JPS54127289A - Semiconductor integrated circuit device and its manufacture - Google Patents

Semiconductor integrated circuit device and its manufacture

Info

Publication number
JPS54127289A
JPS54127289A JP3511778A JP3511778A JPS54127289A JP S54127289 A JPS54127289 A JP S54127289A JP 3511778 A JP3511778 A JP 3511778A JP 3511778 A JP3511778 A JP 3511778A JP S54127289 A JPS54127289 A JP S54127289A
Authority
JP
Japan
Prior art keywords
film
load transistor
gate oxide
oxide film
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3511778A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237546B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3511778A priority Critical patent/JPS54127289A/ja
Publication of JPS54127289A publication Critical patent/JPS54127289A/ja
Publication of JPS6237546B2 publication Critical patent/JPS6237546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP3511778A 1978-03-27 1978-03-27 Semiconductor integrated circuit device and its manufacture Granted JPS54127289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3511778A JPS54127289A (en) 1978-03-27 1978-03-27 Semiconductor integrated circuit device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3511778A JPS54127289A (en) 1978-03-27 1978-03-27 Semiconductor integrated circuit device and its manufacture

Publications (2)

Publication Number Publication Date
JPS54127289A true JPS54127289A (en) 1979-10-03
JPS6237546B2 JPS6237546B2 (enrdf_load_stackoverflow) 1987-08-13

Family

ID=12432977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3511778A Granted JPS54127289A (en) 1978-03-27 1978-03-27 Semiconductor integrated circuit device and its manufacture

Country Status (1)

Country Link
JP (1) JPS54127289A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100478A (en) * 1980-01-16 1981-08-12 Toshiba Corp Semiconductor device and manufacture thereof
JPS6237943U (enrdf_load_stackoverflow) * 1986-05-01 1987-03-06
JPH03116968A (ja) * 1989-09-29 1991-05-17 Sharp Corp 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542682A (en) * 1977-06-08 1979-01-10 Mitsubishi Electric Corp Manufacture of mos-type integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542682A (en) * 1977-06-08 1979-01-10 Mitsubishi Electric Corp Manufacture of mos-type integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100478A (en) * 1980-01-16 1981-08-12 Toshiba Corp Semiconductor device and manufacture thereof
JPS6237943U (enrdf_load_stackoverflow) * 1986-05-01 1987-03-06
JPH03116968A (ja) * 1989-09-29 1991-05-17 Sharp Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6237546B2 (enrdf_load_stackoverflow) 1987-08-13

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