GB2335793B - Solid state imaging device - Google Patents

Solid state imaging device

Info

Publication number
GB2335793B
GB2335793B GB9906454A GB9906454A GB2335793B GB 2335793 B GB2335793 B GB 2335793B GB 9906454 A GB9906454 A GB 9906454A GB 9906454 A GB9906454 A GB 9906454A GB 2335793 B GB2335793 B GB 2335793B
Authority
GB
United Kingdom
Prior art keywords
imaging device
solid state
state imaging
solid
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9906454A
Other languages
English (en)
Other versions
GB9906454D0 (en
GB2335793A (en
Inventor
Ryoji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB9906454D0 publication Critical patent/GB9906454D0/en
Publication of GB2335793A publication Critical patent/GB2335793A/en
Application granted granted Critical
Publication of GB2335793B publication Critical patent/GB2335793B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033Photosensitive area
GB9906454A 1998-03-23 1999-03-19 Solid state imaging device Expired - Lifetime GB2335793B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10074392A JPH11274462A (ja) 1998-03-23 1998-03-23 固体撮像装置

Publications (3)

Publication Number Publication Date
GB9906454D0 GB9906454D0 (en) 1999-05-12
GB2335793A GB2335793A (en) 1999-09-29
GB2335793B true GB2335793B (en) 2003-03-05

Family

ID=13545876

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9906454A Expired - Lifetime GB2335793B (en) 1998-03-23 1999-03-19 Solid state imaging device

Country Status (4)

Country Link
US (1) US6326655B1 (enExample)
JP (1) JPH11274462A (enExample)
KR (1) KR100605436B1 (enExample)
GB (1) GB2335793B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
US6727521B2 (en) * 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
JP3688980B2 (ja) * 2000-06-28 2005-08-31 株式会社東芝 Mos型固体撮像装置及びその製造方法
US6949445B2 (en) * 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
JP2004303982A (ja) * 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 固体撮像素子
US7391066B2 (en) * 2003-04-25 2008-06-24 Micron Technology, Inc. Imager floating diffusion region and process for forming same
KR100523672B1 (ko) * 2003-04-30 2005-10-24 매그나칩 반도체 유한회사 다중 플로팅디퓨젼영역을 구비하는 씨모스 이미지센서
JP4578792B2 (ja) * 2003-09-26 2010-11-10 富士通セミコンダクター株式会社 固体撮像装置
JP4703163B2 (ja) 2004-10-19 2011-06-15 株式会社東芝 固体撮像装置
JP5361110B2 (ja) * 2004-10-20 2013-12-04 三星電子株式会社 非平面トランジスタを有する固体イメージセンサ素子及びその製造方法
JP4660228B2 (ja) * 2005-03-09 2011-03-30 株式会社東芝 固体撮像装置
CN102473714B (zh) * 2009-07-10 2016-06-22 株式会社岛津制作所 固体摄像元件
JP5246218B2 (ja) * 2010-07-26 2013-07-24 富士通セミコンダクター株式会社 固体撮像装置の製造方法
JP2011142344A (ja) * 2011-04-04 2011-07-21 Sony Corp 固体撮像装置
US20150021668A1 (en) * 2013-07-19 2015-01-22 Stmicroelectronics Sa Photosensitive cell of an image sensor
JP2014135515A (ja) * 2014-04-08 2014-07-24 Sony Corp 固体撮像装置
JP2017054947A (ja) * 2015-09-10 2017-03-16 セイコーエプソン株式会社 固体撮像素子及びその製造方法、並びに、電子機器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4148048A (en) * 1977-01-24 1979-04-03 Hitachi, Ltd. Solid-state imaging device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815280A (ja) * 1981-07-21 1983-01-28 Nec Corp 固体撮像素子
JPS59198756A (ja) * 1983-04-27 1984-11-10 Hitachi Ltd 固体撮像素子およびその製造方法
US5144447A (en) * 1988-03-31 1992-09-01 Hitachi, Ltd. Solid-state image array with simultaneously activated line drivers
JPH0230183A (ja) * 1988-07-19 1990-01-31 Nec Corp 固体撮像素子
JP3070146B2 (ja) * 1991-06-19 2000-07-24 ソニー株式会社 固体撮像装置
DE69228838T2 (de) * 1991-07-12 1999-10-21 Sony Corp., Tokio/Tokyo Verfahren zur Steuerung einer Ladungstransferschaltung
JP2832136B2 (ja) * 1992-12-28 1998-12-02 シャープ株式会社 固体撮像装置及びその製造方法
KR950002084A (ko) * 1993-06-22 1995-01-04 오가 노리오 전하전송장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4148048A (en) * 1977-01-24 1979-04-03 Hitachi, Ltd. Solid-state imaging device

Also Published As

Publication number Publication date
GB9906454D0 (en) 1999-05-12
KR100605436B1 (ko) 2006-07-28
KR19990078166A (ko) 1999-10-25
JPH11274462A (ja) 1999-10-08
GB2335793A (en) 1999-09-29
US6326655B1 (en) 2001-12-04

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 20150424

PE20 Patent expired after termination of 20 years

Expiry date: 20190318