JPS6237546B2 - - Google Patents

Info

Publication number
JPS6237546B2
JPS6237546B2 JP53035117A JP3511778A JPS6237546B2 JP S6237546 B2 JPS6237546 B2 JP S6237546B2 JP 53035117 A JP53035117 A JP 53035117A JP 3511778 A JP3511778 A JP 3511778A JP S6237546 B2 JPS6237546 B2 JP S6237546B2
Authority
JP
Japan
Prior art keywords
oxide film
film
transistor
gate oxide
thinner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53035117A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54127289A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3511778A priority Critical patent/JPS54127289A/ja
Publication of JPS54127289A publication Critical patent/JPS54127289A/ja
Publication of JPS6237546B2 publication Critical patent/JPS6237546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP3511778A 1978-03-27 1978-03-27 Semiconductor integrated circuit device and its manufacture Granted JPS54127289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3511778A JPS54127289A (en) 1978-03-27 1978-03-27 Semiconductor integrated circuit device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3511778A JPS54127289A (en) 1978-03-27 1978-03-27 Semiconductor integrated circuit device and its manufacture

Publications (2)

Publication Number Publication Date
JPS54127289A JPS54127289A (en) 1979-10-03
JPS6237546B2 true JPS6237546B2 (enrdf_load_stackoverflow) 1987-08-13

Family

ID=12432977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3511778A Granted JPS54127289A (en) 1978-03-27 1978-03-27 Semiconductor integrated circuit device and its manufacture

Country Status (1)

Country Link
JP (1) JPS54127289A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100478A (en) * 1980-01-16 1981-08-12 Toshiba Corp Semiconductor device and manufacture thereof
JPS6237943U (enrdf_load_stackoverflow) * 1986-05-01 1987-03-06
JPH03116968A (ja) * 1989-09-29 1991-05-17 Sharp Corp 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943828B2 (ja) * 1977-06-08 1984-10-24 三菱電機株式会社 Ｍｏｓ形集積回路の製造方法

Also Published As

Publication number Publication date
JPS54127289A (en) 1979-10-03

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