JPH11177048A5 - - Google Patents

Info

Publication number
JPH11177048A5
JPH11177048A5 JP1997338867A JP33886797A JPH11177048A5 JP H11177048 A5 JPH11177048 A5 JP H11177048A5 JP 1997338867 A JP1997338867 A JP 1997338867A JP 33886797 A JP33886797 A JP 33886797A JP H11177048 A5 JPH11177048 A5 JP H11177048A5
Authority
JP
Japan
Prior art keywords
film
lower electrode
dielectric film
capacitor
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997338867A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11177048A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9338867A priority Critical patent/JPH11177048A/ja
Priority claimed from JP9338867A external-priority patent/JPH11177048A/ja
Priority to KR10-1998-0038710A priority patent/KR100408539B1/ko
Publication of JPH11177048A publication Critical patent/JPH11177048A/ja
Publication of JPH11177048A5 publication Critical patent/JPH11177048A5/ja
Pending legal-status Critical Current

Links

JP9338867A 1997-12-09 1997-12-09 半導体素子およびその製造方法 Pending JPH11177048A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9338867A JPH11177048A (ja) 1997-12-09 1997-12-09 半導体素子およびその製造方法
KR10-1998-0038710A KR100408539B1 (ko) 1997-12-09 1998-09-18 커패시터를구비한반도체장치및그제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9338867A JPH11177048A (ja) 1997-12-09 1997-12-09 半導体素子およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007034770A Division JP4659772B2 (ja) 2007-02-15 2007-02-15 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPH11177048A JPH11177048A (ja) 1999-07-02
JPH11177048A5 true JPH11177048A5 (cs) 2005-06-09

Family

ID=18322149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9338867A Pending JPH11177048A (ja) 1997-12-09 1997-12-09 半導体素子およびその製造方法

Country Status (2)

Country Link
JP (1) JPH11177048A (cs)
KR (1) KR100408539B1 (cs)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100624926B1 (ko) * 1999-08-04 2006-09-19 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100652354B1 (ko) * 1999-09-15 2006-11-30 삼성전자주식회사 하부전극과 콘택 플러그 사이에 낮은 접촉 저항을 갖는 반도체장치의 커패시터 및 그 제조방법
JP3317295B2 (ja) 1999-12-16 2002-08-26 日本電気株式会社 容量素子の製造方法
JP2002064144A (ja) * 2000-05-22 2002-02-28 Tokyo Electron Ltd タンタル酸化物膜を絶縁膜として有するキャパシタの製造方法
KR100464404B1 (ko) * 2001-07-27 2005-01-03 삼성전자주식회사 반도체 장치의 제조 방법
KR100443362B1 (ko) * 2002-04-26 2004-08-09 주식회사 하이닉스반도체 2단계 열처리를 적용한 반도체 소자의 캐패시터 제조방법
JP2004289046A (ja) 2003-03-25 2004-10-14 Renesas Technology Corp キャパシタを有する半導体装置の製造方法
JP5627166B2 (ja) * 2007-05-09 2014-11-19 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299601A (ja) * 1992-02-20 1993-11-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3083407B2 (ja) * 1992-06-18 2000-09-04 松下電子工業株式会社 半導体装置の製造方法
JP3380373B2 (ja) * 1995-06-30 2003-02-24 三菱電機株式会社 半導体記憶装置及びその製造方法

Similar Documents

Publication Publication Date Title
EP0720213A2 (en) Capacitor for integrated circuit and its fabrication method
US8987863B2 (en) Electrical components for microelectronic devices and methods of forming the same
JP2000022111A (ja) 高温酸化を用いた半導体素子のキャパシタ形成方法
US7335550B2 (en) Methods for forming semiconductor devices including thermal processing
JPH11177048A5 (cs)
JP2002076293A (ja) キャパシタ及び半導体装置の製造方法
JPH11177048A (ja) 半導体素子およびその製造方法
JP2001237402A (ja) 構造化された金属酸化物含有層および半導体構造素子の製造方法
JP2000503725A (ja) 誘電率εの高い誘電体層または強誘電体層の製造方法
KR100243275B1 (ko) 반도체장치의 커패시터 및 그 제조방법
US6455328B2 (en) Method of manufacture of a capacitor with a dielectric on the basis of strontium-bismuth-tantalum
US6762091B2 (en) Methods for manufacturing semiconductor devices having a metal layer
JPH1154703A (ja) 高誘電体キャパシタの製造方法
JP3225913B2 (ja) 半導体装置の製造方法
KR100474589B1 (ko) 캐패시터제조방법
JP2004146559A (ja) 容量素子の製造方法
JP2002057223A (ja) 半導体素子のキャパシタ及びその製造方法
JP4659772B2 (ja) 半導体素子の製造方法
JP2006245612A (ja) 容量素子の製造方法
JP2001036027A (ja) 半導体装置及びその製造方法
KR100475077B1 (ko) 캐패시터의 유전막 형성방법
KR100771543B1 (ko) 반도체 소자의 캐패시터 형성방법
KR20040060416A (ko) 반도체소자의 캐패시터 제조방법
KR20040003127A (ko) 캡핑층을 갖는 ｍｉｍ 캐패시터 및 그의 제조방법
KR20040060083A (ko) 금속 산화물 하부전극을 구비하는 반도체 소자의 캐패시터형성방법