Then, diffusion layer 28 obtained by diffusing selectively P to P-type Si substrate 21 forms a digit line.
JP6947778A 1978-06-08 1978-06-08 Semiconductor memory device Pending JPS54159887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6947778A JPS54159887A (en) 1978-06-08 1978-06-08 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6947778A JPS54159887A (en) 1978-06-08 1978-06-08 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS54159887A true JPS54159887A (en) 1979-12-18

Family

ID=13403798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6947778A Pending JPS54159887A (en) 1978-06-08 1978-06-08 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS54159887A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191676A (en) * 1975-02-10 1976-08-11
JPS5212584A (en) * 1975-07-21 1977-01-31 Siemens Ag Semiconductor memory
JPS5294782A (en) * 1976-02-05 1977-08-09 Nec Corp Insulation gate type ic
JPS5299791A (en) * 1976-02-18 1977-08-22 Nec Corp Intergrated circuit
JPS5499791A (en) * 1978-01-25 1979-08-06 Teijin Ltd Oxygen absorbent

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191676A (en) * 1975-02-10 1976-08-11
JPS5212584A (en) * 1975-07-21 1977-01-31 Siemens Ag Semiconductor memory
JPS5294782A (en) * 1976-02-05 1977-08-09 Nec Corp Insulation gate type ic
JPS5299791A (en) * 1976-02-18 1977-08-22 Nec Corp Intergrated circuit
JPS5499791A (en) * 1978-01-25 1979-08-06 Teijin Ltd Oxygen absorbent

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