JPH11274462A - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JPH11274462A
JPH11274462A JP10074392A JP7439298A JPH11274462A JP H11274462 A JPH11274462 A JP H11274462A JP 10074392 A JP10074392 A JP 10074392A JP 7439298 A JP7439298 A JP 7439298A JP H11274462 A JPH11274462 A JP H11274462A
Authority
JP
Japan
Prior art keywords
imaging device
solid
state imaging
photoelectric conversion
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10074392A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11274462A5 (enExample
Inventor
Ryoji Suzuki
亮司 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP10074392A priority Critical patent/JPH11274462A/ja
Priority to GB9906454A priority patent/GB2335793B/en
Priority to US09/273,271 priority patent/US6326655B1/en
Priority to KR1019990009916A priority patent/KR100605436B1/ko
Publication of JPH11274462A publication Critical patent/JPH11274462A/ja
Publication of JPH11274462A5 publication Critical patent/JPH11274462A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP10074392A 1998-03-23 1998-03-23 固体撮像装置 Pending JPH11274462A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10074392A JPH11274462A (ja) 1998-03-23 1998-03-23 固体撮像装置
GB9906454A GB2335793B (en) 1998-03-23 1999-03-19 Solid state imaging device
US09/273,271 US6326655B1 (en) 1998-03-23 1999-03-22 Solid state imaging device having a gate electrode formed over a potential dip
KR1019990009916A KR100605436B1 (ko) 1998-03-23 1999-03-23 고체 촬상 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10074392A JPH11274462A (ja) 1998-03-23 1998-03-23 固体撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011083064A Division JP2011142344A (ja) 2011-04-04 2011-04-04 固体撮像装置

Publications (2)

Publication Number Publication Date
JPH11274462A true JPH11274462A (ja) 1999-10-08
JPH11274462A5 JPH11274462A5 (enExample) 2005-08-04

Family

ID=13545876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10074392A Pending JPH11274462A (ja) 1998-03-23 1998-03-23 固体撮像装置

Country Status (4)

Country Link
US (1) US6326655B1 (enExample)
JP (1) JPH11274462A (enExample)
KR (1) KR100605436B1 (enExample)
GB (1) GB2335793B (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004510355A (ja) * 2000-09-25 2004-04-02 フォベオン・インコーポレーテッド 垂直型カラーフィルタ検出器群及びアレイ
JP2004336006A (ja) * 2003-04-30 2004-11-25 Hynix Semiconductor Inc 複数のフローティング拡散領域を備えるｃｍｏｓイメージセンサの単位画素
JP2005101442A (ja) * 2003-09-26 2005-04-14 Fujitsu Ltd 固体撮像装置とその製造方法
JP2006121093A (ja) * 2004-10-20 2006-05-11 Samsung Electronics Co Ltd 非平面トランジスタを有する固体イメージセンサ素子及びその製造方法
JP2006521697A (ja) * 2003-03-12 2006-09-21 マイクロン・テクノロジー・インコーポレイテッド トレンチ分離のための傾斜注入
JP2006253309A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 固体撮像装置
JP2010251800A (ja) * 2010-07-26 2010-11-04 Fujitsu Semiconductor Ltd 固体撮像装置の製造方法
WO2011004708A1 (ja) * 2009-07-10 2011-01-13 株式会社島津製作所 固体撮像素子
JP2011142344A (ja) * 2011-04-04 2011-07-21 Sony Corp 固体撮像装置
JP2014135515A (ja) * 2014-04-08 2014-07-24 Sony Corp 固体撮像装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
JP3688980B2 (ja) * 2000-06-28 2005-08-31 株式会社東芝 Ｍｏｓ型固体撮像装置及びその製造方法
JP2004303982A (ja) * 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 固体撮像素子
US7391066B2 (en) * 2003-04-25 2008-06-24 Micron Technology, Inc. Imager floating diffusion region and process for forming same
JP4703163B2 (ja) 2004-10-19 2011-06-15 株式会社東芝 固体撮像装置
US20150021668A1 (en) * 2013-07-19 2015-01-22 Stmicroelectronics Sa Photosensitive cell of an image sensor
JP2017054947A (ja) * 2015-09-10 2017-03-16 セイコーエプソン株式会社 固体撮像素子及びその製造方法、並びに、電子機器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4148048A (en) * 1977-01-24 1979-04-03 Hitachi, Ltd. Solid-state imaging device
JPS5815280A (ja) * 1981-07-21 1983-01-28 Nec Corp 固体撮像素子
JPS59198756A (ja) * 1983-04-27 1984-11-10 Hitachi Ltd 固体撮像素子およびその製造方法
JPH0230183A (ja) * 1988-07-19 1990-01-31 Nec Corp 固体撮像素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144447A (en) * 1988-03-31 1992-09-01 Hitachi, Ltd. Solid-state image array with simultaneously activated line drivers
JP3070146B2 (ja) * 1991-06-19 2000-07-24 ソニー株式会社 固体撮像装置
DE69228838T2 (de) * 1991-07-12 1999-10-21 Sony Corp., Tokio/Tokyo Verfahren zur Steuerung einer Ladungstransferschaltung
JP2832136B2 (ja) * 1992-12-28 1998-12-02 シャープ株式会社 固体撮像装置及びその製造方法
KR950002084A (ko) * 1993-06-22 1995-01-04 오가 노리오 전하전송장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4148048A (en) * 1977-01-24 1979-04-03 Hitachi, Ltd. Solid-state imaging device
JPS5815280A (ja) * 1981-07-21 1983-01-28 Nec Corp 固体撮像素子
JPS59198756A (ja) * 1983-04-27 1984-11-10 Hitachi Ltd 固体撮像素子およびその製造方法
JPH0230183A (ja) * 1988-07-19 1990-01-31 Nec Corp 固体撮像素子

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004510355A (ja) * 2000-09-25 2004-04-02 フォベオン・インコーポレーテッド 垂直型カラーフィルタ検出器群及びアレイ
JP2006521697A (ja) * 2003-03-12 2006-09-21 マイクロン・テクノロジー・インコーポレイテッド トレンチ分離のための傾斜注入
US7919797B2 (en) 2003-03-12 2011-04-05 Aptina Imaging Corporation Angled implant for trench isolation
JP2004336006A (ja) * 2003-04-30 2004-11-25 Hynix Semiconductor Inc 複数のフローティング拡散領域を備えるｃｍｏｓイメージセンサの単位画素
JP2005101442A (ja) * 2003-09-26 2005-04-14 Fujitsu Ltd 固体撮像装置とその製造方法
JP2006121093A (ja) * 2004-10-20 2006-05-11 Samsung Electronics Co Ltd 非平面トランジスタを有する固体イメージセンサ素子及びその製造方法
JP2006253309A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 固体撮像装置
WO2011004708A1 (ja) * 2009-07-10 2011-01-13 株式会社島津製作所 固体撮像素子
JP2010251800A (ja) * 2010-07-26 2010-11-04 Fujitsu Semiconductor Ltd 固体撮像装置の製造方法
JP2011142344A (ja) * 2011-04-04 2011-07-21 Sony Corp 固体撮像装置
JP2014135515A (ja) * 2014-04-08 2014-07-24 Sony Corp 固体撮像装置

Also Published As

Publication number Publication date
GB9906454D0 (en) 1999-05-12
KR100605436B1 (ko) 2006-07-28
KR19990078166A (ko) 1999-10-25
GB2335793A (en) 1999-09-29
GB2335793B (en) 2003-03-05
US6326655B1 (en) 2001-12-04

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