KR100605436B1 - 고체 촬상 장치 - Google Patents

고체 촬상 장치 Download PDF

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Publication number
KR100605436B1
KR100605436B1 KR1019990009916A KR19990009916A KR100605436B1 KR 100605436 B1 KR100605436 B1 KR 100605436B1 KR 1019990009916 A KR1019990009916 A KR 1019990009916A KR 19990009916 A KR19990009916 A KR 19990009916A KR 100605436 B1 KR100605436 B1 KR 100605436B1
Authority
KR
South Korea
Prior art keywords
imaging device
state imaging
solid
signal charge
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019990009916A
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English (en)
Korean (ko)
Other versions
KR19990078166A (ko
Inventor
스즈끼료지
Original Assignee
소니 가부시끼 가이샤
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Publication date
Application filed by 소니 가부시끼 가이샤 filed Critical 소니 가부시끼 가이샤
Publication of KR19990078166A publication Critical patent/KR19990078166A/ko
Application granted granted Critical
Publication of KR100605436B1 publication Critical patent/KR100605436B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1019990009916A 1998-03-23 1999-03-23 고체 촬상 장치 Expired - Lifetime KR100605436B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10074392A JPH11274462A (ja) 1998-03-23 1998-03-23 固体撮像装置
JP1998-074392 1998-03-23

Publications (2)

Publication Number Publication Date
KR19990078166A KR19990078166A (ko) 1999-10-25
KR100605436B1 true KR100605436B1 (ko) 2006-07-28

Family

ID=13545876

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990009916A Expired - Lifetime KR100605436B1 (ko) 1998-03-23 1999-03-23 고체 촬상 장치

Country Status (4)

Country Link
US (1) US6326655B1 (enExample)
JP (1) JPH11274462A (enExample)
KR (1) KR100605436B1 (enExample)
GB (1) GB2335793B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
US6727521B2 (en) * 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
JP3688980B2 (ja) * 2000-06-28 2005-08-31 株式会社東芝 Ｍｏｓ型固体撮像装置及びその製造方法
US6949445B2 (en) * 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
JP2004303982A (ja) * 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 固体撮像素子
US7391066B2 (en) * 2003-04-25 2008-06-24 Micron Technology, Inc. Imager floating diffusion region and process for forming same
KR100523672B1 (ko) * 2003-04-30 2005-10-24 매그나칩 반도체 유한회사 다중 플로팅디퓨젼영역을 구비하는 씨모스 이미지센서
JP4578792B2 (ja) * 2003-09-26 2010-11-10 富士通セミコンダクター株式会社 固体撮像装置
JP4703163B2 (ja) 2004-10-19 2011-06-15 株式会社東芝 固体撮像装置
JP5361110B2 (ja) * 2004-10-20 2013-12-04 三星電子株式会社 非平面トランジスタを有する固体イメージセンサ素子及びその製造方法
JP4660228B2 (ja) * 2005-03-09 2011-03-30 株式会社東芝 固体撮像装置
CN102473714B (zh) * 2009-07-10 2016-06-22 株式会社岛津制作所 固体摄像元件
JP5246218B2 (ja) * 2010-07-26 2013-07-24 富士通セミコンダクター株式会社 固体撮像装置の製造方法
JP2011142344A (ja) * 2011-04-04 2011-07-21 Sony Corp 固体撮像装置
US20150021668A1 (en) * 2013-07-19 2015-01-22 Stmicroelectronics Sa Photosensitive cell of an image sensor
JP2014135515A (ja) * 2014-04-08 2014-07-24 Sony Corp 固体撮像装置
JP2017054947A (ja) * 2015-09-10 2017-03-16 セイコーエプソン株式会社 固体撮像素子及びその製造方法、並びに、電子機器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890015584A (ko) * 1988-03-31 1989-10-30 미다 가쓰시게 증폭형 고체촬상장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1595253A (en) * 1977-01-24 1981-08-12 Hitachi Ltd Solid-state imaging devices
JPS5815280A (ja) * 1981-07-21 1983-01-28 Nec Corp 固体撮像素子
JPS59198756A (ja) * 1983-04-27 1984-11-10 Hitachi Ltd 固体撮像素子およびその製造方法
JPH0230183A (ja) * 1988-07-19 1990-01-31 Nec Corp 固体撮像素子
JP3070146B2 (ja) * 1991-06-19 2000-07-24 ソニー株式会社 固体撮像装置
DE69228838T2 (de) * 1991-07-12 1999-10-21 Sony Corp., Tokio/Tokyo Verfahren zur Steuerung einer Ladungstransferschaltung
JP2832136B2 (ja) * 1992-12-28 1998-12-02 シャープ株式会社 固体撮像装置及びその製造方法
KR950002084A (ko) * 1993-06-22 1995-01-04 오가 노리오 전하전송장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890015584A (ko) * 1988-03-31 1989-10-30 미다 가쓰시게 증폭형 고체촬상장치

Also Published As

Publication number Publication date
GB9906454D0 (en) 1999-05-12
KR19990078166A (ko) 1999-10-25
JPH11274462A (ja) 1999-10-08
GB2335793A (en) 1999-09-29
GB2335793B (en) 2003-03-05
US6326655B1 (en) 2001-12-04

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