JPH11177048A - 半導体素子およびその製造方法 - Google Patents

半導体素子およびその製造方法

Info

Publication number
JPH11177048A
JPH11177048A JP9338867A JP33886797A JPH11177048A JP H11177048 A JPH11177048 A JP H11177048A JP 9338867 A JP9338867 A JP 9338867A JP 33886797 A JP33886797 A JP 33886797A JP H11177048 A JPH11177048 A JP H11177048A
Authority
JP
Japan
Prior art keywords
film
lower electrode
semiconductor device
dielectric film
high dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9338867A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11177048A5 (cs
Inventor
Koichi Kijiro
耕一 木城
正樹 ▲吉▼丸
Masaki Yoshimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP9338867A priority Critical patent/JPH11177048A/ja
Priority to KR10-1998-0038710A priority patent/KR100408539B1/ko
Publication of JPH11177048A publication Critical patent/JPH11177048A/ja
Publication of JPH11177048A5 publication Critical patent/JPH11177048A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
JP9338867A 1997-12-09 1997-12-09 半導体素子およびその製造方法 Pending JPH11177048A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9338867A JPH11177048A (ja) 1997-12-09 1997-12-09 半導体素子およびその製造方法
KR10-1998-0038710A KR100408539B1 (ko) 1997-12-09 1998-09-18 커패시터를구비한반도체장치및그제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9338867A JPH11177048A (ja) 1997-12-09 1997-12-09 半導体素子およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007034770A Division JP4659772B2 (ja) 2007-02-15 2007-02-15 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPH11177048A true JPH11177048A (ja) 1999-07-02
JPH11177048A5 JPH11177048A5 (cs) 2005-06-09

Family

ID=18322149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9338867A Pending JPH11177048A (ja) 1997-12-09 1997-12-09 半導体素子およびその製造方法

Country Status (2)

Country Link
JP (1) JPH11177048A (cs)
KR (1) KR100408539B1 (cs)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064144A (ja) * 2000-05-22 2002-02-28 Tokyo Electron Ltd タンタル酸化物膜を絶縁膜として有するキャパシタの製造方法
US6602722B2 (en) 1999-12-16 2003-08-05 Nec Corporation Process for fabricating capacitor having dielectric layer with pervskite structure and apparatus for fabricating the same
US6762110B1 (en) 2003-03-25 2004-07-13 Renesas Technology Corp. Method of manufacturing semiconductor device having capacitor
KR100624926B1 (ko) * 1999-08-04 2006-09-19 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100652354B1 (ko) * 1999-09-15 2006-11-30 삼성전자주식회사 하부전극과 콘택 플러그 사이에 낮은 접촉 저항을 갖는 반도체장치의 커패시터 및 그 제조방법
JP2008282918A (ja) * 2007-05-09 2008-11-20 Elpida Memory Inc 半導体記憶装置の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464404B1 (ko) * 2001-07-27 2005-01-03 삼성전자주식회사 반도체 장치의 제조 방법
KR100443362B1 (ko) * 2002-04-26 2004-08-09 주식회사 하이닉스반도체 2단계 열처리를 적용한 반도체 소자의 캐패시터 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299601A (ja) * 1992-02-20 1993-11-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3083407B2 (ja) * 1992-06-18 2000-09-04 松下電子工業株式会社 半導体装置の製造方法
JP3380373B2 (ja) * 1995-06-30 2003-02-24 三菱電機株式会社 半導体記憶装置及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100624926B1 (ko) * 1999-08-04 2006-09-19 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100652354B1 (ko) * 1999-09-15 2006-11-30 삼성전자주식회사 하부전극과 콘택 플러그 사이에 낮은 접촉 저항을 갖는 반도체장치의 커패시터 및 그 제조방법
US6602722B2 (en) 1999-12-16 2003-08-05 Nec Corporation Process for fabricating capacitor having dielectric layer with pervskite structure and apparatus for fabricating the same
JP2002064144A (ja) * 2000-05-22 2002-02-28 Tokyo Electron Ltd タンタル酸化物膜を絶縁膜として有するキャパシタの製造方法
US6762110B1 (en) 2003-03-25 2004-07-13 Renesas Technology Corp. Method of manufacturing semiconductor device having capacitor
JP2008282918A (ja) * 2007-05-09 2008-11-20 Elpida Memory Inc 半導体記憶装置の製造方法

Also Published As

Publication number Publication date
KR100408539B1 (ko) 2004-06-09
KR19990062504A (ko) 1999-07-26

Similar Documents

Publication Publication Date Title
JP5247059B2 (ja) 五酸化タンタル層を用いた集積回路用コンデンサを製造するための方法
EP0720213A2 (en) Capacitor for integrated circuit and its fabrication method
US6200847B1 (en) Method of manufacturing capacitor of semiconductor device
US7335550B2 (en) Methods for forming semiconductor devices including thermal processing
JP4925494B2 (ja) 高誘電率の誘電膜を有する半導体装置のキャパシタ製造方法
JP3142457B2 (ja) 強誘電体薄膜キャパシタの製造方法
JPH11177048A (ja) 半導体素子およびその製造方法
JP2002076293A (ja) キャパシタ及び半導体装置の製造方法
JPH11177048A5 (cs)
JP2000208440A (ja) 半導体素子のキャパシタ―電極用白金膜の形成方法
JP2000503725A (ja) 誘電率εの高い誘電体層または強誘電体層の製造方法
KR100243275B1 (ko) 반도체장치의 커패시터 및 그 제조방법
JP3225913B2 (ja) 半導体装置の製造方法
US6762091B2 (en) Methods for manufacturing semiconductor devices having a metal layer
US6455328B2 (en) Method of manufacture of a capacitor with a dielectric on the basis of strontium-bismuth-tantalum
JP2004146559A (ja) 容量素子の製造方法
JP4659772B2 (ja) 半導体素子の製造方法
JP4261021B2 (ja) 半導体装置及びその製造方法
KR100474589B1 (ko) 캐패시터제조방법
JP2006245612A (ja) 容量素子の製造方法
JP2000228507A (ja) 半導体素子の高誘電体キャパシタ製造方法
JPH08293581A (ja) 強誘電体薄膜キャパシタ
KR20010027082A (ko) 반도체 소자의 캐패시터 제조방법
JP4106513B2 (ja) 半導体素子のキャパシタ製造方法
KR19980050122A (ko) 반도체소자의 캐패시터 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040907

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040907

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20061208

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061219

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070410