JPH0358186B2 - - Google Patents
Info
- Publication number
- JPH0358186B2 JPH0358186B2 JP56093157A JP9315781A JPH0358186B2 JP H0358186 B2 JPH0358186 B2 JP H0358186B2 JP 56093157 A JP56093157 A JP 56093157A JP 9315781 A JP9315781 A JP 9315781A JP H0358186 B2 JPH0358186 B2 JP H0358186B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- thickness
- sub
- work function
- function value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Landscapes
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56093157A JPS57208172A (en) | 1981-06-17 | 1981-06-17 | Controlling method for threshold voltage of mos field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56093157A JPS57208172A (en) | 1981-06-17 | 1981-06-17 | Controlling method for threshold voltage of mos field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57208172A JPS57208172A (en) | 1982-12-21 |
| JPH0358186B2 true JPH0358186B2 (enrdf_load_stackoverflow) | 1991-09-04 |
Family
ID=14074705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56093157A Granted JPS57208172A (en) | 1981-06-17 | 1981-06-17 | Controlling method for threshold voltage of mos field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57208172A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2739491B1 (fr) | 1995-09-28 | 1997-12-12 | Sgs Thomson Microelectronics | Procede de modification du dopage d'une couche de silicium |
-
1981
- 1981-06-17 JP JP56093157A patent/JPS57208172A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57208172A (en) | 1982-12-21 |
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